Patent US6998014B2 successfully refreshed from Google Patents.
US6998014B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for plasma assisted deposition
Assignee: Applied Materials Inc
•
Filing: 2002-07-16
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Granted: 2006-02-14
•
Expires: 2022-07-16
Abstract
Abstract Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
Inventors
- 👤 Chen-An Chen
- 👤 Avgerinos Gelatos
- 👤 Michael X. Yang
- 👤 Ming Xi
- 👤 Mark M. Hytros
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/22; C23C16/30; C23C16/34; C23C16/42; C23C16/44; C23C16/448; C23C16/452; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/4554; C23C16/45544; C23C16/45563; C23C16/45565; C23C16/50; C23C16/515; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32431; H01J37/3244; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P14/418; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/68; H10P14/683; H10P14/687
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
183 words
A substrate processing chamber, comprising: a top shower plate, wherein the top shower plate comprises holes in communication with a top surface and a bottom surface of the top shower plate; a bottom shower plate, wherein the bottom shower plate comprises columns having column holes in communication with a top surface and a bottom surface of the bottom shower plate and comprises grooves having groove holes in communication with the bottom surface of the bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a gas box having a first gas channel; a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate, the aperture of the bottom shower plate in communication with the grooves of the bottom shower plate, wherein the gas conduit comprises an insulating material; a power source coupled to the top shower plate; and a controller adapted to control the power source to provide pulses of power to the top shower plate.
Claim 2
Dependent Claim
183 words
A substrate processing chamber, comprising: a top shower plate, wherein the top shower plate comprises holes in communication with a top surface and a bottom surface of the top shower plate; a bottom shower plate, wherein the bottom shower plate comprises columns having column holes in communication with a top surface and a bottom surface of the bottom shower plate and comprises grooves having groove holes in communication with the bottom surface of the bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a gas box having a first gas channel; a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate, the aperture of the bottom shower plate in communication with the grooves of the bottom shower plate, wherein the gas conduit comprises an insulating material; a power source coupled to the top shower plate; and a controller adapted to control the power source to provide pulses of power to the top shower plate.
Claim 3
Dependent Claim
37 words
The substrate processing chamber of claim 1 , wherein the first gas channel is adapted to deliver one or more gases from the gas box through the gas conduit to the grooves of the bottom shower plate.
Claim 4
Dependent Claim
31 words
The substrate processing chamber of claim 1 , wherein the aperture of the bottom shower plate is located at a central portion on a top surface of the bottom shower plate.
Claim 5
Dependent Claim
42 words
The substrate processing chamber of claim 1 , wherein the gas box further comprises a second gas channel, the second gas channel adapted to deliver one or more gases from the gas box to the top surface of the top shower plate.
Claim 6
Dependent Claim
41 words
The substrate processing chamber of claim 4 , wherein the first gas channel is located at a central portion of the gas box and wherein the second gas channel comprises one or more outer gas channels adjacent the first gas channel.
Claim 7
Dependent Claim
22 words
The substrate processing chamber of claim 4 , wherein the first gas channel is coupled to a refractory metal containing gas source.
Claim 8
Dependent Claim
21 words
The substrate processing chamber of claim 6 , wherein the refractory metal containing gas source is a titanium containing gas source.
Claim 9
Dependent Claim
24 words
The substrate processing chamber of claim 6 , further comprising a valve coupling the refractory metal containing gas source and the first gas channel.
Claim 10
Dependent Claim
34 words
The substrate processing chamber of claim 8 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a refractory metal containing compound from the refractory metal containing gas source.
Claim 11
Dependent Claim
21 words
The substrate processing chamber of claim 4 , wherein the second gas channel is coupled to a hydrogen containing gas source.
Claim 12
Dependent Claim
23 words
The substrate processing chamber of claim 10 , further comprising a valve coupling the hydrogen containing gas source and the second gas channel.
Claim 13
Dependent Claim
32 words
The substrate processing chamber of claim 11 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen containing gas from the hydrogen containing gas source.
