Method for producing epitaxial iii-v semiconductor layers containing gallium
Abstract
Abstract A METHOD AND APPARATUS FOR PRODUCING EPITAXIAL III-V SEMICONDUCTOR LAYERS OF GALLIUM IN TWO STAGES, WHERE IN THE FIRST STAGE GALLIUM-I-CHLORIDE IS PRODUCED BY HEATING A GAS STEAM CONSISTING OF HYDROGEN AND GALLIUM-III-CHLORIDE TO A TEMPERATURE OF 700-900*C. IN THE PRESENCE OF A CATALYST CONSISTING OF AN ELEMENT OF THE 5TH, 6TH OR 8TH SUB-GROUP OF THE PERIODIC SYSTEM, AND IN THE SECOND STAGE SAID GALLIUM-I-CHLORIDE IS CONVERTED INTO A GAS STREAM OF III-V SEMICONDUCTOR MATERIAL BY HEATING SAID GALLIUM-ICHLORIDE TO A TEMPERATURE OF 600-700*C. IN ADMIXTURE WITH AN ELEMENT OF THE 5TH MAIN GROUP OF THE PERIODIC SYSTEM, AND THEN SAID III-V SEMICONDUCTTOR MATERIAL IS DEPOSITED ON A SEMICONDUCTOR SUBSTRATE.
Inventors
- 👤 W Dietz
- 👤 H Seiter
Bibliographic Details
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