US4451838A
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Semiconductor photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1980-12-29
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Granted: 1984-05-29
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Expires: 2000-12-29
Abstract
Abstract A semiconductor photoelectric conversion device in which first and second semiconductor layers are formed on a supporting member and P type and N type semiconductor regions are formed in the second semiconductor layer in a manner to extend into contact with the first semiconductor layer, providing a PIN structure. A semiconductor photoelectric conversion device in which first and second semiconductor layers are formed on a supporting member with an insulating or semi-insulating layer, as a barrier, interposed therebetween, and P type and N type semiconductor regions are formed in the second semiconductor layer in a manner to extend into contact with the insulating or semi-insulating layer. Accordingly, there are formed a first MIS structure by the P type semiconductor region, the insulating or semi-insulating layer and the first semiconductor layer and a second MIS structure by the N type semiconductor region, the insulating or semi-insulating layer and the first semiconductor layer.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:55
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F10/00; H10F10/10; H10F10/12; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
115 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed on the supporting member; a second semiconductor layer formed on the first semiconductor layer; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes formed over the second semiconductor layer and contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the second semiconductor layer has a larger energy gap than the first semiconductor layer, and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the first semiconductor layer.
Claim 2
Dependent Claim
115 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed on the supporting member; a second semiconductor layer formed on the first semiconductor layer; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes formed over the second semiconductor layer and contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the second semiconductor layer has a larger energy gap than the first semiconductor layer, and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the first semiconductor layer.
Claim 3
Dependent Claim
47 words
A semiconductor photoelectric conversion device according to claim 1, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second semiconductor layer is an amorphous or semi-amorphous silicon nitride, oxide or carbide.
Claim 4
Dependent Claim
18 words
A semiconductor photoelectric conversion device according to claim 2, wherein the second semiconductor layer is doped with hydrogen.
Claim 5
Dependent Claim
130 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed over the supporting member; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed between the supporting member and the first semiconductor layer; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first, second and third semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the third semiconductor layer has a larger energy gap than the first semiconductor layer; wherein the P type and N type semiconductor regions are spaced apart and are in contact with the first semiconductor layer; and wherein the supporting member is light transparent.
Claim 6
Dependent Claim
130 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed over the supporting member; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed between the supporting member and the first semiconductor layer; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first, second and third semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the third semiconductor layer has a larger energy gap than the first semiconductor layer; wherein the P type and N type semiconductor regions are spaced apart and are in contact with the first semiconductor layer; and wherein the supporting member is light transparent.
Claim 7
Dependent Claim
49 words
A semiconductor photoelectric conversion device according to claim 4, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second and third semiconductor layers is an amorphous or semi-amorphous silicon nitride, oxide or carbide.
Claim 8
Dependent Claim
20 words
A semiconductor photoelectric conversion device according to claim 5, wherein the second and third semiconductor layers are doped with hydrogen.
Claim 9
Dependent Claim
108 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed on the supporting member; a second semiconductor layer formed on the first semiconductor layer; P type and N type semiconductor regions formed in the first semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the first semiconductor layer has a larger energy gap than the second semiconductor layer, and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the second semiconductor layer.
Claim 10
Dependent Claim
108 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed on the supporting member; a second semiconductor layer formed on the first semiconductor layer; P type and N type semiconductor regions formed in the first semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the first semiconductor layer has a larger energy gap than the second semiconductor layer, and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the second semiconductor layer.
Claim 11
Dependent Claim
125 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed over the supporting member; a second semiconductor layer formed on the first semiconductor layer; an insulating or semi-insulating layer formed, as a barrier, between the first and second semiconductor layers; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the second semiconductor layer has a larger energy gap than the first semiconductor layer; and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the insulating or semi-insulating layer.
Claim 12
Dependent Claim
125 words
A semiconductor photoelectric conversion device comprising: a supporting member; a first semiconductor layer formed over the supporting member; a second semiconductor layer formed on the first semiconductor layer; an insulating or semi-insulating layer formed, as a barrier, between the first and second semiconductor layers; P type and N type semiconductor regions formed in the second semiconductor layer; and first and second electrodes contacting P type and N type semiconductor regions; wherein the first and second semiconductor layers are formed of amorphous or semi-amorphous semiconductor and are intrinsic; wherein the second semiconductor layer has a larger energy gap than the first semiconductor layer; and wherein the P type and N type semiconductor regions are spaced apart and are in contact with the insulating or semi-insulating layer.
Claim 13
Dependent Claim
47 words
A semiconductor photoelectric conversion device according to claim 8, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second semiconductor layer is an amorphous or semi-amorphous silicon nitride, oxide or carbide.
Claim 14
Dependent Claim
18 words
A semiconductor photoelectric conversion device according to claim 9, wherein the second semiconductor layer is doped with hydrogen.
References Cited (Backward Citations)
US4133698A
Cited
US4239554A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-29 | 1987-11-28 | 1988-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-29 | 1991-11-28 | 1992-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-29 | 1995-11-28 | 1996-05-29 | $7700.00 | Window Closed / Lapsed |