US5208187A
Expired / Lapsed
US
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Metal film forming method
Assignee: Individual
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Filing: 1991-07-08
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Granted: 1993-05-04
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Expires: 2011-07-08
Abstract
Abstract A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.
Inventors
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10P; H10P95/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
101 words
A metal film forming method for a semiconductor device, comprising the steps of: forming an insulation film on a principal surface of a semiconductor body; forming an aperture in said insulation film thereby exposing the surface of said semiconductor body therein; selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture; forming a non-monocrystalline metal film consisting essentially of aluminum on said first monocrystalline metal and on said insulation film by non-selective deposition; and heating said non-monocrystalline metal film to convert at least a part thereof to monocrystalline state, utilizing said first monocrystalline metal as a crystal seed.
Claim 2
Dependent Claim
101 words
A metal film forming method for a semiconductor device, comprising the steps of: forming an insulation film on a principal surface of a semiconductor body; forming an aperture in said insulation film thereby exposing the surface of said semiconductor body therein; selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture; forming a non-monocrystalline metal film consisting essentially of aluminum on said first monocrystalline metal and on said insulation film by non-selective deposition; and heating said non-monocrystalline metal film to convert at least a part thereof to monocrystalline state, utilizing said first monocrystalline metal as a crystal seed.
Claim 3
Dependent Claim
33 words
A method according to claim 1, wherein an aluminum single crystal is selectively deposited as said first monocrystalline metal, in said aperture by a CVD method employing dimethylaluminum hydride gas and hydrogen gas.
Claim 4
Dependent Claim
23 words
A method according to claim 1, wherein said heating is conducted after a second insulation film is formed on said non-monocrystalline metal film.
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said non-monocrystalline metal film is heated to 550° C. or higher.
Claim 6
Dependent Claim
17 words
A method according to claim 4, wherein said non-monocrystalline metal film is heated by resistance heating method.
Claim 7
Dependent Claim
17 words
A method according to claim 4, wherein said non-monocrystalline metal film is heated by radiation heating method.
Claim 8
Dependent Claim
18 words
A method according to claim 4, wherein said non-monocrystalline metal film is heated by laser beam heating method.
Claim 9
Dependent Claim
18 words
A method according to claim 4, wherein said non-monocrystalline metal film is heated by electron beam heating method.
Claim 10
Dependent Claim
17 words
A method according to claim 4, wherein said non-monocrystalline metal film is heated by induction heating method.
Claim 11
Dependent Claim
111 words
A metal film forming method for a semiconductor device, comprising the steps of: forming an insulation film on a principal surface of a semiconductor body; forming an aperture in said insulation film thereby exposing the surface of said semiconductor body; selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture; forming a polycrystalline metal film consisting essentially of aluminum, on said first monocrystalline metal and on said insulation film; converting said polycrystalline metal film into amorphous or microcrystalline metal film; and heating said amorphous or microcrystalline metal film to convert at least a part thereof into monocrystalline state, by utilizing said first monocrystalline metal as a seed crystal.
Claim 12
Dependent Claim
111 words
A metal film forming method for a semiconductor device, comprising the steps of: forming an insulation film on a principal surface of a semiconductor body; forming an aperture in said insulation film thereby exposing the surface of said semiconductor body; selectively depositing a first monocrystalline metal consisting essentially of aluminum, in said aperture; forming a polycrystalline metal film consisting essentially of aluminum, on said first monocrystalline metal and on said insulation film; converting said polycrystalline metal film into amorphous or microcrystalline metal film; and heating said amorphous or microcrystalline metal film to convert at least a part thereof into monocrystalline state, by utilizing said first monocrystalline metal as a seed crystal.
Claim 13
Dependent Claim
33 words
A method according to claim 10, wherein an aluminum single crystal is selectively deposited as said first monocrystalline metal, in said aperture by a CVD method employing dimethylaluminum hydride gas and hydrogen gas.
Claim 14
Dependent Claim
19 words
A method according to claim 10, wherein said conversion to amorphous or microcrystalline state is conducted by ion implantation.
Claim 15
Dependent Claim
25 words
A method according to claim 10, wherein said heating is conducted after a second insulation film is formed on said amorphous or microcrystalline metal film.
Claim 16
Dependent Claim
20 words
A method according to claim 10, wherein said amorphous or microcrystalline metal film is heated to 250° C. or higher.
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