US7174520B2
Expired / Lapsed
US
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Characterization and verification for integrated circuit designs
Assignee: Cadence Design Systems Inc
•
Filing: 2002-12-17
•
Granted: 2007-02-06
•
Expires: 2022-12-17
Abstract
Abstract Variations are characterized in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design by a process that produces topographical variation in the integrated circuit, the variations in feature dimension being caused by the topographical variations. The process includes lithography or etch. Predicted characteristics are verified to conform to the design, the characteristics including feature dimensions or electrical characteristics. A process is selected for use in fabricating the integrated circuit based on the relative predicted variations. Chip-level features of a design of an integrated circuit are verified for manufacture within focus limitations of a lithographic tool. Whether a design of a level of an integrated circuit can be lithographically imaged in accordance with the design is predicted, and if it cannot be, the design or processing parameters are adjusted so that it can be.
Inventors
- 👤 David White
- 👤 Taber H. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:19
CPC Classifications
G; G06; G06F; G06F30/00; G06F30/30; G06F30/39; H; H10; H10P; H10P52/00; H10P52/40; H10P52/403; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
110 words
A method comprising: characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of characterizing the variations comprises analysis of impacts of interactions between the first process and the second process.
Claim 2
Independent Claim
110 words
A method comprising: characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of characterizing the variations comprises analysis of impacts of interactions between the first process and the second process.
Claim 3
Dependent Claim
18 words
The method of claim 1 in which the variations that are characterized are for a damascene process flow.
Claim 4
Dependent Claim
25 words
The method of claim 1 in which the variations that are characterized corresponds to line width variations based upon thickness variation on a wafer surface.
Claim 5
Dependent Claim
15 words
The method of claim 1 in which the etching process comprises a plasma etching process.
Claim 6
Dependent Claim
17 words
The method of claim 1 in which the characterizing is provided as a service in a network.
Claim 7
Dependent Claim
27 words
The method of claim 5 in which the network comprises an intranet, an extranet, or an internet, and the characterizing is provided in response to user requests.
Claim 8
Dependent Claim
19 words
The method of claim 1 further including using an electronics design automation (EDA) tool in conjunction with the characterizing.
Claim 9
Independent Claim
123 words
A method comprising: using a pattern-dependent model of topographical variation to predict feature dimension variations or electrical characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes that produce topological variation, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting feature dimension variations or electrical characteristics comprises analysis of impacts of interactions between the first process and the second process, and verifying that the predicted feature dimensions or electrical characteristics conform to the design.
Claim 10
Independent Claim
123 words
A method comprising: using a pattern-dependent model of topographical variation to predict feature dimension variations or electrical characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes that produce topological variation, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting feature dimension variations or electrical characteristics comprises analysis of impacts of interactions between the first process and the second process, and verifying that the predicted feature dimensions or electrical characteristics conform to the design.
Claim 11
Independent Claim
113 words
A method comprising: using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, and verifying that the predicted characteristics conform to the design, the characteristics including feature dimensions or electrical characteristics.
Claim 12
Independent Claim
113 words
A method comprising: using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, and verifying that the predicted characteristics conform to the design, the characteristics including feature dimensions or electrical characteristics.
Claim 13
Dependent Claim
25 words
The method of claim 9 in which the set of processes comprises plasma etch and the characteristics include sidewall angle, trench width, or trench depth.
Claim 14
Dependent Claim
12 words
The method of claim 9 in which the characteristics include feature dimensions.
Claim 15
Dependent Claim
12 words
The method of claim 9 in which the characteristics include electrical characteristics.
Claim 16
Dependent Claim
15 words
The method of claim 9 in which the variations are for a damascene process flow.
Claim 17
Dependent Claim
22 words
The method of claim 9 in which the variations corresponds to line width variations based upon thickness variation on a wafer surface.
Claim 18
Dependent Claim
12 words
The method of claim 9 in which the characteristics comprise feature width.
Claim 19
Dependent Claim
17 words
The method of claim 9 in which the characteristics are associated with all of the integrated circuit.
Claim 20
Dependent Claim
19 words
The method of claim 9 in which the characteristics are associated with less than all of the integrated circuit.
Claim 21
Dependent Claim
17 words
The method of claim 9 in which the verifying of the predicted characteristics includes verifying feature widths.
Claim 22
Dependent Claim
19 words
The method of claim 9 in which the verifying of the predicted characteristics also includes verifying the topographical variation.
Claim 23
Dependent Claim
25 words
The method of claim 9 in which the verifying of the predicted characteristics includes verifying physical and electrical parameters that result from feature width variation.
