US7243316B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Test masks for lithographic and etch processes
Assignee: Cadence Design Systems Inc
•
Filing: 2002-12-17
•
Granted: 2007-07-10
•
Expires: 2022-12-17
Abstract
Abstract A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.
Inventors
- 👤 David White
- 👤 Taber H. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:09
CPC Classifications
G; G06; G06F; G06F30/00; G06F30/30; G06F30/39; H; H10; H10P; H10P52/00; H10P52/40; H10P52/403; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
99 words
A method comprising fabricating a test wafer having a surface that has topographical variation as a result of underlying pattern dependencies and thickness variations, providing the wafer for characterizing the impact of the topographical variation on the feature dimension variations of features that have been or are to be formed by a lithographic or etch process on the surface and depend on the topographical variation and using a pattern dependent model based in part upon the characterized impact of the topographical variation to predict characteristics of integrated circuits that are to be fabricated by a lithographic or etch process.
Claim 2
Independent Claim
99 words
A method comprising fabricating a test wafer having a surface that has topographical variation as a result of underlying pattern dependencies and thickness variations, providing the wafer for characterizing the impact of the topographical variation on the feature dimension variations of features that have been or are to be formed by a lithographic or etch process on the surface and depend on the topographical variation and using a pattern dependent model based in part upon the characterized impact of the topographical variation to predict characteristics of integrated circuits that are to be fabricated by a lithographic or etch process.
Claim 3
Dependent Claim
25 words
The method of claim 1 in which the lithographic or etch process is based on a mask design that comprises various line and space dimensions.
Claim 4
Dependent Claim
35 words
The method of claim 1 in which the lithographic or etch process is based on a mask design that includes multiple masks for multiple levels, each of the masks including various line and space dimensions.
Claim 5
Dependent Claim
21 words
The method of claim 1 in which the process comprises a preselected lithography or etch tool or lithography or etch recipe.
Claim 6
Dependent Claim
13 words
The method of claim 1 in which the process comprises preselected power settings.
Claim 7
Dependent Claim
13 words
The method of claim 1 in which the process comprises preselected etch times.
Claim 8
Dependent Claim
13 words
The method of claim 1 in which the process comprises preselected polish times.
Claim 9
Dependent Claim
13 words
The method of claim 1 in which the process comprises preselected deposition times.
Claim 10
Dependent Claim
12 words
The method of claim 1 in which the process comprises preselected pressures.
Claim 11
Dependent Claim
27 words
The method of claim 1 also including using an electronics design automation (EDA) tool in conjunction with at least one of the fabricating and the characterizing step.
Claim 12
Dependent Claim
25 words
The method of claim 1 in which at least one of the fabricating and the characterizing step is provided as a service in a network.
Claim 13
Dependent Claim
31 words
The method of claim 1 in which the network comprises an intranet, an extranet, or an internet, and the fabricating and the characterizing steps are provided in response to user requests.
Claim 14
Dependent Claim
13 words
The method of claim 1 in which the process includes a preselected photoresist.
Claim 15
Dependent Claim
22 words
The method of claim 1 in which the topographical variation is produced by at least one of deposition and chemical mechanical polishing.
Claim 16
Dependent Claim
21 words
The method of claim 1 in which the characterizing including measuring the feature dimension variations that depend on the topographical variation.
Claim 17
Dependent Claim
104 words
A machine-implemented product comprising a machine-executable medium bearing machine-executable instructions to enable a machine to execute a process, the process comprising: characterizing the impact that topographical variation of a surface of a test wafer that results from underlying pattern dependencies and thickness variations has on the feature dimension variations of features that have been formed by a lithographic or etch process on the surface and depend on the topographical variation; and using a pattern dependent model based in part upon the characterized impact of the topographical variation to predict characteristics of integrated circuits that are to be fabricated by a lithographic or etch process.
Claim 18
Dependent Claim
104 words
A machine-implemented product comprising a machine-executable medium bearing machine-executable instructions to enable a machine to execute a process, the process comprising: characterizing the impact that topographical variation of a surface of a test wafer that results from underlying pattern dependencies and thickness variations has on the feature dimension variations of features that have been formed by a lithographic or etch process on the surface and depend on the topographical variation; and using a pattern dependent model based in part upon the characterized impact of the topographical variation to predict characteristics of integrated circuits that are to be fabricated by a lithographic or etch process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2010-07-09 | 2011-01-08 | 2011-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2014-07-09 | 2015-01-08 | 2015-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2018-07-09 | 2019-01-08 | 2019-07-10 | $7700.00 | Window Closed / Lapsed |