US6328872B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for plating and polishing a semiconductor substrate
Assignee: ASM NU TOO Inc
•
Filing: 1999-04-03
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Granted: 2001-12-11
•
Expires: 2019-04-03
Abstract
Abstract The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
Inventors
- 👤 Homayoun Talieh
- 👤 Cyprian Emeka Uzoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:40
CPC Classifications
H; H10; H10P; H10P52/00; B; B24; B24B; B24B37/00; B24B37/11; B24B37/12; B24B37/16; C; C25; C25D; C25D17/00; C25D17/001; C25D17/10; C25D17/14; C25D5/00; C25D5/04; C25D5/06; C25D5/22; C25D5/60; C25D5/615; C25D5/617; C25F; C25F7/00; C25D7/00; C25D7/12; C25D7/123; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
64 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; wherein the plating device comprises a pad mounted on a cylindrical anode; a second chamber having a polishing device for polishing the surface of the workpiece; and a partition separating the first chamber from the second chamber.
Claim 2
Independent Claim
64 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; wherein the plating device comprises a pad mounted on a cylindrical anode; a second chamber having a polishing device for polishing the surface of the workpiece; and a partition separating the first chamber from the second chamber.
Claim 3
Dependent Claim
19 words
The apparatus according to claim 1 , wherein the cylindrical anode is adapted to rotate about a first axis.
Claim 4
Dependent Claim
16 words
The apparatus according to claim 2 wherein the first axis is parallel to the semiconductor workpiece.
Claim 5
Dependent Claim
18 words
The apparatus according to claim 3 wherein the polishing device comprises a pad mounted on a cylindrical anode.
Claim 6
Dependent Claim
19 words
The apparatus according to claim 4 , wherein the cylindrical anode is adapted to rotate about the first axis.
Claim 7
Dependent Claim
39 words
The apparatus according to claim 5 further including a workpiece support adapted to support the workpiece during plating and polishing, wherein the workpiece support is adapted to rotate about a second axis that is perpendicular to the first axis.
Claim 8
Dependent Claim
16 words
The apparatus according to claim 3 wherein the polishing device comprises a chemical mechanical polishing device.
Claim 9
Dependent Claim
21 words
The apparatus according to claim 7 , wherein the chemical mechanical polishing device comprises a pad mounted on a cylindrical roller.
Claim 10
Dependent Claim
19 words
The apparatus according to claim 8 , wherein the cylindrical roller is adapted to rotate about the first axis.
Claim 11
Dependent Claim
39 words
The apparatus according to claim 9 further including a workpiece support adapted to support the workpiece during plating and polishing, wherein the workpiece support is adapted to rotate about a second axis that is perpendicular to the first axis.
Claim 12
Dependent Claim
20 words
The apparatus according to claim 2 wherein an electrolyte solution is disposed in the first and second chambers during operation.
Claim 13
Dependent Claim
18 words
The apparatus according to claim 1 wherein the polishing device comprises a pad mounted on a cylindrical anode.
Claim 14
Dependent Claim
20 words
The apparatus according to claim 12 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 15
Dependent Claim
16 words
The apparatus according to claim 1 wherein the polishing device comprises a chemical mechanical polishing device.
Claim 16
Dependent Claim
20 words
The apparatus according to claim 14 wherein the chemical mechanical polishing device comprises a pad mounted on a cylindrical roller.
Claim 17
Dependent Claim
20 words
The apparatus according to claim 14 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 18
Dependent Claim
20 words
The apparatus according to claim 1 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 19
Dependent Claim
26 words
The apparatus according to claim 17 wherein the workpiece support is adapted to rotate so that a portion of the workpiece is alternately plated and polished.
Claim 20
Independent Claim
71 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; wherein the plating device comprises an anode plate mounted in proximity to a bottom side of the first chamber; a second chamber having a polishing device for polishing the surface of the workpiece; and a partition separating the first chamber from the second chamber.
Claim 21
Independent Claim
71 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; wherein the plating device comprises an anode plate mounted in proximity to a bottom side of the first chamber; a second chamber having a polishing device for polishing the surface of the workpiece; and a partition separating the first chamber from the second chamber.
Claim 22
Dependent Claim
18 words
The apparatus according to claim 19 wherein the polishing device comprises a pad mounted on a cylindrical anode.
Claim 23
Dependent Claim
20 words
The apparatus according to claim 20 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 24
Dependent Claim
26 words
The apparatus according to claim 21 wherein the workpiece support is adapted to rotate so that a portion of the workpiece is alternately plated and polished.
Claim 25
Dependent Claim
16 words
The apparatus according to claim 19 wherein the polishing device comprises a chemical mechanical polishing device.
Claim 26
Dependent Claim
20 words
The apparatus according to claim 23 wherein the chemical mechanical polishing device comprises a pad mounted on a cylindrical roller.
Claim 27
Dependent Claim
20 words
The apparatus according to claim 23 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 28
Dependent Claim
20 words
The apparatus according to claim 19 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 29
Dependent Claim
26 words
The apparatus according to claim 26 wherein the workpiece support is adapted to rotate so that a portion of the workpiece is alternately plated and polished.
Claim 30
Independent Claim
64 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece, wherein the polishing device comprises a pad mounted on a cylindrical anode; and a partition separating the first chamber from the second chamber.