Claim 24
Dependent Claim
23 words
The method of claim 9 in which the prediction or verification is done in response to a request received electronically from a network.
Claim 25
Dependent Claim
17 words
The method of claim 9 in which the prediction or verification is provided as a web service.
Claim 26
Dependent Claim
34 words
The method of claim 9 in which using a pattern-dependent model of topographical variation to predict characteristics of the integrated circuit includes using the model with respect to at least two different process features.
Claim 27
Dependent Claim
13 words
The method of claim 23 in which the process features comprise process recipes.
Claim 28
Dependent Claim
17 words
The method of claim 24 in which the process recipes include different tool settings for a tool.
Claim 29
Dependent Claim
13 words
The method of claim 24 in which the process recipes include power settings.
Claim 30
Dependent Claim
13 words
The method of claim 24 in which the process recipes include etch times.
Claim 31
Dependent Claim
13 words
The method of claim 24 in which the process recipes include polish times.
Claim 32
Dependent Claim
13 words
The method of claim 24 in which the process recipes include deposition times.
Claim 33
Dependent Claim
12 words
The method of claim 24 in which the process recipes include pressures.
Claim 34
Dependent Claim
12 words
The method of claim 23 in which the process features comprise tools.
Claim 35
Dependent Claim
16 words
The method of claim 31 in which the tools comprise tools made by two different vendors.
Claim 36
Dependent Claim
12 words
The method of claim 23 in which the process features comprise consumables.
Claim 37
Dependent Claim
14 words
The method of claim 33 in which the consumables comprise photoresists or mask types.
Claim 38
Dependent Claim
17 words
The method of claim 23 in further including choosing among the process features based on the prediction.
Claim 39
Independent Claim
87 words
A method comprising: using a pattern-dependent model to predict variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design by a set of processes that include a fabrication process that will impart topographical variation to the integrated circuits, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting variations comprises analysis of impacts of interactions between the fabrication process and the second process.
Claim 40
Independent Claim
87 words
A method comprising: using a pattern-dependent model to predict variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design by a set of processes that include a fabrication process that will impart topographical variation to the integrated circuits, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of predicting variations comprises analysis of impacts of interactions between the fabrication process and the second process.
Claim 41
Dependent Claim
15 words
The method of claim 36 in which the variations are for a damascene process flow.
Claim 42
Dependent Claim
25 words
The method of claim 36 in which the variations that are characterized corresponds to line dimension variations based upon thickness variation on a wafer surface.
Claim 43
Dependent Claim
15 words
The method of claim 38 in which the line dimension variations comprise line width variations.
Claim 44
Dependent Claim
17 words
The method of claim 36 in which the predicting is provided as a service in a network.
Claim 45
Dependent Claim
27 words
The method of claim 40 in which the network comprises an intranet, an extranet, or an internet, and the predicting is provided in response to user requests.
Claim 46
Dependent Claim
19 words
The method of claim 36 also including using an electronics design automation (EDA) tool in conjunction with the predicting.
Claim 47
Independent Claim
82 words
A method comprising: using a pattern-dependent model to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a process that includes (a) a fabrication process that will impart topographical variation to the integrated circuit and (b) a lithography or etch process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the fabrication process and the lithographic or etch process, and certifying that the predicted characteristics meet specifications of the design.
Claim 48
Independent Claim
82 words
A method comprising: using a pattern-dependent model to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a process that includes (a) a fabrication process that will impart topographical variation to the integrated circuit and (b) a lithography or etch process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the fabrication process and the lithographic or etch process, and certifying that the predicted characteristics meet specifications of the design.
Claim 49
Independent Claim
95 words
A method comprising: using a pattern-dependent model to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a process that includes (a) a fabrication process that will impart topographical variation to the integrated circuit and (b) a subsequent lithography or etch process wherein the act of predicting characteristics comprises analysis of impacts of interactions between the fabrication process and the lithographic or etch process, and certifying that the predicted characteristics resulting from the process up to the lithography or etch process will meet specifications of the design.
Claim 50
Independent Claim
95 words
A method comprising: using a pattern-dependent model to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a process that includes (a) a fabrication process that will impart topographical variation to the integrated circuit and (b) a subsequent lithography or etch process wherein the act of predicting characteristics comprises analysis of impacts of interactions between the fabrication process and the lithographic or etch process, and certifying that the predicted characteristics resulting from the process up to the lithography or etch process will meet specifications of the design.
Claim 51
Dependent Claim
127 words
A computer program product comprising a tangible computer usable medium having executable code to execute a process, the process comprising: characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of characterizing the variations comprises analysis of impacts of interactions between the first process and the second process.
