EP0057135A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Low resistance Schottky diode on polysilicon/metal-silicide
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-01-21
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Granted: —
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Expires: 2002-01-21
Abstract
Abstract A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.
Inventors
- 👤 Madhukar B. Vora
- 👤 Hemraj K. Hingarh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 12:14
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D62/00; H10D62/40; H10D8/60; H10D84/00; H10D84/01; H10D86/00; H10D86/01
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
84 words
A method for fabricating a Schottky diode, characterized by: (a) forming a layer of metal-silicide on an underlying layer,of dielectric; (b) forming a layer of polysilicon on the upper surface of said metal-silicide layer; (c) forming a second dielectric layer on the upper surface of said polysilicon layer and patterning said second dielectric layer to create a contact window through said second dielectric layer to an exposed surface region of said polysilicon layer; and (d) forming a metal contact to said exposed surface region.
Claim 2
Independent Claim
84 words
A method for fabricating a Schottky diode, characterized by: (a) forming a layer of metal-silicide on an underlying layer,of dielectric; (b) forming a layer of polysilicon on the upper surface of said metal-silicide layer; (c) forming a second dielectric layer on the upper surface of said polysilicon layer and patterning said second dielectric layer to create a contact window through said second dielectric layer to an exposed surface region of said polysilicon layer; and (d) forming a metal contact to said exposed surface region.
Claim 3
Dependent Claim
13 words
A method according to claim 1 characterized in that said metal-silicide is tantalum-silicide.
Claim 4
Dependent Claim
16 words
A method according to claim 1 or 2 characterized in that said dielectric is silicon dioxide.
Claim 5
Dependent Claim
17 words
A method according to claim 1, 2 or 3 characterized in that said polvsilicon is N-type polysilicon.
Claim 6
Dependent Claim
128 words
A method according to claim 1, 2, or 3 for fabricating an integrated Schottky diode structure, characterized by: forming a plurality of contact windows through said second dielectric layer to a corresponding plurality of exposed surface regions of said polysilicon layer; forming a relatively heavily doped region of the same conductivity type as said polysilicon layer in said polysilicon layer beneath one of said exposed surface regions; and in that said step of forming metal contacts produce metal contact to said relatively heavily doped region of said polysilicon layer to form a pick-up for said metal-silicide layer, said metal contacts to said remaining surface regions of said polysilicon layer form anodes of said integrated Schottky diodes and said metal-silicide layer forms a common cathode of said Schottky diodes.
Claim 7
Dependent Claim
37 words
A method according to claim 5 characterized in that said polysilicon layer is doped to provide a lower N+ polysilicon layer which forms an ohmic interface with said metal-silicide layer and a surface layer comprising N- polysilicon.
Claim 8
Dependent Claim
29 words
A method according to claim 6 characterized in that said polysilicon layer is laser annealed such that about the top 3000 Angstroms of said polysilicon layer become single crystal.
Claim 9
Dependent Claim
92 words
A Schottky diode structure, comprising: (a) a layer of metal-silicide formed on an underlying layer of dielectric; (b) a layer of polysilicon formed on the upper surface of metal-silicide layer; (c) a second dielectric layer formed on the upper surface of said polysilicon and patterned such that a contact window extends through said second dielectric layer to a surface region of said polysilicon; and (d) a metal contact to said polysilicon surface region, said contact forming the anode of said Schottky diode structure and said metal-silicide forming the cathode of said structure.
Claim 10
Dependent Claim
92 words
A Schottky diode structure, comprising: (a) a layer of metal-silicide formed on an underlying layer of dielectric; (b) a layer of polysilicon formed on the upper surface of metal-silicide layer; (c) a second dielectric layer formed on the upper surface of said polysilicon and patterned such that a contact window extends through said second dielectric layer to a surface region of said polysilicon; and (d) a metal contact to said polysilicon surface region, said contact forming the anode of said Schottky diode structure and said metal-silicide forming the cathode of said structure.
Claim 11
Dependent Claim
13 words
A structure according to claim 8 characterized in that said metal-silicide is tantalum-silicide.
Claim 12
Dependent Claim
16 words
A structure according to claim 8 or 9 characterized in that said dielectric is silicon dioxide.
Claim 13
Dependent Claim
17 words
A structure according to claim 8, 9, or 10 characterized in that said polysilicon is N-type polysilicon.
Claim 14
Dependent Claim
129 words
A structure according to claim 8, 9 or 10 for an integrated Schottky diode characterized in that a plurality of said contact windows being formed through said second dielectric layer to a corresponding plurality of surface regions of said polysilicon layer; a relatively heavily doped region of the same conductivity type as said polysilicon layer being formed in said polysilicon layer beneath one of said surface regions; and a plurality of said metal contacts to said exposed surface regions, said metal contact to said relatively heavily doped region of said polysilicon layer forming a pick-up for said metal-silicide layer, said metal contacts to said remaining surface regions of said polysilicon layer forming anodes of said integrated diode structure and said metal-silicide layer forming a common cathode of said structure.
Claim 15
Dependent Claim
38 words
A structure acccordin g to claim 12 characterized in that said polysilicon layer is doped to provide a lower N+ polysilicon layer which forms an ohmic interface with said metal-silicide layer and a surface layer comprising N- polysilicon.
Claim 16
Dependent Claim
32 words
A structure according to claim 12 or 13 characterized in that said polysilicon layer has been laser annealed such that about the top 3000 Angstroms of said polysilicon layer is single crystal.
References Cited (Backward Citations)
No citation records indexed.
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