US3297500A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of passivating semiconductor devices
Assignee: International Standard Electric Corp
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Filing: 1964-02-07
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Granted: 1967-01-10
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Expires: 1984-02-07
Abstract
No abstract record available.
Inventors
- 👤 Drake Cyril Francis
- 👤 Ellington Kenneth Leopold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:17
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/44; C23C16/50; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6326; H10P14/6328; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
37 words
A METHOD OF PASSIVATING A SILICON SEMICONDUCTOR DEVICE WHICH INCLUDES THE STEP OF HEATING THE SAID DEVICE IN AN OXIDISING ATMOSPHERE IN THE PRESENCE OF A SUBSTANCE SELECTED FROM THE GROUPING CONSISTING OF VANADIUM AND ITS COMPOUNDS.
Claim 2
Independent Claim
37 words
A METHOD OF PASSIVATING A SILICON SEMICONDUCTOR DEVICE WHICH INCLUDES THE STEP OF HEATING THE SAID DEVICE IN AN OXIDISING ATMOSPHERE IN THE PRESENCE OF A SUBSTANCE SELECTED FROM THE GROUPING CONSISTING OF VANADIUM AND ITS COMPOUNDS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-01-09 | 1970-07-11 | 1971-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-01-09 | 1974-07-11 | 1975-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-01-09 | 1978-07-11 | 1979-01-10 | $7700.00 | Window Closed / Lapsed |