Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device

Claim 2

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposit composed mainly of aluminum on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 3

The process according to claim 1, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 4

The process according to claim 1, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.

Claim 5

The process according to claim 1, wherein the deposition speed of aluminum is varied by setting the temperature of the electron donative surface low at the initial stage and then increasing the temperature to a high temperature.

Claim 6

The process according to claim 1, wherein the deposition speed of aluminum is varied by varying the partial pressure of the alkyl aluminum hydride.

Claim 7

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 8

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 9

The process according to claim 6, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 10

The process according to claim 6, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.

Claim 11

The process according to claim 6, wherein the deposition speed of aluminum is varied by setting the temperature of the electron donative surface low at the initial stage and then increasing the temperature to a high temperature.

Claim 12

The process according to claim 6, wherein the deposition speed of aluminum is varied by varying the partial pressure of the alkyl aluminum hydride.

Claim 13

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposit composed mainly of aluminum selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 14

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposit composed mainly of aluminum selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 15

The process according to claim 11, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 16

The process according to claim 11, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.

Claim 17

The process according to claim 11, wherein the deposition speed of aluminum is varied by setting the temperature of the electron donative surface (A) low at the initial stage and then increasing the temperature to a high temperature.

Claim 18

The process according to claim 11, wherein the deposition speed of aluminum is varied by varying the partial pressure of the alkyl aluminum hydride.

Claim 19

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 20

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 21

The process according to claim 16, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 22

The process according to claim 16, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.

Claim 23

The process according to claim 16, wherein the deposition speed of aluminum is varied by setting the temperature of the electron donative surface (A) low at the initial stage and then increasing the temperature to a high temperature.

Claim 24

The process according to claim 16, wherein the deposition speed of aluminum is varied by varying the partial pressure of the alkyl aluminum hydride.

Claim 25

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 26

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 27

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum and containing silicon selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 28

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum and containing silicon selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the first deposition rate is sufficiently lower than the second deposition rate to form an initial film having enhanced surface flatness with inhibited surface migration and wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 29

A process for forming a deposited film comprising the step of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposited composed mainly of aluminum on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 30

A process for forming a deposited film comprising the step of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposited composed mainly of aluminum on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 31

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 32

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 33

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposited composed mainly of aluminum selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 34

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposited composed mainly of aluminum selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 35

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 36

A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum-silicon film selectively on said electron donative surface (A) while varying the deposition speed of aluminum from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 37

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 38

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 39

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum and containing silicon selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 40

A process for preparing a semiconductor device, which comprises: arranging in a space for formation of a deposited film a semiconductor substrate having an insulating film with an opening provided on a main surface thereof; introducing a gas of an alkyl aluminum hydride and a gas containing silicon into said space; maintaining the temperature of said semiconductor substrate within the range from the decomposition temperature of said alkyl aluminum hydride to 450° C.; and depositing a metal composed mainly of aluminum and containing silicon selectively in said opening while varying the decomposition rate from a first deposition rate to a second deposition rate, wherein the second deposition rate is sufficiently higher than the first deposition rate to maximize layer formation and form a flat and high quality film at enhanced deposition speeds.

Claim 41

The process according to claims 1, 6, 11, 16, 21, 22, 23, 24, 25, 26, 27 or 28, wherein the temperature is maintained within the range of from 200° C. to 450° C.

Claim 42

The process according to claim 29, wherein the temperature is maintained within the range of from 200° C. to 400° C.

Claim 43

The process according to claim 23, wherein the substrate further comprises an electron non-donative surface, said deposited metal being selectively deposited on the electron donative surface.

Claim 44

The process according to claim 23 further comprising the step of introducing hydrogen gas into the space for formation of the deposited film.

Claim 45

The process according to claim 23, 31 or 32, wherein the electron donative surface is comprised of a semiconductor or a conductor.

Claim 46

The process according to claim 31, wherein the electron non-donative surface comprises an insulator.

Claim 47

The process according to claim 23 or 31, wherein the decomposition temperature is 160° C.

Claim 48

The process according to claim 23 or 31, wherein at lest one of the pressure and the temperature of the alkyl aluminum hydride gas being introduced during the time of the second deposition rate is higher than it is during the time of the first deposition rate.

Claim 49

The process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposit composed mainly of aluminum on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate of less than 800 Å/min. to a second deposition rate of more than 0.1 μm/min.

Claim 50

The process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a metal deposit composed mainly of aluminum on said electron donative surface while varying the deposition speed of aluminum from a first deposition rate of less than 800 Å/min. to a second deposition rate of more than 0.1 μm/min.

Claim 51

The process according to claim 37, wherein the substrate further comprises an electron non-donative surface, said metal deposit being selectively deposited on the electron donative surface.

Claim 52

The process according to claim 37 further comprising the step of introducing hydrogen gas into the space for formation of the deposited film.

Claim 53

The process according to claim 37, 38 or 39, wherein the electron donative surface is comprised of a semiconductor or a conductor.

Claim 54

The process according to claim 38, wherein the electron non-donative surface comprises an insulator.

Claim 55

The process according to claim 37 or 38, wherein the decomposition temperature is 160° C.

Claim 56

The process according to claim 37 or 38, wherein at least one of the pressure and the temperature of the alkyl aluminum hydride gas being introduced during the time of the second deposition rate is higher than it is during the time of the first deposition rate.