US6093937A
Expired / Lapsed
US
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Semiconductor thin film, semiconductor device and manufacturing method thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-02-19
•
Granted: 2000-07-25
•
Expires: 2017-02-19
Abstract
Abstract A semiconductor device includes a substrate having an insulating film on its surface, and an active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of crystallization. Perform a first heat treatment to alter the amorphous silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Jun Koyama
- 👤 Akiharu Miyanaga
- 👤 Takeshi Fukunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H10; H10D; H10D86/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10B; H10B10/00; H10B10/12; H10B10/125; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/30; H10D30/00; H10D30/60; H10D30/67; H10D62/00; H10D62/40; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/0227; H10D86/0251; H10D86/201; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806
Claims Analysis
Total Claims: 111
Claim 1
Independent Claim
57 words
A semiconductor thin film on an insulating film formed on a substrate, said thin film comprising: a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to said substrate; and said insulating film underlying said thin film and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 2
Dependent Claim
57 words
A semiconductor thin film on an insulating film formed on a substrate, said thin film comprising: a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to said substrate; and said insulating film underlying said thin film and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 3
Dependent Claim
20 words
A semiconductor thin film according to claim 1, wherein said mono-domain region substantially avoids inclusion of crystal grain boundaries therein.
Claim 4
Dependent Claim
63 words
A semiconductor thin film on an insulating film formed on a substrate, said semiconductor thin film comprising: a mono-domain region including a plurality of columnar or needlelike crystals being essentially parallel to the surface of said substrate, wherein said mono-domain region has substantially no grain boundary therein; and said insulating film underlying said thin film and having a pattern of projections or depressions.
Claim 5
Dependent Claim
63 words
A semiconductor thin film on an insulating film formed on a substrate, said semiconductor thin film comprising: a mono-domain region including a plurality of columnar or needlelike crystals being essentially parallel to the surface of said substrate, wherein said mono-domain region has substantially no grain boundary therein; and said insulating film underlying said thin film and having a pattern of projections or depressions.
Claim 6
Dependent Claim
90 words
A semiconductor thin film on an insulating film formed on a substrate, said semiconductor thin film comprising: a mono-domain region including a plurality of columnar or needlelike crystals being essentially parallel to the surface of said substrate, wherein said mono-domain region has substantially no grain boundary therein; and said insulating film underlying said thin film and having a pattern of projections or depressions, wherein said mono-domain region contains hydrogen or a halogen at 5 at % or less, said halogen selected from the group consisting of chlorine, bromine and fluorine.
Claim 7
Dependent Claim
90 words
A semiconductor thin film on an insulating film formed on a substrate, said semiconductor thin film comprising: a mono-domain region including a plurality of columnar or needlelike crystals being essentially parallel to the surface of said substrate, wherein said mono-domain region has substantially no grain boundary therein; and said insulating film underlying said thin film and having a pattern of projections or depressions, wherein said mono-domain region contains hydrogen or a halogen at 5 at % or less, said halogen selected from the group consisting of chlorine, bromine and fluorine.
Claim 8
Dependent Claim
23 words
A semiconductor thin film according to claim 4, wherein said halogen has an increased concentration near a surface of said semiconductor thin film.
Claim 9
Dependent Claim
25 words
A semiconductor thin film according to any one of claim 1, 3 or 4, wherein said mono-domain region is 15 to 45 nanometers in thickness.
Claim 10
Dependent Claim
37 words
A semiconductor thin film according to any one of claim 1, 3 or 4, wherein hydrogen is contained in said semiconductor thin film constituting said mono-domain region at 1×10 15 to 1×10 21 atoms per cubic centimeter.
Claim 11
Dependent Claim
76 words
A semiconductor thin film according to any one of claim 1, 3 or 4, wherein said mono-domain region includes a perpendicular crystal growth region on said pattern, and a lateral crystal growth region of crystals as grown in substantially parallel to a silicon film surface with said perpendicular crystal growth region being as a starting material, and wherein said perpendicular crystal growth region is greater in content of metallic element than said lateral crystal growth region.
