Controlling the properties of native films using selective growth chemistry

Claim 1

A method of growing a native film on a compound semiconductor comprising exposing a compound semiconductor to at least one first reactant which reacts preferentially with at least one of the compound semiconductor constituents to grow a native film, the invention CHARACTERIZED IN THAT the compound semiconductor is additionally exposed to at least one second reactant, which reacts preferentially with at least one compound semiconductor constituent which does not react preferentially with the first reactant, and in that the reactants are introduced into a plasma which comprises a reaction causing environment, thereby yielding a film with improved stoichiometry.

Claim 2

A method of growing a native film on a compound semiconductor comprising exposing a compound semiconductor to at least one first reactant which reacts preferentially with at least one of the compound semiconductor constituents to grow a native film, the invention CHARACTERIZED IN THAT the compound semiconductor is additionally exposed to at least one second reactant, which reacts preferentially with at least one compound semiconductor constituent which does not react preferentially with the first reactant, and in that the reactants are introduced into a plasma which comprises a reaction causing environment, thereby yielding a film with improved stoichiometry.

Claim 13

A method of growing a native film comprising forming an oxygen plasma at a background pressure of less than 9×10 -3 torr using a pair of RF electrodes; driving the electrodes in approximate balance at the same dc potential, at a power of between 1 and 500 watts and at a frequency of between 20 and 30 mHz; confining the plasma using an external magnetic field of between 1 and 500 gauss; directing magnetically the plasma to a semiconductor substrate; orienting the semiconductor substrate approximately normal to the magnetic field lines; biasing the semiconductor substrate positive with respect to the plasma; the invention characterized in that fluorine is added to the oxygen plasma, whereby a native oxide film is grown.

Claim 14

A method of growing a native film comprising forming an oxygen plasma at a background pressure of less than 9×10 -3 torr using a pair of RF electrodes; driving the electrodes in approximate balance at the same dc potential, at a power of between 1 and 500 watts and at a frequency of between 20 and 30 mHz; confining the plasma using an external magnetic field of between 1 and 500 gauss; directing magnetically the plasma to a semiconductor substrate; orienting the semiconductor substrate approximately normal to the magnetic field lines; biasing the semiconductor substrate positive with respect to the plasma; the invention characterized in that fluorine is added to the oxygen plasma, whereby a native oxide film is grown.

Claim 17

A method of growing a native oxide layer comprising placing a semiconductor substrate in an oxygen environment comprising oxygen at a pressure of less than 9×10 -3 torr; directing a beam comprising electrons of density of between 10 8 electrons/cc and 10 12 electrons/cc toward the substrate; and biasing the substrate between 0.2 and 500 voltspositive with respect to the source of the electrons, the invention characterized in that fluorine is added to the oxygen environment, whereby a native oxide layer is grown.

Claim 18

A method of growing a native oxide layer comprising placing a semiconductor substrate in an oxygen environment comprising oxygen at a pressure of less than 9×10 -3 torr; directing a beam comprising electrons of density of between 10 8 electrons/cc and 10 12 electrons/cc toward the substrate; and biasing the substrate between 0.2 and 500 voltspositive with respect to the source of the electrons, the invention characterized in that fluorine is added to the oxygen environment, whereby a native oxide layer is grown.