US4277320A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for direct thermal nitridation of silicon semiconductor devices
Assignee: Boeing North American Inc
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Filing: 1979-10-01
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Granted: 1981-07-07
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Expires: 1999-10-01
Abstract
Abstract A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N 2 , at a temperature of less than 1000° C. The N 2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.
Inventors
- 👤 Moiz M. E. Beguwala
- 👤 Francis M. Erdmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; H10P14/65; H10P14/6502; H10P14/6512; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
108 words
A method of forming a high purity silicon nitride layer on a major surface of a silicon semiconductor body comprising the steps of: removing the native oxide from the surface of the silicon semiconductor body by subjecting the body to a hydrogen atmosphere; subjecting said silicon semiconductor body to an atmosphere entirely comprising substantially pure N 2 ; ionizing said atmosphere for a predetermined period of time so that the nitrogen is ionized; chemically reacting the nitrogen ions with silicon on the surface of said silicon semiconductor body so that the nitrogen ions and the silicon combine to form a layer of silicon nitride on the body; and
Claim 2
Independent Claim
108 words
A method of forming a high purity silicon nitride layer on a major surface of a silicon semiconductor body comprising the steps of: removing the native oxide from the surface of the silicon semiconductor body by subjecting the body to a hydrogen atmosphere; subjecting said silicon semiconductor body to an atmosphere entirely comprising substantially pure N 2 ; ionizing said atmosphere for a predetermined period of time so that the nitrogen is ionized; chemically reacting the nitrogen ions with silicon on the surface of said silicon semiconductor body so that the nitrogen ions and the silicon combine to form a layer of silicon nitride on the body; and
Claim 3
Dependent Claim
13 words
A method as defined in claim 1, wherein said step of ionizing said
Claim 4
Dependent Claim
23 words
A method as defined in claim 1, further comprising the step of subsequently annealing said body in an inert gas atmosphere at a
Claim 5
Dependent Claim
13 words
A method as defined in claim 2, wherein said step of ionizing said
Claim 6
Independent Claim
108 words
A method of forming a high purity silicon nitride layer on a major surface of a silicon semiconductor body comprising the steps of: removing the native oxide from the surface of the silicon semiconductor body by subjecting the body to a hydrogen atmosphere; subjecting said silicon semiconductor body to an atmosphere entirely comprising substantially pure NH 3 ; ionizing said atmosphere for a predetermined period of time so that the nitrogen is ionized; chemically reacting the nitrogen ions with silicon on the surface of said silicon semiconductor body so that the nitrogen ions and the silicon combine to form a layer of silicon nitride on the body; and
Claim 7
Independent Claim
108 words
A method of forming a high purity silicon nitride layer on a major surface of a silicon semiconductor body comprising the steps of: removing the native oxide from the surface of the silicon semiconductor body by subjecting the body to a hydrogen atmosphere; subjecting said silicon semiconductor body to an atmosphere entirely comprising substantially pure NH 3 ; ionizing said atmosphere for a predetermined period of time so that the nitrogen is ionized; chemically reacting the nitrogen ions with silicon on the surface of said silicon semiconductor body so that the nitrogen ions and the silicon combine to form a layer of silicon nitride on the body; and
Claim 8
Dependent Claim
13 words
A method as defined in claim 5, wherein said step of ionizing said
Claim 9
Dependent Claim
23 words
A method as defined in claim 5, further comprising the step of subsequently annealing said body in an inert gas atmosphere at a
Claim 10
Dependent Claim
24 words
A method as defined in claim 5, wherein said step of ionizing said atmosphere is done at a temperature of less than 1000° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-06 | 1985-01-05 | 1985-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-06 | 1989-01-05 | 1989-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-06 | 1993-01-05 | 1993-07-07 | $7700.00 | Window Closed / Lapsed |