JPS5268897A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Etching of silicon dioxide film
Assignee: Sony Corp
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Filing: 1975-12-06
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Granted: —
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Expires: 1995-12-06
Abstract
Abstract PURPOSE:To etch economically and precisely SiO2 film without photoresist.
Inventors
- 👤 Haruhiko Koizumi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 18:24
CPC Classifications
—
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