US6064078A
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Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
Assignee: Xerox Corp
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Filing: 1998-05-22
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Granted: 2000-05-16
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Expires: 2018-05-22
Abstract
Abstract A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.
Inventors
- 👤 John E. Northrup
- 👤 Linda T. Romano
- 👤 Ross D. Bringans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:08
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3246; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
38 words
A semiconductor structure, comprising: a substrate; an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element; and a group III-V nitride film formed on the interlayer.
Claim 2
Dependent Claim
38 words
A semiconductor structure, comprising: a substrate; an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element; and a group III-V nitride film formed on the interlayer.
Claim 3
Dependent Claim
19 words
The semiconductor structure of claim 1, wherein the interlayer further includes atoms of at least one group III element.
Claim 4
Dependent Claim
24 words
The semiconductor structure of claim 1, wherein the interlayer includes about a monolayer of the atoms of the at least one group II element.
Claim 5
Dependent Claim
16 words
The semiconductor structure of claim 1, wherein the group III-V nitride film is GaN or AlN.
Claim 6
Dependent Claim
13 words
The semiconductor structure of claim 1, wherein the substrate is a sapphire substrate.
Claim 7
Dependent Claim
21 words
The semiconductor structure of claim 1, wherein the substrate is a sapphire substrate and the group III-V nitride film is AlN.
Claim 8
Dependent Claim
47 words
The semiconductor structure of claim 6, wherein the sapphire substrate is c-plane and the ratio of the number of oxygen atoms in each (0001) plane of the sapphire substrate to the number of group II atoms of the interlayer bonding with the oxygen atoms is about 1.25.
Claim 9
Dependent Claim
11 words
The semiconductor structure of claim 7, wherein the interlayer includes zinc.
Claim 10
Dependent Claim
25 words
The semiconductor structure of claim 6, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.
Claim 11
Dependent Claim
11 words
The semiconductor structure of claim 9, wherein the interlayer includes zinc.
Claim 12
Dependent Claim
24 words
The semiconductor structure of claim 6, wherein an interface between the substrate and the group III-V nitride film has at least approximate charge neutrality.
Claim 13
Dependent Claim
15 words
The semiconductor structure of claim 1, wherein the III-V nitride film is an epitaxial layer.
Claim 14
Dependent Claim
50 words
A semiconductor structure comprising: a substrate; an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element; a group III-V nitride buffer layer formed on the interlayer; and an epitaxial group III-V nitride film formed on the buffer layer.
Claim 15
Dependent Claim
50 words
A semiconductor structure comprising: a substrate; an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element; a group III-V nitride buffer layer formed on the interlayer; and an epitaxial group III-V nitride film formed on the buffer layer.
Claim 16
Dependent Claim
24 words
The semiconductor structure of claim 13, wherein the interlayer includes about a monolayer of the atoms of the at least one group II element.
Claim 17
Dependent Claim
23 words
The semiconductor structure of claim 13, wherein the group III-V nitride buffer layer is AlN and the group II-V nitride film is GaN.
Claim 18
Dependent Claim
19 words
The semiconductor structure of claim 13, wherein the interlayer further includes atoms of at least one group III element.
Claim 19
Dependent Claim
24 words
The semiconductor structure of claim 16, wherein an interface formed between the substrate and the group III-V nitride buffer layer has exact charge neutrality.
Claim 20
Dependent Claim
20 words
The semiconductor structure of claim 13, wherein the substrate comprises sapphire and the group III-V nitride buffer layer is AlN.
Claim 21
Dependent Claim
36 words
The semiconductor structure of claim 18, wherein the sapphire substrate is c-plane and the ratio of oxygen atoms in each (0001) plane of the sapphire substrate to group II atoms in the interlayer is about 1.25.
Claim 22
Dependent Claim
11 words
The semiconductor structure of claim 19, wherein the interlayer includes zinc.
Claim 23
Dependent Claim
25 words
The semiconductor structure of claim 18, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.
Claim 24
Dependent Claim
11 words
The semiconductor structure of claim 21, wherein the interlayer includes zinc.
Claim 25
Dependent Claim
25 words
The semiconductor structure of claim 13, wherein an interface between the substrate and the group III-V nitride buffer layer has at least approximate charge neutrality.
Claim 26
Dependent Claim
13 words
The semiconductor structure of claim 13, wherein the substrate is a sapphire substrate.
Claim 27
Dependent Claim
43 words
The semiconductor structure of claim 13, wherein the interlayer comprises an effective number of atoms of the at least one group II element to achieve at least approximate charge neutrality at an interface between the substrate and the group III-V nitride buffer layer.
Claim 28
Independent Claim
41 words
A method of forming a semiconductor structure, comprising: providing a substrate; forming an interlayer including a single atomic layer of atoms of at least one group II element on the substrate; and forming a group III-V nitride layer on the interlayer.
Claim 29
Independent Claim
41 words
A method of forming a semiconductor structure, comprising: providing a substrate; forming an interlayer including a single atomic layer of atoms of at least one group II element on the substrate; and forming a group III-V nitride layer on the interlayer.
Claim 30
Dependent Claim
23 words
The method of claim 26, wherein an interface between the substrate and the group III-V nitride layer has at least approximate charge neutrality.
Claim 31
Dependent Claim
13 words
The method of claim 26, wherein the group III-V nitride layer is GaN.
Claim 32
Dependent Claim
37 words
The method of claim 26, wherein forming the group III-V nitride layer on the interlayer comprises: forming a group III-V buffer layer on the interlayer; and epitaxially depositing a group III-V nitride film on the buffer layer.
Claim 33
Dependent Claim
19 words
The method of claim 29, wherein the buffer layer is AlN and the group III-V nitride film is GaN.
Claim 34
Dependent Claim
43 words
The method of claim 26, wherein the interlayer comprises atoms of at least one group II element and atoms of at least one group III element, and an interface formed between the substrate and the group III-V nitride layer has exact charge neutrality.
Claim 35
Dependent Claim
18 words
The method of claim 26, wherein the substrate comprises sapphire and the group III-V nitride layer is AlN.
Claim 36
Dependent Claim
60 words
The method of claim 32, wherein the sapphire substrate is c-plane and forming the interlayer comprises depositing group II atoms on the sapphire substrate such that the ratio of the number of oxygen atoms in each (0001) plane of the sapphire substrate to the number of group II atoms of the interlayer bonding with the oxygen atoms is about 1.25.
Claim 37
Dependent Claim
10 words
The method of claim 33, wherein the interlayer includes zinc.
Claim 38
Dependent Claim
24 words
The method of claim 32, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.
Claim 39
Dependent Claim
10 words
The method of claim 35, wherein the interlayer includes zinc.
Claim 40
Dependent Claim
24 words
The method of claim 26, wherein forming the group III-V nitride layer comprises growing the group III-V nitride layer substantially two-dimensionally on the interlayer.
Claim 41
Dependent Claim
25 words
The method of claim 26, wherein forming the interlayer comprises ion implanting the atoms of the at least one group II element into the substrate.
Claim 42
Dependent Claim
25 words
The method of claim 26, wherein forming the interlayer comprises depositing a thin oxide layer of the least one group II element on the substrate.
Claim 43
Dependent Claim
10 words
The method of claim 26, wherein the substrate comprises sapphire.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-05-16 | 2003-11-15 | 2004-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-16 | 2007-11-15 | 2008-05-16 | $3760.00 | Window Closed / Lapsed |
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