Claim 14
Dependent Claim
21 words
The substrate processing chamber of claim 4 , wherein the second gas channel is coupled to a hydrogen/nitrogen containing gas source.
Claim 15
Dependent Claim
34 words
The substrate processing chamber of claim 13 , wherein the hydrogen/nitrogen containing gas source is adapted to selectively provide a hydrogen/nitrogen containing gas comprising a hydrogen gas to a nitrogen gas in varying ratios.
Claim 16
Dependent Claim
23 words
The substrate processing chamber of claim 13 , further comprising a valve coupling the hydrogen/nitrogen containing gas source and the second gas channel.
Claim 17
Dependent Claim
32 words
The substrate processing chamber of claim 15 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen/nitrogen containing gas from the hydrogen/nitrogen containing gas source.
Claim 18
Dependent Claim
32 words
The substrate processing chamber of claim 1 , wherein power to the top shower plate is adapted to generate pulses of plasma between the top shower plate and the bottom shower plate.
References Cited (Backward Citations)
US6482262B1
Cited
JPS4111418Y1
Cited
JPS4328874Y1
Cited
JPS4325500Y1
Cited
JPS5029228Y2
Cited
JPS5186295U
Cited
JPS5235047Y2
Cited
JPS512189Y2
Cited
JPS526036Y2
Cited
JPS5251339Y2
Cited
JPS5047666U
Cited
JPS5047668U
Cited
JPS5074724U
Cited
JPS5074717U
Cited
JPS5343685Y2
Cited
JPS5343327Y2
Cited
JPS5160152U
Cited
US4058430A
Cited
JPS5175145U
Cited
JPS5175143U
Cited
JPS534334Y2
Cited
JPS5182906U
Cited
JPS5270997U
Cited
JPS5283339U
Cited
JPS5291152U
Cited
JPS5234899Y1
Cited
JPS6132236B2
Cited
JPS6222388Y2
Cited
US4413022A
Cited
JPS6045606B2
Cited
US4389973A
Cited
JPS6252057B2
Cited
JPS6135847Y2
Cited
JPS6224138Y2
Cited
JPS5897917U
Cited
JPS58100419U
Cited
JPS6230421Y2
Cited
US4486487A
Cited
JPS6362313B2
Cited
JPS6065712U
Cited
US4806321A
Cited
US5294286A
Cited
US4975252A
Cited
US5693139A
Cited
US5443033A
Cited
JPS6177381U
Cited
JPS6196809U
Cited
US4839022A
Cited
JPS61210623A
Cited
US5250148A
Cited
JPS6269508U
Cited
JPS6291048U
Cited
JPS6291495U
Cited
JPS62141717U
Cited
JPS62232919A
Cited
JPS62171999U
Cited
JPS62167297U
Cited
US4917556A
Cited
US4838983A
Cited
US4767494A
Cited
US4960720A
Cited
US5246536A
Cited
US4834831A
Cited
JPS6385098U
Cited
JPS6390833U
Cited
US4838993A
Cited
US5000113A
Cited
US5882165A
Cited
US4951601A
Cited
US5923985A
Cited
US4813846A
Cited
JPS63222420A
Cited
JPS63222421A
Cited
JPS63227007A
Cited
US4845049A
Cited
US4861417A
Cited
JPS63252420A
Cited
JPS63266814A
Cited
US5441703A
Cited
US5348911A
Cited
US4840921A
Cited
US4859627A
Cited
US4876218A
Cited
US4993357A
Cited
FR2626110A1
Cited
US5166092A
Cited
US5300186A
Cited
US5130269A
Cited
US5484664A
Cited
EP0344352B1
Cited
US5439876A
Cited
US4927670A
Cited
WO1990002216A1
Cited
US5234561A
Cited
US4931132A
Cited
US5013683A
Cited
US5374570A
Cited
US5186718A
Cited
US5527733A
Cited
US5028565A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-02-13 | 2009-08-15 | 2010-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-02-13 | 2013-08-15 | 2014-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-02-13 | 2017-08-15 | 2018-02-14 | $7700.00 | Window Closed / Lapsed |