US5798298A
Expired / Lapsed
US
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Method of automatically generating dummy metals for multilevel interconnection
Assignee: United Microelectronics Corp
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Filing: 1996-02-09
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Granted: 1998-08-25
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Expires: 2016-02-09
Abstract
Abstract A method of automatically generating dummy metals for multilevel interconnection makes use of a quantum array pattern accompanying an operating pattern to from a metal pattern. The method comprises the combination selected from intersection (AND), union (OR), oversizing, downsizing, or incorporation operation through computer-aided design (CAD). Therefore, the application of the metal pattern to a process for fabricating a multimetal structure can acquire full planarization between two metal layers because of the arrangement that several dummy metals are positioned among the metal lines to diminish the spacing which exceeds the planarization limit. Also, the dummy metals are shaped in blocks thereby preventing the loading effect during etching and decreasing the parasitic capacitance therebetween.
Inventors
- 👤 Ming-Tzong Yang
- 👤 Hong-Tsz Pan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; H10W20/071; H10W20/092; Y; Y10; Y10S; Y10S438/00; Y10S438/926
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
177 words
A method of forming a metal pattern for use in an integrated circuit device fabrication process, the metal pattern including metal lines having an length and width, the method comprising: providing a first pattern having first lines corresponding to the metal lines, the first lines having a length and width larger by a first distance b than the length and width of corresponding metal lines; providing an inverse of the first pattern; providing a block array pattern having a plurality of dummy lines, each with a length f, a width d, and a spacing e, between adjacent dummy lines; providing a second pattern of second lines having a length and width by ANDing the block array pattern and the inverse of the first pattern; providing a third pattern having third lines corresponding to the second lines of the second pattern, the third lines having a height and width larger by a second distance c than the length and width of corresponding second lines; and forming the metal pattern by ORing the metal lines with the third pattern.
Claim 2
Independent Claim
177 words
A method of forming a metal pattern for use in an integrated circuit device fabrication process, the metal pattern including metal lines having an length and width, the method comprising: providing a first pattern having first lines corresponding to the metal lines, the first lines having a length and width larger by a first distance b than the length and width of corresponding metal lines; providing an inverse of the first pattern; providing a block array pattern having a plurality of dummy lines, each with a length f, a width d, and a spacing e, between adjacent dummy lines; providing a second pattern of second lines having a length and width by ANDing the block array pattern and the inverse of the first pattern; providing a third pattern having third lines corresponding to the second lines of the second pattern, the third lines having a height and width larger by a second distance c than the length and width of corresponding second lines; and forming the metal pattern by ORing the metal lines with the third pattern.
Claim 3
Dependent Claim
44 words
The method of claim 12, wherein the integration circuit device fabrication process has a planarization limit g and a resolution limit h and the values of b, c, d, e, f, g, and h conform to the following relationships: g>b+e-c; g>e-2c; d+2c>h; and f+2c>h.
Claim 4
Dependent Claim
131 words
The method of automatically generating dummy metals for multilevel interconnection as in claim 1 applied to a fabrication process for multimetal interconnection, wherein said process comprises: providing a dielectric layer; forming a first metal layer on said dielectric layer; etching and patterning said first metal layer into a plurality metal lines and dummy metals there among according to said metal pattern; forming a first insulating layer overlying said metal lines, dummy metals, and dielectric layer; forming an SOG (spin-on glass) layer overlying said first insulating layer; forming a second insulating layer on said SOG layer; etching said second insulating layer, SOG layer and first insulating layer to form openings exposing a portion of said metal lines; and forming a second metal layer connecting to said exposed metal lines via said opening.
Claim 5
Dependent Claim
28 words
The method of automatically generating dummy metals for multilevel interconnection as in claim 3, wherein said first insulating layer is silicon oxide formed by PECVD(plasma-enhanced chemical vapor deposition).
Claim 6
Dependent Claim
28 words
The method of automatically generating dummy metals for multilevel interconnection as in claim 3, wherein said second insulating layer is silicon oxide formed by PECVD(plasma-enhanced chemical vapor deposition).
Claim 7
Dependent Claim
25 words
The method of automatically generating dummy metals for multilevel interconnection as in claim 3, wherein said etching procedure sequentially utilizes wet and dry etching steps.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-24 | 2002-02-23 | 2002-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-24 | 2006-02-23 | 2006-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-24 | 2010-02-23 | 2010-08-25 | $7700.00 | Window Closed / Lapsed |