US6327555B1
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Semiconductor simulation method
Assignee: Sony Corp
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Filing: 1999-04-27
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Granted: 2001-12-04
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Expires: 2019-04-27
Abstract
Abstract Impurity profiles Pi 1 and Ps 1 are determined for the same conditions by a reference acquiring means and a simulation capable of producing a result faster than the reference acquiring means, respectively. Errors between the impurity profile Pi 1 determined by the reference acquiring means and the impurity profile Ps 1 determined by the simulation are determined. An impurity profile Psx is calculated for another kind of conditions by the simulation, and a new impurity profile Psx′ is calculated by correcting the impurity profile Psx so as to reflect the errors.
Inventors
- 👤 Shunkichi Shimizu
- 👤 Mikio Mukai
- 👤 Yasutoshi Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:57
CPC Classifications
H; H10; H10P; H10P74/00; G; G06; G06F; G06F30/00; G06F30/20; G06F30/23
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
95 words
A semiconductor simulation method comprising the steps of: determining first and second impurity profiles for the same conditions by an inverse modeling method and a calculating means capable of producing a result faster than the reference acquiring means, respectively; determining errors between the first impurity profile determined by the reference acquiring means and the second impurity profile determined by the calculating means; and calculating a third impurity profile for another kind of conditions by the calculating means, and calculating a fourth impurity profile by correcting the third impurity profile so as to reflect the errors.
Claim 2
Dependent Claim
95 words
A semiconductor simulation method comprising the steps of: determining first and second impurity profiles for the same conditions by an inverse modeling method and a calculating means capable of producing a result faster than the reference acquiring means, respectively; determining errors between the first impurity profile determined by the reference acquiring means and the second impurity profile determined by the calculating means; and calculating a third impurity profile for another kind of conditions by the calculating means, and calculating a fourth impurity profile by correcting the third impurity profile so as to reflect the errors.
Claim 3
Dependent Claim
132 words
A semiconductor simulation method comprising the steps of: determining first and second values of a physical quantative impurity profile of a prescribed portion for the same conditions by a reverse modeling method and a calculating means capable of producing a result faster than the reference acquiring means, respectively; determining an error between the first physical quantative impurity profile data value determined by the reference acquiring means and the second physical quantative impurity profile data value determined by the calculating means; and calculating a third value of the physical quantative impurity profile data of the prescribed portion for another kind of conditions by the calculating means, and calculating a fourth value of the physical quantative impurity profile data of the prescribed portion by correcting the third value so as to reflect the error.
Claim 4
Dependent Claim
132 words
A semiconductor simulation method comprising the steps of: determining first and second values of a physical quantative impurity profile of a prescribed portion for the same conditions by a reverse modeling method and a calculating means capable of producing a result faster than the reference acquiring means, respectively; determining an error between the first physical quantative impurity profile data value determined by the reference acquiring means and the second physical quantative impurity profile data value determined by the calculating means; and calculating a third value of the physical quantative impurity profile data of the prescribed portion for another kind of conditions by the calculating means, and calculating a fourth value of the physical quantative impurity profile data of the prescribed portion by correcting the third value so as to reflect the error.
Claim 5
Dependent Claim
107 words
A semiconductor device simulation method comprising the steps of: setting initial process conditions; deriving an initial impurity profile based on initial process conditions; setting an initial device characteristic corresponding to the initial process conditions; deriving a modified impurity profile that satisfies the initial device characteristic by performing impurity profile modification starting from the initial impurity profile; deriving a difference impurity profile by calculating differences between the modified impurity profile and the initial impurity profile; setting desired process conditions; deriving an impurity profile by a process simulation based on the desired process conditions; and correcting the impurity profile by adding the difference impurity profile to the impurity profile.
Claim 6
Dependent Claim
107 words
A semiconductor device simulation method comprising the steps of: setting initial process conditions; deriving an initial impurity profile based on initial process conditions; setting an initial device characteristic corresponding to the initial process conditions; deriving a modified impurity profile that satisfies the initial device characteristic by performing impurity profile modification starting from the initial impurity profile; deriving a difference impurity profile by calculating differences between the modified impurity profile and the initial impurity profile; setting desired process conditions; deriving an impurity profile by a process simulation based on the desired process conditions; and correcting the impurity profile by adding the difference impurity profile to the impurity profile.
