US3287243A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition of insulating films by cathode sputtering in an rf-supported discharge
Assignee: AT&T Inc
•
Filing: 1965-03-29
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Granted: 1966-11-22
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Expires: 1985-03-29
Abstract
No abstract record available.
Inventors
- 👤 Joseph R Ligenza
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/22; C23C14/24; C23C14/28; C23C14/30; G; G05; G05F; G05F1/00; G05F1/10; G05F1/12; G05F1/32; G05F1/34; G05F1/38; H01; H01B; H01B3/00; H01B3/02; H01B3/10; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/34; H10W; H10W72/00; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S148/118; Y10S148/148; Y10S148/158
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
158 words
A METHOD FOR DEPOSITINNG AN INSULATING FILM ON A SOLID SUBSTRATE WHICH COMPRISES THE STEPS OF CONTACTING AN ANODE SUBSTRATE AND A CATHODE BODY COMPOSED OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON, BERYLLIUM AND ALUMINNUM, SAID ANODE AND CATHODE SPACED AT A DISTANCE OF 0.5 CM. TO 5 CM. WITH A MODERATE DENSITY GAS PLASMA, SAID PLASMA CHARACTERIZED BY A GAS PRESSURE OF 0.1 MM. TO 10MM. SAID GAS SELECTED FROM THE GROUP CONSISTING OF OXYGEN, NITROGENN AND METHANE, AND FURTHER CHARACTERIZED BY A POSITIVE IONN SATURATION CURRENT DENSITY IN THE RANGE 0.1 TO 100 ,A./CM.2, IMPRESSING A D.C. VOLTAGE OF AT LEAST 125 VOLTS BETWEEN SAID ANNODE AND CATHODE AND APPLYING AN RF SIGNAL WITH A FREQUENCY IN EXCESS OF 50 KC. AND A VOLTAGE IN EXCESS OF SAID D.C. VOLTAGE TO THE INTERFACE BETWEEN THE CATHODE AND THE PLASMA SO AS TO PERMIT CONTINUED UNIFORM DEPOSITION OF THE INSULATING FILM ON THE SUBSTRATE.
Claim 2
Independent Claim
158 words
A METHOD FOR DEPOSITINNG AN INSULATING FILM ON A SOLID SUBSTRATE WHICH COMPRISES THE STEPS OF CONTACTING AN ANODE SUBSTRATE AND A CATHODE BODY COMPOSED OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON, BERYLLIUM AND ALUMINNUM, SAID ANODE AND CATHODE SPACED AT A DISTANCE OF 0.5 CM. TO 5 CM. WITH A MODERATE DENSITY GAS PLASMA, SAID PLASMA CHARACTERIZED BY A GAS PRESSURE OF 0.1 MM. TO 10MM. SAID GAS SELECTED FROM THE GROUP CONSISTING OF OXYGEN, NITROGENN AND METHANE, AND FURTHER CHARACTERIZED BY A POSITIVE IONN SATURATION CURRENT DENSITY IN THE RANGE 0.1 TO 100 ,A./CM.2, IMPRESSING A D.C. VOLTAGE OF AT LEAST 125 VOLTS BETWEEN SAID ANNODE AND CATHODE AND APPLYING AN RF SIGNAL WITH A FREQUENCY IN EXCESS OF 50 KC. AND A VOLTAGE IN EXCESS OF SAID D.C. VOLTAGE TO THE INTERFACE BETWEEN THE CATHODE AND THE PLASMA SO AS TO PERMIT CONTINUED UNIFORM DEPOSITION OF THE INSULATING FILM ON THE SUBSTRATE.
References Cited (Backward Citations)
US3108900A
Cited
US3021271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-11-21 | 1970-05-23 | 1970-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-11-21 | 1974-05-23 | 1974-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-11-21 | 1978-05-23 | 1978-11-22 | $7700.00 | Window Closed / Lapsed |