Claim 12
Dependent Claim
74 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer of a semiconductive thin film on the surface of said substrate; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; and said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 13
Dependent Claim
74 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer of a semiconductive thin film on the surface of said substrate; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; and said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 14
Dependent Claim
18 words
A device according to claim 9, wherein said active layer essentially eliminates inclusion of any crystal grain boundaries.
Claim 15
Dependent Claim
75 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer of a semiconductive thin film on the surface of said substrate; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; and said insulating film underlying said active layer and having a pattern of projections or depressions, wherein said mono-domain region has substantially no grain boundary.
Claim 16
Dependent Claim
75 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer of a semiconductive thin film on the surface of said substrate; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; and said insulating film underlying said active layer and having a pattern of projections or depressions, wherein said mono-domain region has substantially no grain boundary.
Claim 17
Dependent Claim
105 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer formed of a semiconductive thin film on said insulating film; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface while essentially avoiding presence of crystal boundaries; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen and halogen at a predefined concentration less than or equal to five atomic percent, the halogen being selected from the group consisting of chlorine, bromine and fluorine.
Claim 18
Dependent Claim
105 words
A semiconductor device comprising: a substrate having an insulating film on a surface thereof; an active layer formed of a semiconductive thin film on said insulating film; said thin film having a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface while essentially avoiding presence of crystal boundaries; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen and halogen at a predefined concentration less than or equal to five atomic percent, the halogen being selected from the group consisting of chlorine, bromine and fluorine.
Claim 19
Dependent Claim
23 words
A device according to any one of claim 9, 11, or 12, wherein said active layer measures 15 to 45 nanometers in thickness.
Claim 20
Dependent Claim
32 words
A device according to any one of claim 9, 11, or 12, wherein the hydrogen element is contained in said active layer at 1×10 15 to 1×10 21 atoms per cubic centimeter.
Claim 21
Dependent Claim
76 words
A semiconductor device comprising: a silicon substrate; an integrated circuitry on said substrate; an insulating film overlying said circuitry; an active layer of a semiconductive thin film on said insulating film; said semiconductive thin film having a mono-domain region including a plurality of columnar or needle-like crystals substantially parallel to said substrate; and said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 22
Dependent Claim
76 words
A semiconductor device comprising: a silicon substrate; an integrated circuitry on said substrate; an insulating film overlying said circuitry; an active layer of a semiconductive thin film on said insulating film; said semiconductive thin film having a mono-domain region including a plurality of columnar or needle-like crystals substantially parallel to said substrate; and said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed.
Claim 23
Dependent Claim
42 words
A device according to claim 15, wherein said active layer contains therein hydrogen and halogen at a predefined concentration less than or equal to five atomic percent, and wherein the halogen is selected from the group consisting of chlorine, bromine and fluorine.
Claim 24
Dependent Claim
139 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer comprising silicon patterned in a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 25
Dependent Claim
139 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer comprising silicon patterned in a mono-domain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 26
Dependent Claim
15 words
An electronic device according to claim 17 wherein said electronic device is a mobile computer.
Claim 27
Dependent Claim
15 words
An electronic device according to claim 17 wherein said electronic device is a head-mount display.
Claim 28
Dependent Claim
17 words
An electronic device according to claim 17 wherein said electronic device is a motor vehicle navigation system.
Claim 29
Dependent Claim
15 words
An electronic device according to claim 17 wherein said electronic device is a cellular phone.
Claim 30
Dependent Claim
14 words
An electronic device according to claim 17 wherein said electronic device is a projector.
Claim 31
Dependent Claim
21 words
An electronic device according to claim 17 wherein said heavily doped region and said lightly doped region include an N-type impurity.
Claim 32
Dependent Claim
19 words
An electronic device according to claim 17 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 33
Dependent Claim
19 words
An electronic device according to claim 17 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 34
Dependent Claim
118 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region having no grain boundary; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1=10 15 to 1=10 21 atoms/cm 3 .
Claim 35
Dependent Claim
118 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region having no grain boundary; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1=10 15 to 1=10 21 atoms/cm 3 .
Claim 36
Dependent Claim
15 words
An electronic device according to claim 26 wherein said electronic device is a mobile computer.
