US5886366A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film type monolithic semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-05-29
•
Granted: 1999-03-23
•
Expires: 2017-05-29
Abstract
Abstract A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor film, and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film. The crystalline semiconductor film of the second plurality of thin film transistors has a substantially single crystalline structure (mono-domain structure) and is doped with a recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 atoms/cm 3 . The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D86/00; H10D86/40; H10D86/421; H10D86/425; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/382
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
120 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a channel region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a channel region comprising a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 2
Dependent Claim
120 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a channel region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a channel region comprising a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 3
Dependent Claim
34 words
A device according to claim 1 wherein said catalyst element is at least one element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, and Au.
Claim 4
Dependent Claim
122 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a first active region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a second active region comprising a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 5
Dependent Claim
122 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a first active region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a second active region comprising a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 6
Dependent Claim
34 words
A device according to claim 3 wherein said catalyst element is at least one element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, and Au.
Claim 7
Dependent Claim
23 words
A device according to claim 3 wherein each of said first and second active regions comprises at least source, drain and channel regions.
Claim 8
Dependent Claim
91 words
A semiconductor device comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate, each having a first channel region comprising an amorphous silicon semiconductor film; and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film, wherein said crystalline semiconductor film of said second plurality of thin film transistors has a substantially single crystalline structure and is doped with a recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 atoms/cm 3 .
Claim 9
Dependent Claim
91 words
A semiconductor device comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate, each having a first channel region comprising an amorphous silicon semiconductor film; and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film, wherein said crystalline semiconductor film of said second plurality of thin film transistors has a substantially single crystalline structure and is doped with a recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 atoms/cm 3 .
Claim 10
Dependent Claim
32 words
A semiconductor device according to claim 6 wherein said crystalline semiconductor film of said second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.
Claim 11
Dependent Claim
125 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a channel region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a channel region comprising a crystalline silicon semiconductor film having no crystal grain boundary in the channel region, and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 12
Dependent Claim
125 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on said substrate; and a peripheral driving circuit including a second plurality of thin film transistors formed on said substrate, for driving said active matrix elements, wherein each of said first plurality of thin film transistors has a channel region comprising an amorphous silicon semiconductor film, and wherein at least one of said second plurality of thin film transistors has a channel region comprising a crystalline silicon semiconductor film having no crystal grain boundary in the channel region, and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 13
Dependent Claim
34 words
A device according to claim 8 wherein said catalyst element is at least one element selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, and Au.
Claim 14
Dependent Claim
118 words
A semiconductor device comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate, each having a first channel region comprising an amorphous silicon semiconductor film; and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film, wherein said crystalline semiconductor film of said second plurality of thin film transistors has a substantially single crystalline structure containing point defects to be neutralized, wherein said crystalline silicon film of said second plurality of thin film transistors contains at least a material selected from the group consisting of hydrogen and halogen at a concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 15
Dependent Claim
118 words
A semiconductor device comprising: a substrate having an insulating surface; a first plurality of thin film transistors formed on said substrate, each having a first channel region comprising an amorphous silicon semiconductor film; and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film, wherein said crystalline semiconductor film of said second plurality of thin film transistors has a substantially single crystalline structure containing point defects to be neutralized, wherein said crystalline silicon film of said second plurality of thin film transistors contains at least a material selected from the group consisting of hydrogen and halogen at a concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 16
Dependent Claim
29 words
A semiconductor device according to claim 10 wherein said crystalline semiconductor film of said second plurality of thin film transistors contains a catalyst element for promoting crystallization of silicon.
Claim 17
Dependent Claim
72 words
An insulated gate field effect transistor comprising source and drain regions, a channel region, a gate insulating film adjacent to said channel region, and a gate electrode adjacent to said gate insulating film, wherein said channel region comprises a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 18
Dependent Claim
72 words
An insulated gate field effect transistor comprising source and drain regions, a channel region, a gate insulating film adjacent to said channel region, and a gate electrode adjacent to said gate insulating film, wherein said channel region comprises a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 19
Dependent Claim
16 words
A transistor according to claim 12 wherein said channel region is formed in a crystal grain.
Claim 20
Dependent Claim
22 words
A transistor according to claim 12 wherein said gate electrode is formed over said channel region having said gate insulating film therebetween.
Claim 21
Dependent Claim
14 words
A transistor according to claim 12 wherein said gate insulating film comprises silicon oxide.
Claim 22
Dependent Claim
22 words
A transistor according to claim 12 wherein said source and drain regions and said channel region are formed in a semiconductor island.
