Semiconductor substrate manufacturing by recrystallization using a cooling medium

Claim 1

A method of manufacturing a semiconductor substrate, comprising the steps of: depositing an amorphous semiconductor film or a polycrystalline semiconductor film on a foundation covered at least partly with a high-melting-point metal film or a high-melting-point metal alloy film; disposing a transparent cooling medium on said semiconductor film; melting said semiconductor film by irradiating said semiconductor film with energy through said transparent cooling medium to improve the uniformity of the distribution of heat in said semiconductor film irradiated with energy; and growing a single-crystal region in said semiconductor film irradiated with said energy.

Claim 2

A method of manufacturing a semiconductor substrate, comprising the steps of: depositing an amorphous semiconductor film or a polycrystalline semiconductor film on a foundation covered at least partly with a high-melting-point metal film or a high-melting-point metal alloy film; disposing a transparent cooling medium on said semiconductor film; melting said semiconductor film by irradiating said semiconductor film with energy through said transparent cooling medium to improve the uniformity of the distribution of heat in said semiconductor film irradiated with energy; and growing a single-crystal region in said semiconductor film irradiated with said energy.

Claim 8

A method of manufacturing a solid state structure, comprising: providing a foundation of an electrically isolating material having an upper surface covered at least partly with a metal film; forming a polycrystalline semiconductor film or an amorphous semiconductor film over said foundation and over said metal film, the melting point of said metal film being higher than that of said semiconductor film; irradiating said semiconductor film with radiant energy which passes through said semiconductor film and reaches said metal film to monocrystallize said semiconductor film; forming grooves dividing said metal film into laterally spaced patches and dividing said monocrystallized semiconductor film at least into islands which are over the respective ones of said patches of said metal film, said grooves eclectically isolating said islands from each other in a lateral direction, and forming respective active devices at said islands and making electrical contact to selected portions of said active devices by making eclectrically conductive interior portions of said grooves which contact respective ones of said patches of said metal film.

Claim 9

A method of manufacturing a solid state structure, comprising: providing a foundation of an electrically isolating material having an upper surface covered at least partly with a metal film; forming a polycrystalline semiconductor film or an amorphous semiconductor film over said foundation and over said metal film, the melting point of said metal film being higher than that of said semiconductor film; irradiating said semiconductor film with radiant energy which passes through said semiconductor film and reaches said metal film to monocrystallize said semiconductor film; forming grooves dividing said metal film into laterally spaced patches and dividing said monocrystallized semiconductor film at least into islands which are over the respective ones of said patches of said metal film, said grooves eclectically isolating said islands from each other in a lateral direction, and forming respective active devices at said islands and making electrical contact to selected portions of said active devices by making eclectrically conductive interior portions of said grooves which contact respective ones of said patches of said metal film.

Claim 11

A method of manufacturing a solid state structure, comprising the steps of: providing a foundation of an electrically isolating material having an upper surface covered with a first metal film, and providing a second metal film over said first metal film, said second metal film being in the form of laterally spaced patches which are eclectically isolated from said first metal film by laterally spaced portions of an electrically insulating film, said insulating film being disposed between said first metal film and said second metal film; forming a polycrystalline semiconductor film or an amorphous semiconductor film over said foundation and over said second metal film, the melting point of said first metal film being higher than that of said semiconductor film; and irradiating said semiconductor film with radiant energy which passes through said semiconductor film and reaches said first metal film to monocrystallize said semiconductor film.

Claim 12

A method of manufacturing a solid state structure, comprising the steps of: providing a foundation of an electrically isolating material having an upper surface covered with a first metal film, and providing a second metal film over said first metal film, said second metal film being in the form of laterally spaced patches which are eclectically isolated from said first metal film by laterally spaced portions of an electrically insulating film, said insulating film being disposed between said first metal film and said second metal film; forming a polycrystalline semiconductor film or an amorphous semiconductor film over said foundation and over said second metal film, the melting point of said first metal film being higher than that of said semiconductor film; and irradiating said semiconductor film with radiant energy which passes through said semiconductor film and reaches said first metal film to monocrystallize said semiconductor film.