Claim 37
Dependent Claim
15 words
An electronic device according to claim 26 wherein said electronic device is a head-mount display.
Claim 38
Dependent Claim
17 words
An electronic device according to claim 26 wherein said electronic device is a motor vehicle navigation system.
Claim 39
Dependent Claim
15 words
An electronic device according to claim 26 wherein said electronic device is a cellular phone.
Claim 40
Dependent Claim
14 words
An electronic device according to claim 26 wherein said electronic device is a projector.
Claim 41
Dependent Claim
21 words
An electronic device according to claim 26 wherein said heavily doped region and said lightly doped region include an N-type impurity.
Claim 42
Dependent Claim
19 words
An electronic device according to claim 26 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 43
Dependent Claim
19 words
An electronic device according to claim 26 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 44
Dependent Claim
120 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region including therein electrical inactive grain boundaries; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 45
Dependent Claim
120 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region including therein electrical inactive grain boundaries; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 46
Dependent Claim
14 words
An electronic device according to claim 35 wherein said electronic device is a projector.
Claim 47
Dependent Claim
15 words
An electronic device according to claim 35 wherein said electronic device is a mobile computer.
Claim 48
Dependent Claim
15 words
An electronic device according to claim 35 wherein said electronic device is a head-mount display.
Claim 49
Dependent Claim
16 words
An electronic device according to claim 35 wherein said electronic device is a motor vehicle navigation.
Claim 50
Dependent Claim
15 words
An electronic device according to claim 35 wherein said electronic device is a cellular phone.
Claim 51
Dependent Claim
21 words
An electronic device according to claim 35 wherein said heavily doped region and said lightly doped region include an N-type impurity.
Claim 52
Dependent Claim
19 words
An electronic device according to claim 35 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 53
Dependent Claim
19 words
An electronic device according to claim 35 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 54
Dependent Claim
126 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region including a single crystal; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 55
Dependent Claim
126 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; said active layer patterned in a mono-domain region including a single crystal; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 56
Dependent Claim
15 words
An electronic device according to claim 44 wherein said electronic device is a mobile computer.
Claim 57
Dependent Claim
15 words
An electronic device according to claim 44 wherein said electronic device is a head-mount display.
Claim 58
Dependent Claim
17 words
An electronic device according to claim 44 wherein said electronic device is a motor vehicle navigation system.
Claim 59
Dependent Claim
15 words
An electronic device according to claim 44 wherein said electronic device is a cellular phone.
Claim 60
Dependent Claim
14 words
An electronic device according to claim 44 wherein said electronic device is a projector.
Claim 61
Dependent Claim
21 words
An electronic device according to claim 44 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 62
Dependent Claim
19 words
An electronic device according to claim 44 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 63
Dependent Claim
19 words
An electronic device according to claim 44 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 64
Dependent Claim
144 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 65
Dependent Claim
144 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including therein a plurality of columnar or needle-like crystals substantially parallel to the substrate surface; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 66
Dependent Claim
15 words
An electronic device according to claim 53 wherein said electronic device is a mobile computer.
Claim 67
Dependent Claim
15 words
An electronic device according to claim 53 wherein said electronic device is a head-mount display.
Claim 68
Dependent Claim
17 words
An electronic device according to claim 53 wherein said electronic device is a motor vehicle navigation system.
Claim 69
Dependent Claim
15 words
An electronic device according to claim 53 wherein said electronic device is a cellular phone.
Claim 70
Dependent Claim
14 words
An electronic device according to claim 53 wherein said electronic device is a projector.
Claim 71
Dependent Claim
21 words
An electronic device according to claim 53 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 72
Dependent Claim
19 words
An electronic device according to claim 53 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 73
Dependent Claim
19 words
An electronic device according to claim 53 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 74
Dependent Claim
125 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a mono-domain region having no grain boundary; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 75
Dependent Claim
125 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a mono-domain region having no grain boundary; said insulating film underlying said active layer and having a pattern of projections or depressions; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 76
Dependent Claim
15 words
An electronic device according to claim 62 wherein said electronic device is a mobile computer.