Claim 7
Dependent Claim
29 words
The semiconductor device simulation method according to claim 3 , further comprising the step of deriving a device characteristic by a device simulation based on the difference-impurity-profile-added impurity profile.
Claim 8
Dependent Claim
27 words
The semiconductor device simulation method according to claim 3 , wherein the initial impurity profile is derived based on the initial process conditions by the process simulation.
Claim 9
Dependent Claim
28 words
The semiconductor device simulation method according to claim 3 , wherein the initial impurity profile is derived based on the initial process conditions by using an analytic function.
Claim 10
Dependent Claim
28 words
The semiconductor device simulation method according to claim 3 , wherein the initial impurity profile is derived based on the initial process conditions by using actual measurement values.
Claim 11
Dependent Claim
28 words
The semiconductor device simulation method according to claim 3 , wherein the initial device characteristic corresponding to the initial process conditions is set by using actual measurement values.
Claim 12
Dependent Claim
28 words
The semiconductor device simulation method according to claim 3 , wherein the initial device characteristic corresponding to the initial process conditions is set by using values determined analytically.
Claim 13
Dependent Claim
27 words
The semiconductor device simulation method according to claim 3 , wherein the initial device characteristic corresponding to the initial process conditions is set by using target values.
Claim 14
Dependent Claim
32 words
The semiconductor device simulation method according to claim 3 , wherein the initial device characteristic corresponding to the initial process conditions is set by using a device characteristic obtained by a simulation.
Claim 15
Dependent Claim
129 words
A semiconductor device simulation method comprising the steps of: setting initial process conditions; deriving an initial impurity profile based on the initial process conditions; setting an initial device characteristic corresponding to the initial process conditions; deriving a modified impurity profile that satisfies the initial device characteristic by performing impurity profile modification starting from the initial impurity profile; deriving correction values for the initial process conditions by deriving process conditions that satisfy the modified impurity profile by a process simulation in which items of the initial process conditions are used as variables; setting desired process conditions; correcting the desired process conditions by using the correction values for the initial process conditions; and deriving an impurity profile by the process simulation based on the corrected conditions to the desired process conditions.
Claim 16
Dependent Claim
129 words
A semiconductor device simulation method comprising the steps of: setting initial process conditions; deriving an initial impurity profile based on the initial process conditions; setting an initial device characteristic corresponding to the initial process conditions; deriving a modified impurity profile that satisfies the initial device characteristic by performing impurity profile modification starting from the initial impurity profile; deriving correction values for the initial process conditions by deriving process conditions that satisfy the modified impurity profile by a process simulation in which items of the initial process conditions are used as variables; setting desired process conditions; correcting the desired process conditions by using the correction values for the initial process conditions; and deriving an impurity profile by the process simulation based on the corrected conditions to the desired process conditions.
Claim 17
Dependent Claim
33 words
The semiconductor device simulation method according to claim 12 , further comprising the step of deriving a device characteristic by a device simulation based on the corrected conditions to the desired impurity profile.
Claim 18
Dependent Claim
27 words
The semiconductor device simulation method according to claim 12 , wherein the initial impurity profile is derived based on the initial process conditions by the process simulation.
Claim 19
Dependent Claim
28 words
The semiconductor device simulation method according to claim 12 , wherein the initial impurity profile is derived based on the initial process conditions by using an analytic function.
Claim 20
Dependent Claim
28 words
The semiconductor device simulation method according to claim 12 , wherein the initial impurity profile is derived based on the initial process conditions by using actual measurement values.
Claim 21
Dependent Claim
28 words
The semiconductor device simulation method according to claim 12 , wherein the initial device characteristic corresponding to the initial process conditions is set by using actual measurement values.
Claim 22
Dependent Claim
28 words
The semiconductor device simulation method according to claim 12 , wherein the initial device characteristic corresponding to the initial process conditions is set by using values determined analytically.
Claim 23
Dependent Claim
27 words
The semiconductor device simulation method according to claim 12 , wherein the initial device characteristic corresponding to the initial process conditions is set by using target values.
Claim 24
Dependent Claim
32 words
The semiconductor device simulation method according to claim 12 , wherein the initial device characteristic corresponding to the initial process conditions is set by using a device characteristic obtained by a simulation.
References Cited (Backward Citations)
US5751607A
Cited
US5859784A
Cited
US5966312A
Cited
US5926402A
Cited
US5983011A
Cited
US5886909A
Cited
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