Claim 23
Dependent Claim
12 words
A transistor according to claim 16 wherein said semiconductor island comprises silicon.
Claim 24
Dependent Claim
88 words
An insulated gate field effect transistor comprising source and drain regions, a channel region, a gate insulating film adjacent to said channel region, and a gate electrode adjacent to said gate insulating film, wherein said channel region comprises a crystalline semiconductor film having a substantially single crystalline structure containing point defects to be neutralized, and wherein said crystalline semiconductor film contains at least a material selected from the group consisting of hydrogen and halogen at a concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 25
Dependent Claim
88 words
An insulated gate field effect transistor comprising source and drain regions, a channel region, a gate insulating film adjacent to said channel region, and a gate electrode adjacent to said gate insulating film, wherein said channel region comprises a crystalline semiconductor film having a substantially single crystalline structure containing point defects to be neutralized, and wherein said crystalline semiconductor film contains at least a material selected from the group consisting of hydrogen and halogen at a concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 26
Dependent Claim
16 words
A transistor according to claim 18 wherein said channel region is formed in a crystal grain.
Claim 27
Dependent Claim
22 words
A transistor according to claim 18 wherein said gate electrode is formed over said channel region having said gate insulating film therebetween.
Claim 28
Dependent Claim
14 words
A transistor according to claim 18 wherein said gate insulating film comprises silicon oxide.
Claim 29
Dependent Claim
22 words
A transistor according to claim 18 wherein said source and drain regions and said channel region are formed in a semiconductor island.
Claim 30
Dependent Claim
12 words
A transistor according to claim 22 wherein said semiconductor island comprises silicon.
Claim 31
Dependent Claim
178 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on an insulating surface, at least one of said first plurality of thin film transistors comprising first source and drain regions, a first channel region, a first gate insulating film adjacent to said first channel region, and a first gate electrode adjacent to said first gate insulating film; and a peripheral driving circuit including a second plurality of thin film transistors formed on said insulating surface, for driving said active matrix elements, at least one of said second plurality of thin film transistors comprising second source and drain regions, a second channel region, a second gate insulating film adjacent to said second channel region, and a second gate electrode adjacent to said second gate insulating film, wherein said second channel region comprises a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 32
Dependent Claim
178 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on an insulating surface, at least one of said first plurality of thin film transistors comprising first source and drain regions, a first channel region, a first gate insulating film adjacent to said first channel region, and a first gate electrode adjacent to said first gate insulating film; and a peripheral driving circuit including a second plurality of thin film transistors formed on said insulating surface, for driving said active matrix elements, at least one of said second plurality of thin film transistors comprising second source and drain regions, a second channel region, a second gate insulating film adjacent to said second channel region, and a second gate electrode adjacent to said second gate insulating film, wherein said second channel region comprises a crystalline silicon semiconductor film having a mono-domain structure and containing a catalyst element for promoting crystallization of said crystalline silicon semiconductor film at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 33
Dependent Claim
17 words
A transistor according to claim 24 wherein said second channel region is formed in a crystal grain.
Claim 34
Dependent Claim
25 words
A transistor according to claim 24 wherein said first gate electrode is formed over said first channel region having said first gate insulating film therebetween.
Claim 35
Dependent Claim
25 words
A transistor according to claim 24 wherein said second gate electrode is formed over said second channel region having said second gate insulating film therebetween.
Claim 36
Dependent Claim
17 words
A transistor according to claim 24 wherein said first and second gate insulating film comprise silicon oxide.
Claim 37
Dependent Claim
25 words
A transistor according to claim 24 wherein said first source and drain regions and said first channel region are formed in a first semiconductor island.
Claim 38
Dependent Claim
12 words
A transistor according to claim 29 wherein said semiconductor island comprises silicon.
Claim 39
Dependent Claim
25 words
A transistor according to claim 24 wherein said second source and drain regions and said second channel region are formed in a second semiconductor island.
Claim 40
Dependent Claim
12 words
A transistor according to claim 31 wherein said semiconductor island comprises silicon.
