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US6403451B1
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Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
Assignee: NORTH CARLOINA STATE University
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Filing: 2000-02-09
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Granted: 2002-06-11
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Expires: 2020-02-09
Abstract
Abstract A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.
Inventors
- 👤 Kevin J. Linthicum
- 👤 Thomas Gehrke
- 👤 Robert F. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/24; H10P14/2924; H10P14/2925; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3214; H10P14/3216; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
72 words
A method of fabricating gallium nitride semiconductor structures comprising the steps of: providing a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors; growing gallium nitride on the non-gallium nitride posts, including growing gallium nitride pyramids on the non-gallium nitride tops; and growing gallium nitride on the gallium nitride pyramids.
Claim 2
Independent Claim
72 words
A method of fabricating gallium nitride semiconductor structures comprising the steps of: providing a substrate including a plurality of non-gallium nitride posts that define trenches therebetween, the non-gallium nitride posts including non-gallium nitride sidewalls and non-gallium nitride tops, and the trenches including non-gallium nitride floors; growing gallium nitride on the non-gallium nitride posts, including growing gallium nitride pyramids on the non-gallium nitride tops; and growing gallium nitride on the gallium nitride pyramids.
Claim 3
Dependent Claim
34 words
A method according to claim 1 wherein the step of growing gallium nitride pyramids comprises the step of simultaneously growing gallium nitride pyramids on the non-gallium nitride tops and on the non-gallium nitride floors.
Claim 4
Dependent Claim
45 words
A method according to claim 2 wherein the step of growing gallium nitride pyramids further comprises the step of simultaneously growing a conformal gallium nitride layer on the sidewalls, between the gallium nitride pyramids on the non-gallium nitride tops and on the non-gallium nitride floors.
Claim 5
Dependent Claim
43 words
A method according to claim 1 wherein the step of growing gallium nitride on the gallium nitride pyramids comprises the step of growing gallium nitride on the gallium nitride pyramids until the grown gallium nitride coalesces to form a continuous gallium nitride layer.
Claim 6
Dependent Claim
30 words
A method according to claim 4 wherein the step of growing gallium nitride on the gallium nitride pyramids further comprises the step of simultaneously filling the trenches with gallium nitride.
Claim 7
Dependent Claim
46 words
A method according to claim 1 wherein the step of growing gallium nitride pyramids is performed at a first temperature and wherein the step of growing gallium nitride on the gallium nitride pyramids is performed at a second temperature that is higher than the first temperature.
Claim 8
Dependent Claim
35 words
A method according to claim 6 wherein the step of growing gallium nitride pyramids and the step of growing gallium nitride on the gallium nitride pyramids are performed at same processing conditions other than temperature.
Claim 9
Dependent Claim
40 words
A method according to claim 1 wherein the growing step comprises the steps of: first growing the gallium nitride at a first temperature; and then growing the gallium nitride at a second temperature that is higher than the first temperature.
Claim 10
Dependent Claim
42 words
A method according to claim 1 wherein the following step is performed between the steps of providing and growing: forming a conformal buffer layer on the substrate including on the non-gallium nitride sidewalls, the non-gallium nitride tops and the non-gallium nitride floors.
Claim 11
Dependent Claim
37 words
A method according to claim 1 wherein the providing step comprises the steps of: providing a non-gallium nitride substrate; and etching the non-gallium nitride substrate to define the plurality of non-gallium nitride posts and the trenches therebetween.
Claim 12
Dependent Claim
27 words
A method according to claim 8 wherein the first temperature is at most about 1000° C. and wherein the second temperature is at least about 1100° C.
Claim 13
Dependent Claim
29 words
A method according to claim 1 wherein the growing step comprises the step of masklessly growing gallium nitride on the non-gallium nitride posts, including on the non-gallium nitride tops.
Claim 14
Dependent Claim
21 words
A method according to claim 1 wherein the non-gallium nitride sidewalls expose a 1{overscore (1)}20 plane of the non-gallium nitride posts.
Claim 15
Independent Claim
90 words
A method of fabricating semiconductor structures comprising the steps of: providing a substrate comprising a first material, the substrate including a plurality of posts that comprise the first material and that define trenches therebetween, the posts including sidewalls and tops that comprise the first material, and the trenches including floors that comprise the first material; growing a second material on the posts, including growing pyramids of the second material on the first material tops; and growing the second material on the pyramids; wherein the second material is nitride based semiconductor.
Claim 16
Independent Claim
90 words
A method of fabricating semiconductor structures comprising the steps of: providing a substrate comprising a first material, the substrate including a plurality of posts that comprise the first material and that define trenches therebetween, the posts including sidewalls and tops that comprise the first material, and the trenches including floors that comprise the first material; growing a second material on the posts, including growing pyramids of the second material on the first material tops; and growing the second material on the pyramids; wherein the second material is nitride based semiconductor.
Claim 17
Dependent Claim
47 words
A method according to claim 14 wherein the step of growing the second semiconductor material on the pyramids comprises the step of growing the second semiconductor material on the pyramids until the grown second semiconductor material coalesces to form a continuous layer of the second semiconductor material.
Claim 18
Dependent Claim
36 words
A method according to claim 14 wherein the following step is performed between the steps of providing and growing: forming a conformal buffer layer on the substrate including on the sidewalls, the tops and the floors.
Claim 19
Dependent Claim
33 words
A method according to claim 14 wherein the growing step comprises the step of masklessly growing the second semiconductor structure material on the posts, including on the tops that comprise the first material.
Claim 20
Dependent Claim
18 words
A method according to claim 14 wherein the sidewalls expose a 1{overscore (1)}20 plane of the first material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-10 | 2005-12-10 | 2006-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-10 | 2013-12-10 | 2014-06-11 | $7700.00 | Window Closed / Lapsed |