US4497683A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing dielectrically isolated silicon devices
Assignee: Nokia Bell Labs
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Filing: 1982-05-03
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Granted: 1985-02-05
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Expires: 2002-05-03
Abstract
Abstract Dielectrically isolated semiconductor devices are producible through a relatively convenient fabrication procedure. In this fabrication procedure, a substrate having regions of single crystal silicon and regions of silicon oxide is employed. Such substrate is expeditiously produced by methods which leave the surface of the single crystal regions below those of the silicon oxide regions. Silicon is deposited by CVD onto the structure with its regions of silicon dioxide and single crystal silicon. Initially, the conditions of the CVD procedure are controlled so that epitaxial silicon grows on the regions of single crystal silicon but essentially no growth is induced on the silicon oxide regions. When the growth of the single crystal regions has proceeded sufficiently to produce a substantially planar structure, advantageously the deposition conditions are adjusted so that silicon is also deposited on the surface of the silicon oxide. The polycrystalline or amorphous silicon layer overlying regions of silicon oxide produced from this growth is then converted into single crystal silicon.
Inventors
- 👤 George K. Celler
- 👤 McDonald Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:12
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10S148/00; Y10S148/003; Y10S148/09; Y10S148/123
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
189 words
A process for producing a device comprising an active region of single crystal silicon overlying a region of silicon oxide comprising the steps of (1) forming a precursor structure that includes a region of non-single crystal silicon material which both overlies said region of silicon oxide and contacts a nucleative region of single crystal silicon wherein said precursor structure is formed from a body having an exposed surface of a region of single crystal silicon below an exposed surface of said region of silicon oxide by (a) selectively epitaxially depositing silicon on said region of single crystal silicon to produce said nucleating region of single crystal silicon while substantially avoiding the deposition of silicon on said region of silicon oxide until the surface of said epitaxially deposited silicon is substantially coplanar with said surface of said region of silicon oxide and (b) depositing silicon both on said region of silicon oxide and on said nucleating region of single crystal silicon and (2) converting said non-single crystal silicon region into said active region of single crystal silicon by employing said nucleating region of single crystal silicon as a nucleating site.
Claim 2
Dependent Claim
189 words
A process for producing a device comprising an active region of single crystal silicon overlying a region of silicon oxide comprising the steps of (1) forming a precursor structure that includes a region of non-single crystal silicon material which both overlies said region of silicon oxide and contacts a nucleative region of single crystal silicon wherein said precursor structure is formed from a body having an exposed surface of a region of single crystal silicon below an exposed surface of said region of silicon oxide by (a) selectively epitaxially depositing silicon on said region of single crystal silicon to produce said nucleating region of single crystal silicon while substantially avoiding the deposition of silicon on said region of silicon oxide until the surface of said epitaxially deposited silicon is substantially coplanar with said surface of said region of silicon oxide and (b) depositing silicon both on said region of silicon oxide and on said nucleating region of single crystal silicon and (2) converting said non-single crystal silicon region into said active region of single crystal silicon by employing said nucleating region of single crystal silicon as a nucleating site.
Claim 3
Dependent Claim
27 words
The process of claim 1 wherein said selective epitaxial deposition is performed by chemical vapor deposition utilizing an etchant for silicon and a gaseous source of silicon.
Claim 4
Dependent Claim
31 words
The process of claim 2 wherein said source of silicon is chosen from the group consisting of SiH 4 , SiHCl 3 , SiH 2 Cl 2 and SiCl 4 .
Claim 5
Dependent Claim
21 words
The process of either claim 2 or 3 wherein said etchant is chosen from the group consisting of HCl and oxygen.
Claim 6
Dependent Claim
29 words
The process of either claim 2 or 3 wherein said body is heated to a temperature in the range 1050 to 1250 degrees C. during said chemical vapor deposition.
Claim 7
Dependent Claim
13 words
The process of claim 1 wherein said conversion is accomplished by laser melting.
References Cited (Backward Citations)
US3177100A
Cited
US3206339A
Cited
US3409483A
Cited
US3655439A
Cited
US3549432A
Cited
US4046618A
Cited
JPS49123988A
Cited
US3945864A
Cited
JPS5268897A
Cited
US4292091A
Cited
JPS5623781A
Cited
US4395433A
Cited
US4323417A
Cited
US4389481A
Cited
US4383883A
Cited
US4371421A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-05 | 1988-08-06 | 1989-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-05 | 1992-08-06 | 1993-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-05 | 1996-08-06 | 1997-02-05 | $7700.00 | Window Closed / Lapsed |