Claim 31
Independent Claim
64 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece, wherein the polishing device comprises a pad mounted on a cylindrical anode; and a partition separating the first chamber from the second chamber.
Claim 32
Dependent Claim
19 words
The apparatus according to claim 28 , wherein the cylindrical anode is adapted to rotate about a first axis.
Claim 33
Dependent Claim
20 words
The apparatus according to claim 28 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 34
Dependent Claim
26 words
The apparatus according to claim 30 wherein the workpiece support is adapted to rotate so that a portion of the workpiece is alternately plated and polished.
Claim 35
Independent Claim
62 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece, wherein the polishing device comprises a chemical mechanical polishing device; and a partition separating the first chamber from the second chamber.
Claim 36
Independent Claim
62 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece, wherein the polishing device comprises a chemical mechanical polishing device; and a partition separating the first chamber from the second chamber.
Claim 37
Dependent Claim
21 words
The apparatus according to claim 32 , wherein the chemical mechanical polishing device comprises a pad mounted on a cylindrical roller.
Claim 38
Dependent Claim
19 words
The apparatus according to claim 33 , wherein the cylindrical roller is adapted to rotate about a first axis.
Claim 39
Dependent Claim
20 words
The apparatus according to claim 32 further including a workpiece support adapted to support the workpiece during plating and polishing.
Claim 40
Independent Claim
84 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece; a partition separating the first chamber from the second chamber; and a workpiece support adapted to support the workpiece during plating and polishing, wherein the workpiece support is adapted to rotate about a second axis and adapted to move from side to side.
Claim 41
Independent Claim
84 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece; a partition separating the first chamber from the second chamber; and a workpiece support adapted to support the workpiece during plating and polishing, wherein the workpiece support is adapted to rotate about a second axis and adapted to move from side to side.
Claim 42
Independent Claim
100 words
A method of plating and removal of material from a surface of a semiconductor workpiece, the method comprising the steps of: plating a conductive material to the surface of the workpiece using an electrolyte solution disposed on the surface of the workpiece, the workpiece being disposed in proximity to an anode; and removing conductive material from the surface of the workpiece during at least certain of the times when the plating is not being performed, wherein one surface portion of the workpiece is repetitively plated while another surface portion of the semiconductor workpiece repetitively has the conductive material removed therefrom.
Claim 43
Independent Claim
100 words
A method of plating and removal of material from a surface of a semiconductor workpiece, the method comprising the steps of: plating a conductive material to the surface of the workpiece using an electrolyte solution disposed on the surface of the workpiece, the workpiece being disposed in proximity to an anode; and removing conductive material from the surface of the workpiece during at least certain of the times when the plating is not being performed, wherein one surface portion of the workpiece is repetitively plated while another surface portion of the semiconductor workpiece repetitively has the conductive material removed therefrom.
Claim 44
Dependent Claim
27 words
A method according to claim 37 , wherein the plating step is performed in a first chamber and the polishing step is performed in a second chamber.
Claim 45
Dependent Claim
20 words
A method according to claim 38 , wherein the first chamber and the second chamber are separated by a partition.
Claim 46
Dependent Claim
25 words
A method according to claim 37 , wherein the plating step is performed using one of a brush plating and an electro chemical mechanical deposition.
Claim 47
Dependent Claim
23 words
A method according to claim 37 , wherein the polishing step is performed using one of an electropolishing and a chemical mechanical polishing.
Claim 48
Dependent Claim
17 words
A method according to claim 37 , wherein the plating step is performed before the polishing step.
Claim 49
Dependent Claim
23 words
A method according to claim 37 , wherein the workpiece comprises one of a wafer, a flat panel, and a magnetic film head.
Claim 50
Independent Claim
77 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece; a partition separating the first chamber from the second chamber; and a rotatable workpiece support that allows for alternate plating and polishing of a portion of the workpiece by the first chamber and second chamber, respectively.
Claim 51
Independent Claim
77 words
An apparatus for plating and polishing a surface of a semiconductor workpiece, comprising: a first chamber having a plating device for plating the surface of the workpiece; a second chamber having a polishing device for polishing the surface of the workpiece; a partition separating the first chamber from the second chamber; and a rotatable workpiece support that allows for alternate plating and polishing of a portion of the workpiece by the first chamber and second chamber, respectively.
Claim 52
Dependent Claim
19 words
The apparatus according to claim 44 , wherein the plating device comprises a pad mounted on a cylindrical anode.
Claim 53
Dependent Claim
19 words
The apparatus according to claim 45 , wherein the cylindrical anode is adapted to rotate about a first axis.
Claim 54
Dependent Claim
26 words
The apparatus according to claim 44 , wherein the plating device comprises an anode plate mounted in proximity to a bottom side of the first chamber.
Claim 55
Dependent Claim
19 words
The apparatus according to claim 44 , wherein the polishing device comprises a pad mounted on a cylindrical anode.
Claim 56
Dependent Claim
19 words
The apparatus according to claim 48 , wherein the cylindrical anode is adapted to rotate about a first axis.
Claim 57
Dependent Claim
20 words
The apparatus according to claim 44 wherein an electrolyte solution is disposed in the first and second chambers during operation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |