US4898841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of filling contact holes for semiconductor devices and contact structures made by that method
Assignee: Nortel Networks Ltd
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Filing: 1988-06-16
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Granted: 1990-02-06
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Expires: 2008-06-16
Abstract
Abstract In a method of filling a contact hole of a semiconductor device, a layer of conducting material, such as a metal silicide, is formed on side walls of the contact hole, and metal is selectively deposited on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact hole to substantially fill the contact hole. The method provides a contact structure comprising a contact region of the semiconductor device defining the bottom of the contact hole, a layer of conducting material, such as a metal silicide, on the side walls of the contact hole, and a metal plug substantially filling the contact hole. The metal plug adheres to the layer of metal silicide on the side walls of the contact hole and to the contact region defining the bottom of the contact hole.
Inventors
- 👤 Vu Q. Ho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
127 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: forming a layer of metal silicide on the side walls of the contact hole, said metal silicide being a silicide of a metal alloy, the alloy comprising a refractory metal and at least one noble metal; and selectively depositing metal on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact hole to substantially fill the contact hole.
Claim 2
Independent Claim
127 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: forming a layer of metal silicide on the side walls of the contact hole, said metal silicide being a silicide of a metal alloy, the alloy comprising a refractory metal and at least one noble metal; and selectively depositing metal on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact hole to substantially fill the contact hole.
Claim 3
Independent Claim
161 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: depositing doped amorphous silicon by plasma assisted chemical vapour deposition on the bottom of the contact hole, the side walls of the contact hole and an upper surface of the dielectric isolation layer; preferentially removing the amorphous silicon from the bottom of the contact hole and the upper surface of the dielectric isolation layer to leave a layer of amorphous silicon adhering to the side walls of the contact hole; and selectively depositing metal on the bottom of the contact hole and on the layer of amorphous silicon on the side walls of the contact hole to substantially fill the contact hole.
Claim 4
Independent Claim
161 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: depositing doped amorphous silicon by plasma assisted chemical vapour deposition on the bottom of the contact hole, the side walls of the contact hole and an upper surface of the dielectric isolation layer; preferentially removing the amorphous silicon from the bottom of the contact hole and the upper surface of the dielectric isolation layer to leave a layer of amorphous silicon adhering to the side walls of the contact hole; and selectively depositing metal on the bottom of the contact hole and on the layer of amorphous silicon on the side walls of the contact hole to substantially fill the contact hole.
Claim 5
Independent Claim
159 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: depositing doped amorphous silicon by electron beam evaporation on the bottom of the contact hole, the side walls of the contact hole and an upper surface of the dielectric isolation layer; preferentially removing the amorphous silicon from the bottom of the contact hole and the upper surface of the dielectric isolation layer to leave a layer of amorphous silicon adhering to the side walls of the contact hole; and selectively depositing metal on the bottom of the contact hole and on the layer of amorphous silicon on the side walls of the contact hole to substantially fill the contact hole.
Claim 6
Independent Claim
159 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: depositing doped amorphous silicon by electron beam evaporation on the bottom of the contact hole, the side walls of the contact hole and an upper surface of the dielectric isolation layer; preferentially removing the amorphous silicon from the bottom of the contact hole and the upper surface of the dielectric isolation layer to leave a layer of amorphous silicon adhering to the side walls of the contact hole; and selectively depositing metal on the bottom of the contact hole and on the layer of amorphous silicon on the side walls of the contact hole to substantially fill the contact hole.
Claim 7
Independent Claim
109 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: forming a layer of metal on the side walls of the contact hole, said metal being a noble metal; and selectively depositing metal on the bottom of the contact hole and on the layer of metal on the side walls of the contact hole to substantially fill the contact hole.
Claim 8
Independent Claim
109 words
A method of filling a contact hole of a semiconductor device, said contact hole extending through a dielectric isolation layer of the semiconductor device to expose a contact region of the semiconductor device, the exposed contact region defining a bottom of the contact hole and the dielectric isolation layer defining side walls of the contact hole, the method comprising: forming a layer of metal on the side walls of the contact hole, said metal being a noble metal; and selectively depositing metal on the bottom of the contact hole and on the layer of metal on the side walls of the contact hole to substantially fill the contact hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-05 | 1993-08-07 | 1994-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-05 | 1997-08-07 | 1998-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-05 | 2001-08-07 | 2002-02-06 | $7700.00 | Window Closed / Lapsed |