US5306386A
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US
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Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
Assignee: The AT&T MVPD Group LLC
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Filing: 1993-04-06
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Granted: 1994-04-26
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Expires: 2013-04-06
Abstract
Abstract Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The ternary II-VI semiconductor film is then formed over the arsenic monolayer, either directly thereon or on top of an intermediate II-VI semiconductor buffer layer (18). The use of an arsenic passivating layer facilitates the epitaxial deposition of technologically important II-VI semiconductors such as ZnTe, CdTe, and HgCdTe on silicon substrates of arbitrary crystallographic orientation.
Inventors
- 👤 Terence J. de Lyon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:28
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3242; H10P14/3244; H10P14/3246; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; H10P14/3466; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S438/00; Y10S438/93; Y10S438/933
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
67 words
A method of growing a ternary or quaternary II-VI semiconductor layer on a silicon substrate, comprising: (a) providing said silicon substrate having a major surface; (b) depositing a monolayer of a Group V element selected from the group consisting of arsenic, phosphorus, and antimony on said major surface of said silicon substrate; and (c) depositing said ternary or quaternary II-VI semiconductor layer over said Group V monolayer.
Claim 2
Independent Claim
67 words
A method of growing a ternary or quaternary II-VI semiconductor layer on a silicon substrate, comprising: (a) providing said silicon substrate having a major surface; (b) depositing a monolayer of a Group V element selected from the group consisting of arsenic, phosphorus, and antimony on said major surface of said silicon substrate; and (c) depositing said ternary or quaternary II-VI semiconductor layer over said Group V monolayer.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said monolayer consists essentially of arsenic.
Claim 4
Dependent Claim
35 words
The method of claim 1 further including, subsequent to step (b), depositing a II-VI buffer layer on said Group V monolayer and then depositing said ternary or quaternary II-VI semiconductor compound on said buffer layer.
Claim 5
Dependent Claim
17 words
The method of claim 3 wherein said buffer layer comprises a binary or ternary II-VI buffer layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-25 | 1997-10-25 | 1998-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-25 | 2001-10-25 | 2002-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-25 | 2005-10-25 | 2006-04-26 | $7700.00 | Window Closed / Lapsed |