Claim 77
Dependent Claim
15 words
An electronic device according to claim 62 wherein said electronic device is a head-mount display.
Claim 78
Dependent Claim
17 words
An electronic device according to claim 62 wherein said electronic device is a motor vehicle navigation system.
Claim 79
Dependent Claim
15 words
An electronic device according to claim 62 wherein said electronic device is a cellular phone.
Claim 80
Dependent Claim
14 words
An electronic device according to claim 62 wherein said electronic device is a projector.
Claim 81
Dependent Claim
21 words
An electronic device according to claim 62 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 82
Dependent Claim
19 words
An electronic device according to claim 62 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 83
Dependent Claim
19 words
An electronic device according to claim 62 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 84
Dependent Claim
135 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including therein electrical inactive grain boundaries; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 85
Dependent Claim
135 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including therein electrical inactive grain boundaries; said insulating film underlying said active layer and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 86
Dependent Claim
15 words
An electronic device according to claim 71 wherein said electronic device is a mobile computer.
Claim 87
Dependent Claim
15 words
An electronic device according to claim 71 wherein said electronic device is a head-mount display.
Claim 88
Dependent Claim
17 words
An electronic device according to claim 71 wherein said electronic device is a motor vehicle navigation system.
Claim 89
Dependent Claim
15 words
An electronic device according to claim 71 wherein said electronic device is a cellular phone.
Claim 90
Dependent Claim
14 words
An electronic device according to claim 71 wherein said electronic device is a projector.
Claim 91
Dependent Claim
21 words
An electronic device according to claim 71 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 92
Dependent Claim
19 words
An electronic device according to claim 71 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 93
Dependent Claim
19 words
An electronic device according to claim 71 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 94
Dependent Claim
133 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including a single crystal; said insulating film underlying said thin film and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 95
Dependent Claim
133 words
An electronic device having an active matrix display panel, said display panel comprising: a substrate having an insulating film on a surface thereof; an N-channel thin film transistor on said insulating film; an active layer formed of a semiconductive thin film of which thickness is 15 to 45 nm constituting said N-channel thin film transistor and having at least a heavily doped region, a channel region and a lightly doped region; at least said channel region and said lightly doped region patterned in a monodomain region including a single crystal; said insulating film underlying said thin film and having a pattern of at least one projection or at least one depression intentionally formed; and said active layer containing therein hydrogen at a predefined concentration of 1×10 15 to 1×10 21 atoms/cm 3 .
Claim 96
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a mobile computer.
Claim 97
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a head-mount display.
Claim 98
Dependent Claim
17 words
An electronic device according to claim 80 wherein said electronic device is a motor vehicle navigation system.
Claim 99
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a cellular phone.
Claim 100
Dependent Claim
14 words
An electronic device according to claim 80 wherein said electronic device is a projector.
Claim 101
Dependent Claim
21 words
An electronic device according to claim 80 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 102
Dependent Claim
19 words
An electronic device according to claim 80 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 103
Dependent Claim
19 words
An electronic device according to claim 80 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
Claim 104
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a mobile computer.
Claim 105
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a head-mount display.
Claim 106
Dependent Claim
17 words
An electronic device according to claim 80 wherein said electronic device is a motor vehicle navigation system.
Claim 107
Dependent Claim
15 words
An electronic device according to claim 80 wherein said electronic device is a cellular phone.
Claim 108
Dependent Claim
14 words
An electronic device according to claim 80 wherein said electronic device is a projector.
Claim 109
Dependent Claim
21 words
An electronic device according to claim 80 wherein said heavily doped region and said lightly doped region include a N-type impurity.
Claim 110
Dependent Claim
19 words
An electronic device according to claim 80 wherein said N-channel thin film transistor is a top-gate thin film transistor.
Claim 111
Dependent Claim
19 words
An electronic device according to claim 80 wherein said N-channel thin film transistor is a bottom-gate thin film transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-25 | 2004-01-24 | 2004-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-25 | 2008-01-24 | 2008-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-25 | 2012-01-24 | 2012-07-25 | $7700.00 | Window Closed / Lapsed |