Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form the single crystal Al film on the insulating film regardless of the crystallinity and kind of the insulating film by a method wherein a single crystal Al is used as a seed crystal and the polycrystalline Al film being connected to the single crystal Al film is single-crystallized by performing an electron beam annealing. CONSTITUTION:An insulating film (Si oxide film) 12 is formed on an N-type Si substrate 11 provided with a single crystal Si layer on its surface. An aperture is provided in the insulating film 12 and a surface of the single crystal Si layer is exposed. Al is deposited by cluster ion evaporation on condition that a single crystal Al film 14 is formed on the exposed surface of the single crystal Si layer. A polycrystalline Al film 15 being connected to the Al film 14 is single-crystallized by performing an electron beam annealing and a single crystal thin Al film 16 is formed on the insulating film 12. Thus, the single crystal thin Al film 16 is easily formed regardless of the crystallinity and kind of the insulating film 12.

Inventors

• 👤 Eiji Nagasawa
• 👤 長澤　英二
• 👤 Shuichi Saito
• 👤 修一 齋藤
• 👤 Hidekazu Okabayashi
• 👤 岡林　秀和
• 👤 Toru Mogami
• 👤 徹 最上

Bibliographic Details