US6025269A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
Assignee: Micron Technology Inc
•
Filing: 1996-10-15
•
Granted: 2000-02-15
•
Expires: 2016-10-15
Abstract
Abstract A method of forming a conformal aluminum film which is substantially smooth and void free on a refractory metal nitride barrier layer is provided and involves an initial pretreatment of the refractory metal nitride layer by exposing it to a directional gas plasma. An aluminum metal film is then formed over the refractory metal nitride layer. The process may be used to deposit and fill a via, contact, or trench opening with substantially void-free aluminum to provide an electrically conductive path between layers in a semiconductor device.
Inventors
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0523; H10W20/033; H10W20/056
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
82 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a gas plasma to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 2
Independent Claim
82 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a gas plasma to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1 in which said substrate is heated to a temperature of between about 50° to 500° C.
Claim 4
Dependent Claim
16 words
A method as claimed in claim 1 in which said refractory metal nitride is titanium nitride.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 1 in which said gas plasma is selected from the group consisting of nitrogen gas plasma, hydrogen gas plasma, and mixtures thereof.
Claim 6
Dependent Claim
39 words
A method as claimed in claim 1 in which said refractory metal nitride layer is a conformal layer extending into a via, contact, or trench opening in said substrate, said via, contact, or trench opening having generally vertical sidewalls.
Claim 7
Dependent Claim
33 words
A method as claimed in claim 5 in which said gas plasma is directed generally normal to the surface of said substrate and into the bottom of the via, contact, or trench opening.
Claim 8
Dependent Claim
46 words
A method as claimed in claim 5 including the step of depositing a protective layer over said refractory metal layer and said sidewalls of said via, contact, or trench opening prior to exposing the bottom of the via, contact, or trench opening to said gas plasma.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 7 in which said protective layer is a metal oxide or silicon oxide.
Claim 10
Dependent Claim
25 words
A method as claimed in claim 8 in which said protective layer is removed prior to introducing said gaseous aluminum metalorganic precursor into said chamber.
Claim 11
Dependent Claim
15 words
A method as claimed in claim 7 in which said protective layer is a metal.
Claim 12
Dependent Claim
32 words
A method as claimed in claim 1 in which said aluminum metalorganic precursor is selected from the group consisting of dimethyl aluminum hydride, dimethyl ethyl aluminum hydride, triisobutyl aluminum, and mixtures thereof.
Claim 13
Independent Claim
110 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a gas plasma to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
Claim 14
Independent Claim
110 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a gas plasma to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
Claim 15
Dependent Claim
33 words
A method as claimed in claim 12 in which said gas plasma is directed generally normal to the surface of said substrate and into the bottom of the via, contact, or trench opening.
Claim 16
Dependent Claim
46 words
A method as claimed in claim 12 including the step of depositing a protective layer over said refractory metal layer and said sidewalls of said via, contact, or trench opening prior to exposing the bottom of the via, contact, or trench opening to said gas plasma.
Claim 17
Dependent Claim
19 words
A method as claimed in claim 14 in which said protective layer is a metal oxide or silicon oxide.
Claim 18
Dependent Claim
25 words
A method as claimed in claim 15 in which said protective layer is removed prior to introducing said gaseous aluminum metalorganic precursor into said chamber.
Claim 19
Dependent Claim
15 words
A method as claimed in claim 14 in which said protective layer is a metal.
Claim 20
Independent Claim
95 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a nitrogen gas plasma; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor selected from the group consisting of dimethyl aluminum hydride, dimethyl ethyl aluminum hydride, triisobutyl aluminum, and mixtures thereof for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 21
Independent Claim
95 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a nitrogen gas plasma; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor selected from the group consisting of dimethyl aluminum hydride, dimethyl ethyl aluminum hydride, triisobutyl aluminum, and mixtures thereof for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 22
Independent Claim
95 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a gas plasma selected from the group consisting of nitrogen gas plasma, hydrogen gas plasma, and mixtures thereof to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing dimethyl aluminum hydride for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 23
Independent Claim
95 words
A method for forming an aluminum film on a refractory metal nitride layer comprising the steps of: providing a substrate having said refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer to a gas plasma selected from the group consisting of nitrogen gas plasma, hydrogen gas plasma, and mixtures thereof to remove surface oxidation or contaminants; and exposing the surface of said refractory metal nitride layer to a carrier gas containing dimethyl aluminum hydride for a time sufficient to form an aluminum metal film over said refractory metal nitride layer.
Claim 24
Independent Claim
123 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a nitrogen gas plasma; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor selected from the group consisting of dimethyl aluminum hydride, dimethyl ethyl aluminum hydride, triisobutyl aluminum, and mixtures thereof for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
Claim 25
Independent Claim
123 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a nitrogen gas plasma; and exposing the surface of said refractory metal nitride layer to a carrier gas containing a gaseous aluminum metalorganic precursor selected from the group consisting of dimethyl aluminum hydride, dimethyl ethyl aluminum hydride, triisobutyl aluminum, and mixtures thereof for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
Claim 26
Independent Claim
117 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a gas plasma selected from the group consisting of nitrogen gas plasma, hydrogen gas plasma, and mixtures thereof; and exposing the surface of said refractory metal nitride layer to a carrier gas containing dimethyl aluminum hydride for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
Claim 27
Independent Claim
117 words
A method for forming an aluminum plug substantially filling a via, contact, or trench opening on a substrate comprising the steps of: providing a substrate having at least one via, contact, or trench opening, said substrate having a refractory metal nitride layer thereon; exposing the surface of said refractory metal nitride layer and the bottom of said via, contact, or trench opening to a gas plasma selected from the group consisting of nitrogen gas plasma, hydrogen gas plasma, and mixtures thereof; and exposing the surface of said refractory metal nitride layer to a carrier gas containing dimethyl aluminum hydride for a time sufficient to form an aluminum metal plug substantially filling said via, contact, or trench opening.
References Cited (Backward Citations)
US5316972A
Cited
US5393699A
Cited
US5296404A
Cited
US5401675A
Cited
US5252518A
Cited
US5371042A
Cited
US5254499A
Cited
US5677240A
Cited
US5545591A
Cited
US5358901A
Cited
US5384267A
Cited
US5429983A
Cited
US5686335A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-14 | 2003-08-16 | 2004-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-14 | 2007-08-16 | 2008-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-14 | 2011-08-16 | 2012-02-15 | $7700.00 | Window Closed / Lapsed |