Claim 52
Dependent Claim
127 words
A computer program product comprising a tangible computer usable medium having executable code to execute a process, the process comprising: characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the act of characterizing the variations comprises analysis of impacts of interactions between the first process and the second process.
Claim 53
Dependent Claim
20 words
The computer program product of claim 45 in which the variations that are characterized are for a damascene process flow.
Claim 54
Dependent Claim
27 words
The computer program product of claim 45 in which the variations that are characterized corresponds to line width variations based upon thickness variation on a wafer surface.
Claim 55
Dependent Claim
17 words
The computer program product of claim 45 in which the etching process comprises a plasma etching process.
Claim 56
Independent Claim
114 words
A system comprising: means for characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the means for characterizing the variations comprises means for analysis of impacts of interactions between the first process and the second process.
Claim 57
Independent Claim
114 words
A system comprising: means for characterizing variations in feature dimensions of an integrated circuit that is to be fabricated in accordance with a design, by a set of processes that produce topographical variations in the integrated circuit, the variations in feature dimension being caused by the topographical variations, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process; and wherein the means for characterizing the variations comprises means for analysis of impacts of interactions between the first process and the second process.
Claim 58
Dependent Claim
18 words
The system of claim 49 in which the variations that are characterized are for a damascene process flow.
Claim 59
Dependent Claim
25 words
The system of claim 49 in which the variations that are characterized corresponds to line width variations based upon thickness variation on a wafer surface.
Claim 60
Dependent Claim
15 words
The system of claim 49 in which the etching process comprises a plasma etching process.
Claim 61
Dependent Claim
129 words
A computer program product comprising a tangible computer usable medium having executable code to execute a process, the process comprising: using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, verifying that the predicted characteristics conform to the design, and the characteristics including feature dimensions or electrical characteristics.
Claim 62
Dependent Claim
129 words
A computer program product comprising a tangible computer usable medium having executable code to execute a process, the process comprising: using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, verifying that the predicted characteristics conform to the design, and the characteristics including feature dimensions or electrical characteristics.
Claim 63
Dependent Claim
27 words
The computer program product of claim 53 in which the set of processes comprises plasma etch and the characteristics include sidewall angle, trench width, or trench depth.
Claim 64
Dependent Claim
14 words
The computer program product of claim 53 in which the characteristics include feature dimensions.
Claim 65
Dependent Claim
14 words
The computer program product of claim 53 in which the characteristics include electrical characteristics.
Claim 66
Dependent Claim
14 words
The computer program product of claim 53 in which the characteristics comprise feature width.
Claim 67
Dependent Claim
19 words
The computer program product of claim 53 in which the verifying of the predicted characteristics includes verifying feature widths.
Claim 68
Dependent Claim
21 words
The computer program product of claim 53 in which the verifying of the predicted characteristics also includes verifying the topographical variation.
Claim 69
Dependent Claim
27 words
The computer program product of claim 53 in which the verifying of the predicted characteristics includes verifying physical and electrical parameters that result from feature width variation.
Claim 70
Independent Claim
116 words
A system comprising: means for using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, means for verifying that the predicted characteristics conform to the design, and the characteristics including feature dimensions or electrical characteristics.
Claim 71
Independent Claim
116 words
A system comprising: means for using a pattern-dependent model of topographical variation to predict characteristics of an integrated circuit that is to be fabricated in accordance with a design by a set of processes, the set of processes comprising at least a first process, wherein the first process comprising electroplated copper deposition or chemical mechanical polishing, the set of processes further comprising at least a second process, the second process comprising a lithographic or etching process, wherein the act of predicting characteristics comprises analysis of impacts of interactions between the first process and the second process, means for verifying that the predicted characteristics conform to the design, and the characteristics including feature dimensions or electrical characteristics.
Claim 72
Dependent Claim
25 words
The system of claim 61 in which the set of processes comprises plasma etch and the characteristics include sidewall angle, trench width, or trench depth.
Claim 73
Dependent Claim
12 words
The system of claim 61 in which the characteristics include feature dimensions.
Claim 74
Dependent Claim
12 words
The system of claim 61 in which the characteristics include electrical characteristics.
Claim 75
Dependent Claim
12 words
The system of claim 61 in which the characteristics comprise feature width.
Claim 76
Dependent Claim
21 words
The system of claim 61 in which the means for verifying of the predicted characteristics includes means for verifying feature widths.
Claim 77
Dependent Claim
23 words
The system of claim 61 in which the means for verifying of the predicted characteristics also includes means for verifying the topographical variation.
Claim 78
Dependent Claim
29 words
The system of claim 61 in which the means for verifying of the predicted characteristics includes means for verifying physical and electrical parameters that result from feature width variation.
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