Claim 41
Dependent Claim
180 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on an insulating surface, at least one of said first thin film transistors comprising first source and drain regions, a first channel region, a first gate insulating film adjacent to said first channel region, and a first gate electrode adjacent to said first gate insulating film; and a peripheral driving circuit including a second plurality of thin film transistors formed on said insulating surface, for driving said active matrix elements, at least one of said second plurality of thin film transistors comprising second source and drain regions, a second channel region, a second gate insulating film adjacent to said second channel region, and a second gate electrode adjacent to said second gate insulating film, wherein said second channel region comprises crystalline semiconductor film having a substantially single crystalline structure and containing at least a material selected from the group consisting of hydrogen and halogen at the concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 42
Dependent Claim
180 words
A monolithic active matrix device formed on a substrate comprising: active matrix elements including a first plurality of thin film transistors formed on an insulating surface, at least one of said first thin film transistors comprising first source and drain regions, a first channel region, a first gate insulating film adjacent to said first channel region, and a first gate electrode adjacent to said first gate insulating film; and a peripheral driving circuit including a second plurality of thin film transistors formed on said insulating surface, for driving said active matrix elements, at least one of said second plurality of thin film transistors comprising second source and drain regions, a second channel region, a second gate insulating film adjacent to said second channel region, and a second gate electrode adjacent to said second gate insulating film, wherein said second channel region comprises crystalline semiconductor film having a substantially single crystalline structure and containing at least a material selected from the group consisting of hydrogen and halogen at the concentration of 1×10 16 cm -3 to 1×10 20 cm -3 .
Claim 43
Dependent Claim
17 words
A transistor according to claim 33 wherein said second channel region is formed in a crystal grain.
Claim 44
Dependent Claim
25 words
A transistor according to claim 33 wherein said first gate electrode is formed over said first channel region having said first gate insulating film therebetween.
Claim 45
Dependent Claim
25 words
A transistor according to claim 33 wherein said second gate electrode is formed over said second channel region having said second gate insulating film therebetween.
Claim 46
Dependent Claim
17 words
A transistor according to claim 33 wherein said first and second gate insulating film comprise silicon oxide.
Claim 47
Dependent Claim
25 words
A transistor according to claim 33 wherein said first source and drain regions and said first channel region are formed in a first semiconductor island.
Claim 48
Dependent Claim
12 words
A transistor according to claim 38 wherein said semiconductor island comprises silicon.
Claim 49
Dependent Claim
25 words
A transistor according to claim 33 wherein said second source and drain regions and said second channel region are formed in a second semiconductor island.
Claim 50
Dependent Claim
12 words
A transistor according to claim 40 wherein said semiconductor island comprises silicon.
Claim 51
Dependent Claim
49 words
A device according to claim 1 wherein said mono-domain structure has a crystal structure being regarded as a substantially single crystal, includes no crystal grain boundary, has points defects to be neutralized, and contains recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 cm -3 .
Claim 52
Dependent Claim
49 words
A device according to claim 3 wherein said mono-domain structure has a crystal structure being regarded as a substantially single crystal, includes no crystal grain boundary, has points defects to be neutralized, and contains recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 cm -3 .
Claim 53
Dependent Claim
49 words
A transistor according to claim 12 wherein said mono-domain structure has a crystal structure being regarded as a substantially single crystal, includes no crystal grain boundary, has points defects to be neutralized, and contains recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 cm -3 .
Claim 54
Dependent Claim
49 words
A device according to claim 24 wherein said mono-domain structure has a crystal structure being regarded as a substantially single crystal, includes no crystal grain boundary, has points defects to be neutralized, and contains recombination center neutralizer at a concentration of 1×10 16 to 1×10 20 cm -3 .
References Cited (Backward Citations)
US5315132A
Cited
US5313075A
Cited
US5147826A
Cited
US5648662A
Cited
US5604360A
Cited
US5563426A
Cited
US5403772A
Cited
US5696386A
Cited
US5608232A
Cited
US5639698A
Cited
US5275851A
Cited
US5614733A
Cited
US5595944A
Cited
US5646424A
Cited
US5677549A
Cited
US5569936A
Cited
US5569610A
Cited
US5580792A
Cited
US5624851A
Cited
US5426064A
Cited
US5595923A
Cited
US5501989A
Cited
US5589694A
Cited
US5481121A
Cited
US5488000A
Cited
US5663077A
Cited
US5529937A
Cited
US5492843A
Cited
US5696388A
Cited
US5614426A
Cited
US5508533A
Cited
US5637515A
Cited
US5534716A
Cited
US5616506A
Cited
US5643826A
Cited
US5612250A
Cited
US5543352A
Cited
US5585291A
Cited
US5654203A
Cited
US5705829A
Cited
US5605846A
Cited
US5656825A
Cited
US5620910A
Cited
US5712191A
Cited
US5621224A
Cited
US5606179A
Cited
US5756364A
Cited
US5700333A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |