Patent US6524929B1 successfully refreshed from Google Patents.
US6524929B1
Expired / Lapsed
US
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Method for shallow trench isolation using passivation material for trench bottom liner
Assignee: Advanced Micro Devices Inc
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Filing: 2001-02-26
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Granted: 2003-02-25
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Expires: 2021-02-26
Abstract
Abstract A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate; forming an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator in a lower portion of the isolation trench; and filling the isolation trench above the passivating insulator with a trench isolation material.
Inventors
- 👤 Qi Xiang
- 👤 Philip A. Fisher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
176 words
A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of: providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric insulation layer and the dielectric insulation layer is formed on the silicon substrate; forming an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator in a lower portion of the isolation trench to a depth sufficient to provide a protective shield or barrier whereby a bird's beak cannot form between the silicon active layer and the dielectric insulation layer; rounding at least one corner of the active island in an upper portion of the silicon active layer and forming a sidewall oxide liner in the isolation trench by a thermal oxidation of the silicon active layer exposed in the isolation trench; and filling the isolation trench above the passivating insulator with a trench isolation material.
Claim 2
Independent Claim
176 words
A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of: providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric insulation layer and the dielectric insulation layer is formed on the silicon substrate; forming an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator in a lower portion of the isolation trench to a depth sufficient to provide a protective shield or barrier whereby a bird's beak cannot form between the silicon active layer and the dielectric insulation layer; rounding at least one corner of the active island in an upper portion of the silicon active layer and forming a sidewall oxide liner in the isolation trench by a thermal oxidation of the silicon active layer exposed in the isolation trench; and filling the isolation trench above the passivating insulator with a trench isolation material.
Claim 3
Dependent Claim
27 words
The method of claim 1 , wherein the trench isolation material is a dielectric material comprising one or more of silicon dioxide, silicon nitride or silicon oxynitride.
Claim 4
Dependent Claim
30 words
The method of claim 1 , wherein the depositing step includes a directional deposition, whereby the passivating insulator is deposited substantially only in the lower portion of the isolation trench.
Claim 5
Dependent Claim
25 words
The method of claim 3 , wherein the directional deposition is by one of physical vapor deposition, sputtering, thermal CVD or a plasma enhanced method.
Claim 6
Dependent Claim
28 words
The method of claim 1 , wherein the step of depositing is followed by a step of etching away passivating insulator deposited on sidewalls of the isolation trench.
Claim 7
Dependent Claim
23 words
The method of claim 1 , further comprising a step of selectively etching away passivating insulator deposited on sidewalls of the isolation trench.
Claim 8
Dependent Claim
24 words
The method of claim 1 , wherein the method further comprises forming a liner in the isolation trench prior to filling the isolation trench.
Claim 9
Dependent Claim
34 words
The method of claim 1 , wherein the passivating insulator comprises at least one of an oxide of silicon, a nitride of silicon, a mixture thereof or a mixed oxide and nitride of silicon.
Claim 10
Dependent Claim
14 words
The method of claim 1 , wherein the trench isolation material is a dielectric.
Claim 11
Dependent Claim
31 words
The method of claim 1 , wherein the step of filling fills the isolation trench at least to a level substantially flush with an upper surface of the silicon active layer.
Claim 12
Dependent Claim
26 words
The method of claim 1 , wherein the passivating insulator provides a shield between the isolation trench and a lower portion of the silicon active layer.
Claim 13
Independent Claim
187 words
A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of: providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric insulation layer and the dielectric insulation layer is formed on the silicon substrate; etching through the silicon active layer to form an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator substantially only at the lower portion of the isolation trench to a depth and width sufficient to provide a protective shield or barrier whereby a bird's beak cannot form between the silicon active layer and the dielectric insulation layer; rounding at least one corner of the active island in an upper portion of the silicon active layer; forming a sidewall oxide liner in the isolation trench by a thermal oxidation of the silicon active layer exposed in the isolation trench; and filling the isolation trench above the passivating insulator with a dielectric trench isolation material.
Claim 14
Independent Claim
187 words
A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of: providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric insulation layer and the dielectric insulation layer is formed on the silicon substrate; etching through the silicon active layer to form an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator substantially only at the lower portion of the isolation trench to a depth and width sufficient to provide a protective shield or barrier whereby a bird's beak cannot form between the silicon active layer and the dielectric insulation layer; rounding at least one corner of the active island in an upper portion of the silicon active layer; forming a sidewall oxide liner in the isolation trench by a thermal oxidation of the silicon active layer exposed in the isolation trench; and filling the isolation trench above the passivating insulator with a dielectric trench isolation material.
Claim 15
Dependent Claim
15 words
The method of claim 12 , wherein the step of depositing includes a directional deposition.
Claim 16
Dependent Claim
25 words
The method of claim 13 , wherein the directional deposition is by one of physical vapor deposition, sputtering, thermal CVD or a plasma enhanced method.
Claim 17
Dependent Claim
25 words
The method of claim 12 , wherein the step of depositing further comprises selectively etching away passivating insulator deposited on sidewalls of the isolation trench.
Claim 18
Dependent Claim
34 words
The method of claim 12 , wherein the passivating insulator comprises at least one of an oxide of silicon, a nitride of silicon, a mixture thereof or a mixed oxide and nitride of silicon.
Claim 19
Dependent Claim
31 words
The method of claim 12 , wherein the step of filling fills the isolation trench at least to a level substantially flush with an upper surface of the silicon active layer.
Claim 20
Dependent Claim
26 words
The method of claim 12 , wherein the passivating insulator provides a shield between the isolation trench and a lower portion of the silicon active layer.
Claim 21
Dependent Claim
24 words
The method of claim 12 , wherein the dielectric trench isolation material comprises one or more of silicon dioxide, silicon nitride or silicon oxynitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-24 | 2006-08-26 | 2007-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-24 | 2010-08-26 | 2011-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-24 | 2014-08-26 | 2015-02-25 | $7700.00 | Window Closed / Lapsed |