Patent US6146959A successfully refreshed from Google Patents.
US6146959A
Expired / Lapsed
US
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Method of forming capacitors containing tantalum
Assignee: Micron Technology Inc
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Filing: 1998-06-15
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Granted: 2000-11-14
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Expires: 2018-06-15
Abstract
Abstract The invention pertains to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method of forming a dielectric layer comprising: a) forming a first tantalum-comprising layer; and b) forming a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate; b) forming a first layer over the first capacitor plate, the first layer comprising tantalum and oxygen; c) annealing the first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine and hydrazoic acid; the annealing forming a second layer over the first layer; and d) forming a second capacitor plate over the second layer.
Inventors
- 👤 Scott Jeffrey DeBoer
- 👤 F. Daniel Gealy
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/40; H10P14/418; H10P14/65; H10P14/6516; H10P14/6548; H10D1/682; H10D1/684; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6532; H10P14/6544
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas comprising hydrazoic acid, NF 3 , or mixtures thereof, the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 2
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas comprising hydrazoic acid, NF 3 , or mixtures thereof, the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the nitrogen-comprising gas consists essentially of hydrazoic acid.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein the nitrogen-comprising gas consists essentially of NF 3 .
Claim 5
Dependent Claim
35 words
The method of claim 1 wherein the first layer comprises an outer surface and wherein the forming of the second layer comprises chemical vapor depositing a material comprising tantalum and nitrogen onto the outer surface.
Claim 6
Independent Claim
73 words
A method of forming a capacitor comprising: forming a first capacitor plate comprising polysilicon; forming a silicon nitride layer over the polysilicon; forming a first layer as a dielectric over the silicon nitride layer, the first layer comprising tantalum; forming a second layer over the first layer, the second layer comprising at least some of the tantalum of the first layer and nitrogen; and forming a second capacitor plate over the second layer.
Claim 7
Independent Claim
73 words
A method of forming a capacitor comprising: forming a first capacitor plate comprising polysilicon; forming a silicon nitride layer over the polysilicon; forming a first layer as a dielectric over the silicon nitride layer, the first layer comprising tantalum; forming a second layer over the first layer, the second layer comprising at least some of the tantalum of the first layer and nitrogen; and forming a second capacitor plate over the second layer.
Claim 8
Independent Claim
87 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas, the second layer comprising some of the tantalum of the first layer and some of the nitrogen of the nitrogen-comprising gas; and forming a second capacitor plate over the second layer.
Claim 9
Independent Claim
87 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas, the second layer comprising some of the tantalum of the first layer and some of the nitrogen of the nitrogen-comprising gas; and forming a second capacitor plate over the second layer.
Claim 10
Dependent Claim
27 words
The method of claim 6 wherein the nitrogen-comprising gas comprises one or more gases selected from a group consisting of hydrazine, hydrazoic acid, NF 3 and ammonia.
Claim 11
Dependent Claim
13 words
The method of claim 6 wherein the nitrogen-comprising gas consists essentially of hydrazine.
Claim 12
Dependent Claim
14 words
The method of claim 6 wherein the nitrogen-comprising gas consists essentially of hydrazoic acid.
Claim 13
Dependent Claim
15 words
The method of claim 6 wherein the nitrogen-comprising gas consists essentially of NF 3 .
Claim 14
Dependent Claim
13 words
The method of claim 6 wherein the nitrogen-comprising gas consists essentially of ammonia.
Claim 15
Dependent Claim
22 words
The method of claim 6 wherein the exposure to the nitrogen-comprising gas comprises utilizing a plasma to generate an active nitrogen species.
Claim 16
Dependent Claim
28 words
The method of claim 6 wherein the exposing the outer surface of the first layer occurs at a temperature of from about 350° C. to about 900° C.
Claim 17
Dependent Claim
23 words
The method of claim 13 wherein the nitrogen-comprising gas comprises one or more gases selected from a group consisting of hydrazine and ammonia.
Claim 18
Dependent Claim
26 words
The method of claim 14 wherein the nitrogen-comprising gas consists essentially of hydrazine and wherein the temperature is from about 350° C. to about 600° C.
Claim 19
Dependent Claim
26 words
The method of claim 14 wherein the nitrogen-comprising gas consists essentially of ammonia and wherein the temperature is from about 600° C. to about 900° C.
Claim 20
Dependent Claim
12 words
The method of claim 6 wherein the second layer comprises tantalum nitride.
Claim 21
Dependent Claim
14 words
The method of claim 6 wherein the second layer comprises tantalum, oxygen and nitrogen.
Claim 22
Dependent Claim
20 words
The method of claim 6 further comprising forming a metal nitride between the second layer and the second capacitor plate.
Claim 23
Dependent Claim
25 words
The method of claim 19 wherein the second capacitor plate comprises TiN and is formed from one or more organic precursors comprising Ti and N.
Claim 24
Dependent Claim
25 words
The method of claim 19 wherein the second capacitor plate comprises WN and is formed from one or more organic precursors comprising W and N.
Claim 25
Dependent Claim
28 words
The method of claim 6 wherein the second capacitor plate comprises polysilicon and further comprising forming a metal nitride between the second layer and the second capacitor plate.
Claim 26
Dependent Claim
12 words
The method of claim 6 wherein the second capacitor plate comprises polysilicon.
Claim 27
Dependent Claim
11 words
The method of claim 6 wherein the first layer comprises oxygen.
Claim 28
Dependent Claim
17 words
The method of claim 6 wherein the first layer consists essentially of Ta 2 O 5 .
Claim 29
Dependent Claim
17 words
The method of claim 6 wherein the forming the second layer over the first layer is self-limiting.
Claim 30
Independent Claim
98 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas at a temperature of from about 350° C. to about 900° C., and for a time of from about 30 seconds to about 10 minutes, the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 31
Independent Claim
98 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas at a temperature of from about 350° C. to about 900° C., and for a time of from about 30 seconds to about 10 minutes, the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 32
Independent Claim
91 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a tantalum-comprising layer as a dielectric over the first capacitor plate, the tantalum-comprising layer comprising oxygen and being substantially void of carbon; forming a barrier layer over the tantalum-comprising layer; forming a metal layer comprising carbon over the barrier layer; forming a second capacitor plate over the metal layer; and processing the metal layer at a sufficient temperature to diffuse carbon from the metal layer, the barrier layer substantially preventing such carbon from diffusing into the tantalum-comprising layer.
Claim 33
Independent Claim
91 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a tantalum-comprising layer as a dielectric over the first capacitor plate, the tantalum-comprising layer comprising oxygen and being substantially void of carbon; forming a barrier layer over the tantalum-comprising layer; forming a metal layer comprising carbon over the barrier layer; forming a second capacitor plate over the metal layer; and processing the metal layer at a sufficient temperature to diffuse carbon from the metal layer, the barrier layer substantially preventing such carbon from diffusing into the tantalum-comprising layer.
Claim 34
Dependent Claim
12 words
The method of claim 28 wherein the metal layer comprises metal nitride.
Claim 35
Dependent Claim
21 words
The method of claim 29 wherein the metal nitride layer comprises TiN or WN and is formed by chemical vapor deposition.
Claim 36
Dependent Claim
13 words
The method of claim 28 wherein the barrier layer comprises tantalum and nitrogen.
Claim 37
Dependent Claim
12 words
The method of claim 31 wherein the barrier layer comprises tantalum nitride.
Claim 38
Dependent Claim
14 words
The method of claim 31 wherein the barrier layer comprises tantalum, oxygen and nitrogen.
Claim 39
Independent Claim
68 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a tantalum-comprising layer as a dielectric over the first capacitor plate, the tantalum-comprising layer comprising oxygen; forming a barrier layer over the tantalum-comprising layer, the barrier layer comprising less than 10 volume percent of carbon and comprising some of the tantalum of the tantalum-comprising layer; and forming a second capacitor plate over the barrier layer.
Claim 40
Independent Claim
68 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a tantalum-comprising layer as a dielectric over the first capacitor plate, the tantalum-comprising layer comprising oxygen; forming a barrier layer over the tantalum-comprising layer, the barrier layer comprising less than 10 volume percent of carbon and comprising some of the tantalum of the tantalum-comprising layer; and forming a second capacitor plate over the barrier layer.
Claim 41
Dependent Claim
13 words
The method of claim 34 wherein the barrier layer comprises tantalum and nitrogen.
Claim 42
Independent Claim
93 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine, NF 3 and hydrazoic acid; the annealing forming a second layer over the first layer comprising some of the tantalum of the first layer; and forming a second capacitor plate over the second layer.
Claim 43
Independent Claim
93 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine, NF 3 and hydrazoic acid; the annealing forming a second layer over the first layer comprising some of the tantalum of the first layer; and forming a second capacitor plate over the second layer.
Claim 44
Dependent Claim
16 words
The method of claim 36 wherein the nitrogen-comprising gas is within a plasma during the annealing.
Claim 45
Dependent Claim
29 words
The method of claim 36 wherein the nitrogen-comprising gas consists essentially of hydrazine and wherein the annealing comprises a temperature of from about 350° C. to about 600° C.
Claim 46
Dependent Claim
29 words
The method of claim 36 wherein the nitrogen-comprising gas consists essentially of ammonia and wherein the annealing comprises a temperature of from about 600° C. to about 900° C.
Claim 47
Independent Claim
89 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas consisting essentially of hydrazine at a temperature of from about 350° C. to about 600° C., the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 48
Independent Claim
89 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas consisting essentially of hydrazine at a temperature of from about 350° C. to about 600° C., the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 49
Independent Claim
89 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas consisting essentially of ammonia at a temperature of from about 600° C. to about 900° C., the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 50
Independent Claim
89 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and having an exposed outer surface; forming a second layer over the first layer by exposing the outer surface of the first layer to a nitrogen-comprising gas consisting essentially of ammonia at a temperature of from about 600° C. to about 900° C., the second layer comprising tantalum and nitrogen; and forming a second capacitor plate over the second layer.
Claim 51
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer at a temperature of from about 350° C. to about 600° C. in the presence of an ambient comprising a nitrogen-comprising gas consisting essentially of hydrazine, the annealing forming a second layer over the first layer; and forming a second capacitor plate over the second layer.
Claim 52
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer at a temperature of from about 350° C. to about 600° C. in the presence of an ambient comprising a nitrogen-comprising gas consisting essentially of hydrazine, the annealing forming a second layer over the first layer; and forming a second capacitor plate over the second layer.
Claim 53
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer at a temperature of from about 600° C. to about 900° C. in the presence of an ambient comprising a nitrogen-comprising gas consisting essentially of ammonia, the annealing forming a second layer over the first layer; and forming a second capacitor plate over the second layer.
Claim 54
Independent Claim
82 words
A method of forming a capacitor comprising: forming a first capacitor plate; forming a first layer as a dielectric over the first capacitor plate, the first layer comprising tantalum and oxygen; annealing the exposed first layer at a temperature of from about 600° C. to about 900° C. in the presence of an ambient comprising a nitrogen-comprising gas consisting essentially of ammonia, the annealing forming a second layer over the first layer; and forming a second capacitor plate over the second layer.
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