US4069096A
Expired / Lapsed
US
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Silicon etching process
Assignee: Texas Instruments Inc
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Filing: 1975-11-03
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Granted: 1978-01-17
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Expires: 1995-11-03
Abstract
Abstract In the manufacture of semiconductor devices it is often times necessary to use photomasks. It has been found that silicon material is useful as see-through photomasks when deposited on a thin film of glass. After deposition the silicon is etched to form the mask. A suitable etchant, which may be used and which does not undercut patterned material formed over the silicon, may be derived from a composition of CCl4 + N2 + Cl2 and in some instances + HCl. This etchant may also be used in patterning polysilicon leads on various silicon devices such as charged coupled devices without undercutting of the leads.
Inventors
- 👤 Alan R. Reinberg
- 👤 Raman K. Rao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:39
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/54; G03F1/68; G03F1/80; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/262; H10P50/263; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
39 words
A process for etching silicon comprising the step of: contacting said silicon with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl.
Claim 2
Dependent Claim
39 words
A process for etching silicon comprising the step of: contacting said silicon with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl.
Claim 3
Dependent Claim
22 words
A process as set forth in claim 1 wherein said inert gas is selected from a group consisting of nitrogen and argon.
Claim 4
Dependent Claim
20 words
A process as set forth in claim 2 wherein the plasma consists of CCl 4 +N 2 +Cl 2 .
Claim 5
Dependent Claim
18 words
A process as set forth in claim 2 wherein the plasma consists of CCl 4 +N 2 +HCl.
Claim 6
Dependent Claim
51 words
A process for making a silicon photo-mask comprising the steps of: depositing a layer of silicon on a substrate; and patterning said silicon layer with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl.
Claim 7
Dependent Claim
51 words
A process for making a silicon photo-mask comprising the steps of: depositing a layer of silicon on a substrate; and patterning said silicon layer with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl.
Claim 8
Dependent Claim
22 words
A process as set forth in claim 5 wherein said inert gas is selected from a group consisting of nitrogen and argon.
Claim 9
Dependent Claim
20 words
A process as set forth in claim 6 wherein the plasma consists of CCl 4 +N 2 +Cl 2 .
Claim 10
Dependent Claim
18 words
A process as set forth in claim 6 wherein the plasma consists of CCl 4 +N 2 +HCl.
Claim 11
Dependent Claim
120 words
A process for manufacturing a high density semiconductor device having a plurality of components formed thereon and interconnected by very small silicon interconnecting patterns comprising the steps of: depositing a layer of insulating material over the surface of said semiconductor device; patterning said layer of insulating material to expose contact areas to be interconnected; depositing a layer of silicon on said contact areas and said layer of insulating material; and etching said layer of silicon with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl so as to remove unwanted portions of said layer of silicon to leave the desired silicon interconnection patterns.
Claim 12
Dependent Claim
120 words
A process for manufacturing a high density semiconductor device having a plurality of components formed thereon and interconnected by very small silicon interconnecting patterns comprising the steps of: depositing a layer of insulating material over the surface of said semiconductor device; patterning said layer of insulating material to expose contact areas to be interconnected; depositing a layer of silicon on said contact areas and said layer of insulating material; and etching said layer of silicon with a plasma derived from a gas comprising CCl 4 , an inert gas, and a gas selected from a group consisting of Cl 2 and HCl so as to remove unwanted portions of said layer of silicon to leave the desired silicon interconnection patterns.
Claim 13
Dependent Claim
20 words
A process as set forth in claim 9 wherein the plasma consists of CCl 4 +N 2 +Cl 2 .
Claim 14
Dependent Claim
18 words
A process as set forth in claim 9 wherein the plasma consists of CCl 4 +N 2 +HCl.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-16 | 1981-07-18 | 1982-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-16 | 1985-07-18 | 1986-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-16 | 1989-07-18 | 1990-01-17 | $7700.00 | Window Closed / Lapsed |