US5858823A
Expired / Lapsed
US
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Semiconductor circuit for electro-optical device and method of manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-12-18
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Granted: 1999-01-12
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Expires: 2016-12-18
Abstract
Abstract In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1×10 16 to 5×1019 cm -3 , no metal element is added to the active region of the TFTs for the matrix region. The channel forming regions of at least a part of the TFTs constituting the peripheral circuit and the channel forming regions of the TFTs for the matrix region are formed by a silicon semiconductor thin film having a monodomain structure.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D86/00; H10D86/40; H10D86/421; H10D86/425; H10D86/60; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
149 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element on a first portion of said amorphous semiconductor film while said metal element is not introduced on a second portion of said amorphous semiconductor film, said metal element being capable of promoting crystallization of said semiconductor film; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film.
Claim 2
Independent Claim
149 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element on a first portion of said amorphous semiconductor film while said metal element is not introduced on a second portion of said amorphous semiconductor film, said metal element being capable of promoting crystallization of said semiconductor film; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film.
Claim 3
Dependent Claim
32 words
A method according to claim 1 wherein the metal element comprises at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
Claim 4
Independent Claim
167 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element on a first portion of said amorphous semiconductor film while said metal element is not introduced on a second portion of said amorphous semiconductor film, said metal element being capable of promoting crystallization of said semiconductor film; irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film, so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film, wherein said semiconductor film includes carbon and nitrogen at a concentration of 1×10 16 to 5×10 18 cm -3 and oxygen at a concentration of 1×10 17 to 5×10 19 cm -3 .
Claim 5
Independent Claim
167 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element on a first portion of said amorphous semiconductor film while said metal element is not introduced on a second portion of said amorphous semiconductor film, said metal element being capable of promoting crystallization of said semiconductor film; irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film, so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film, wherein said semiconductor film includes carbon and nitrogen at a concentration of 1×10 16 to 5×10 18 cm -3 and oxygen at a concentration of 1×10 17 to 5×10 19 cm -3 .
Claim 6
Dependent Claim
32 words
A method according to claim 3 wherein the metal element comprises at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
Claim 7
Independent Claim
180 words
A method for forming a semiconductor circuit for an electro-optical device said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element into a first portion of said amorphous semiconductor film while said metal element is not introduced into a second portion of said amorphous semiconductor film said metal element being capable of promoting crystallization of said semiconductor film; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film to crystallize said amorphous semiconductor film, so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film, wherein said semiconductor film includes carbon and nitrogen at a concentration of 1×10 16 to 5×10 18 cm -3 , and oxygen at a concentration of 1×10 17 to 5×10 19 cm -3 .
Claim 8
Independent Claim
180 words
A method for forming a semiconductor circuit for an electro-optical device said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; selectively introducing a metal element into a first portion of said amorphous semiconductor film while said metal element is not introduced into a second portion of said amorphous semiconductor film said metal element being capable of promoting crystallization of said semiconductor film; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film to crystallize said amorphous semiconductor film, so that at least said first portion of said crystallized semiconductor film includes no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film, wherein said semiconductor film includes carbon and nitrogen at a concentration of 1×10 16 to 5×10 18 cm -3 , and oxygen at a concentration of 1×10 17 to 5×10 19 cm -3 .
Claim 9
Dependent Claim
32 words
A method according to claim 5 wherein the metal element comprises at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
Claim 10
Independent Claim
149 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; introducing a metal element into a first portion of said amorphous semiconductor film at a first concentration while said metal element is introduced into a second portion of said amorphous semiconductor film at a second concentration, said first concentration being higher than said second concentration; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film to crystallize said amorphous semiconductor film, so that said first and second portions of said crystallized semiconductor film include no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film.
Claim 11
Independent Claim
149 words
A method for forming a semiconductor circuit for an electro-optical device, said method comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; introducing a metal element into a first portion of said amorphous semiconductor film at a first concentration while said metal element is introduced into a second portion of said amorphous semiconductor film at a second concentration, said first concentration being higher than said second concentration; heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film to crystallize said amorphous semiconductor film, so that said first and second portions of said crystallized semiconductor film include no grain boundary therein; forming an active matrix circuit in said second portion of said crystallized semiconductor film; and forming a peripheral driving circuit in said first portion of said crystallized semiconductor film.
Claim 12
Dependent Claim
32 words
A method according to claim 7 wherein the metal element comprises at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
Claim 13
Dependent Claim
14 words
A method according to claim 1 wherein said semiconductor film is a silicon film.
Claim 14
Dependent Claim
24 words
A method according to claim 1 wherein said first portion of the crystallized semiconductor film including no grain boundary therein is a monodomain region.
Claim 15
Dependent Claim
14 words
A method according to claim 3 wherein said semiconductor film is a silicon film.
Claim 16
Dependent Claim
24 words
A method according to claim 3 wherein said first portion of the crystallized semiconductor film including no grain boundary therein is a monodomain region.
Claim 17
Dependent Claim
14 words
A method according to claim 5 wherein said semiconductor film is a silicon film.
Claim 18
Dependent Claim
24 words
A method according to claim 5 wherein said first portion of the crystallized semiconductor film including no grain boundary therein is a monodomain region.
Claim 19
Dependent Claim
14 words
A method according to claim 7 wherein said semiconductor film is a silicon film.
Claim 20
Dependent Claim
28 words
A method according to claim 7 wherein each of said first and second portions of the crystallized semiconductor film including no grain boundary therein is a monodomain region.
Claim 21
Dependent Claim
31 words
A method according to claim 1 wherein said metal element is selectively introduced by forming a metal film comprising said metal element on said first portion of the amorphous semiconductor film.
Claim 22
Dependent Claim
30 words
A method according to claim 1 wherein said metal element is selectively introduced by adding a solution comprising said metal element on said first portion of the amorphous semiconductor film.
Claim 23
Independent Claim
87 words
A method of fabricating a semiconductor device comprising the steps of: forming an amorphous semiconductor film on an insulating surface; introducing a metal element adjacent to said amorphous semiconductor film, said metal element being capable of promoting crystallization of said amorphous semiconductor film; and heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film so that said crystallized semiconductor film includes no grain boundary therein.
Claim 24
Independent Claim
87 words
A method of fabricating a semiconductor device comprising the steps of: forming an amorphous semiconductor film on an insulating surface; introducing a metal element adjacent to said amorphous semiconductor film, said metal element being capable of promoting crystallization of said amorphous semiconductor film; and heating said amorphous semiconductor film at a temperature in the range of 450°-750° C. during irradiating whole surface of said amorphous semiconductor film with a light to crystallize said amorphous semiconductor film so that said crystallized semiconductor film includes no grain boundary therein.
Claim 25
Dependent Claim
40 words
A method according to claim 19 wherein said semiconductor film includes carbon and nitrogen at a concentration of 1×10 16 to 5×10 18 cm -3 , and oxygen at a concentration of 1×10 17 to 5×10 19 cm -3 .
Claim 26
Dependent Claim
32 words
A method according to claim 19 wherein said metal element comprises at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
Claim 27
Dependent Claim
10 words
A method according to claim 19 wherein said semiconductor film
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |