US5136347A
Expired / Lapsed
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Semiconductor structure
Assignee: Mitsubishi Electric Corp
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Filing: 1990-10-31
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Granted: 1992-08-04
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Expires: 2010-10-31
Abstract
Abstract A semiconductor structure includes a single crystal silicon body, a relatively thin single crystal aluminum arsenide layer disposed on the silicon body, a relatively thin single crystal gallium arsenide layer disposed on the aluminum arsenide layer, and a relatively thick single crystal compound semiconductor layer disposed on the gallium arsenide layer.
Inventors
- 👤 Takashi Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
82 words
A semiconductor structure comprising: a single crystal Si body; a single crystal AlAs layer disposed on said Si body; a single crystal first GaAs layer disposed on said AlAs layer wherein said AlAs and first GaAs layers are each at least 50 Å thick and the total of the thicknesses of said AlAs layer and said first GaAs layer does not exceed 700 Å; and a single crystal compound semiconductor layer at least 2 microns thick disposed on said first GaAs layer.
Claim 2
Dependent Claim
82 words
A semiconductor structure comprising: a single crystal Si body; a single crystal AlAs layer disposed on said Si body; a single crystal first GaAs layer disposed on said AlAs layer wherein said AlAs and first GaAs layers are each at least 50 Å thick and the total of the thicknesses of said AlAs layer and said first GaAs layer does not exceed 700 Å; and a single crystal compound semiconductor layer at least 2 microns thick disposed on said first GaAs layer.
Claim 3
Dependent Claim
17 words
A semiconductor structure in accordance with claim 1 wherein compound semiconductor layer is a second GaAs layer.
Claim 4
Dependent Claim
63 words
A semiconductor structure in accordance with claim 2 wherein said AlAs layer is formed on said Si body at a first temperature, said first GaAs layer is formed on said AlAs layer at a temperature approximately the same as the first temperature, and said second GaAs layer is formed on said first GaAs layer at a second temperature higher than the first temperature.
Claim 5
Dependent Claim
43 words
A semiconductor structure in accordance with claim 3 wherein said AlAs layer and said first GaAs layer are formed at about 400° C. by the MOCVD method, and said second GaAs semiconductor layer is formed at about 700° C. by the MOCVD method.
Claim 6
Dependent Claim
37 words
A semiconductor structure in accordance with claim 2 wherein said AlAs layer is about 200Å in thickness, said firs GaAs layer is about 100Å in thickness, and said second GaAs layer is about 2 microns in thickness.
Claim 7
Dependent Claim
26 words
A semiconductor structure in accordance with claim 1 wherein said compound semiconductor layer is chosen from the group consisting of GaAs AlGaAs, InP, InGaAs, and InGaAsP.
Claim 8
Dependent Claim
18 words
A semiconductor structure in accordance with claim 1 wherein said Si body is disposed on a sapphire substrate.
Claim 9
Independent Claim
75 words
A method of making a semiconductor structure including: growing a single crystal AlAs layer at least 50 Å thick on a single crystal silicon body; growing a first GaAs layer at least 50 Å thick on the AlAs layer, the total of the thicknesses of the AlAs layer and the first GaAs layer not exceeding 700 Å; and growing a single crystal compound semiconductor layer at least 2 microns thick on the first GaAs layer.
Claim 10
Independent Claim
75 words
A method of making a semiconductor structure including: growing a single crystal AlAs layer at least 50 Å thick on a single crystal silicon body; growing a first GaAs layer at least 50 Å thick on the AlAs layer, the total of the thicknesses of the AlAs layer and the first GaAs layer not exceeding 700 Å; and growing a single crystal compound semiconductor layer at least 2 microns thick on the first GaAs layer.
Claim 11
Dependent Claim
48 words
The method of claim 8 including growing the AlAs and first GaAs layers at approximately the same temperature and growing a second GaAs layer as the compound semiconductor layer at a temperature higher than the temperatures at which the AlAs layer and the first GaAs layer are grown.
Claim 12
Dependent Claim
34 words
The method of claim 9 including growing the AlAs and GaAs layers by the MOCVD method at about 400° C. and growing the second GaAs layer at abut 700° C. by the MOCVD method.
Claim 13
Dependent Claim
34 words
The method of claim 9 including growing the AlAs layer to about a 200Å thickness, the GaAs layer to about a 100Å thickness, and the second GaAs layer to about a 2 micron thickness.
References Cited (Backward Citations)
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