US4544418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for high temperature surface reactions in semiconductor material
Assignee: G-SQUARED SEMICONDUCTOR Corp
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Filing: 1984-04-16
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Granted: 1985-10-01
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Expires: 2004-04-16
Abstract
Abstract A process for controlled surface reactions in semiconductor material which includes rapidly heating the material to a high temperature, maintaining the temperature for a short time and cooling the material all while the surface is exposed to a substance which reacts at the surface.
Inventors
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P34/00; H10P34/40; H10P34/42; H10P34/422
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
97 words
A process for forming on a substrate one or more very thin films, and for controlling the uniformity of the thickness of said very thin films in a predetermined atmosphere having selected reactants comprising the steps of: rapidly heating a substrate and linearly raising the temperature of said atmosphere at a first rate to a predetermined temperature; maintaining said atmosphere at said elevated temperature for a selected time measured in seconds; and cooling said substrate in the presence of selected reactants to provide a linear decrease of temperature at a second rate to a relatively low temperature.
Claim 2
Dependent Claim
97 words
A process for forming on a substrate one or more very thin films, and for controlling the uniformity of the thickness of said very thin films in a predetermined atmosphere having selected reactants comprising the steps of: rapidly heating a substrate and linearly raising the temperature of said atmosphere at a first rate to a predetermined temperature; maintaining said atmosphere at said elevated temperature for a selected time measured in seconds; and cooling said substrate in the presence of selected reactants to provide a linear decrease of temperature at a second rate to a relatively low temperature.
Claim 3
Dependent Claim
25 words
The process of claim 1 in which the atmosphere is an oxidizing atmosphere whereby to form an oxide at the surface of the semiconductor material.
Claim 4
Dependent Claim
14 words
A process as in claim 1 wherein said substrate is heated by pulsed radiation.
Claim 5
Dependent Claim
30 words
A process as in claim 1 wherein said predetermined temperature is in the range of about 1,000° C. to 1,200° C. and said relatively low temperature is about 400° C.
Claim 6
Dependent Claim
16 words
A process as in claim 1 wherein said predetermined temperature is maintained for about five seconds.
Claim 7
Dependent Claim
30 words
A process as in claim 1 wherein said selected reactants are introduced into the same atmosphere or environment as that used for raising and lowering the temperature of said wafer.
Claim 8
Dependent Claim
20 words
A process as in claim 1 wherein said very thin films each have a thickness less than about 500 Å.
Claim 9
Dependent Claim
14 words
A process as in claim 1 wherein said selected reactants are phosphine and nitrogen.
Claim 10
Dependent Claim
20 words
A process as in claim 1 wherein an epitaxial layer of silicon is grown to form a very thin film.
Claim 11
Dependent Claim
14 words
The process of claim 9 where the selected reactants are N 2 and HCl.
Claim 12
Dependent Claim
20 words
The process of claim 1 in which the atmosphere contains atoms of the semiconductor material whereby there is epitaxial growth.
Claim 13
Dependent Claim
24 words
The process of claim 2 in which the oxidizing atmosphere includes impurities whereby there is simultaneous diffusion of the impurities and formation of oxide.
Claim 14
Dependent Claim
17 words
The process of claim 11 wherein the semiconductor material is silicon and the atoms are silicon atoms.
Claim 15
Dependent Claim
15 words
The process of claim 13 in which the silicon atoms are in SiCl 4 .
Claim 16
Dependent Claim
15 words
The process of claim 13 in which the silicon atoms are in SiH 4 .
Claim 17
Dependent Claim
21 words
A process as in claim 9 wherein said selected reactants are nitrogen and HCl, and SiCl4 and hydrogen, or pure SiH4.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |