US4666737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Via metallization using metal fillets
Assignee: Intersil Corp
•
Filing: 1986-02-11
•
Granted: 1987-05-19
•
Expires: 2006-02-11
Abstract
Abstract A method is provided for semiconductor manufacture wherein a via is defined and etched through an insulative layer of the device to an underlying conductive region and metal fillets are formed in the corner regions of the via. A conformal metal layer is then deposited onto the device and etched until all metal is removed from the insulative layer surface. Finally, a second metal interconnect layer is deposited onto the device and the desired interconnect pattern is defined. The fillets displace the metal subsequently deposited on the via side surface laterally toward the center of the via, thereby preventing severe self-shadowing problems and improving step coverage of metal into the via.
Inventors
- 👤 George E. Gimpelson
- 👤 Anthony L. Rivoli
- 👤 John T. Gasner
- 👤 Elias W. George
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
83 words
A method for metallizing deep vias in a semiconductor surface comprising: depositing a first layer of conductive material onto a surface of a layer of an insulative material having at least one hole therein leading to an underlying conductive region, thereby at least partially filling said hole with said conductive material; etching at least a portion of said conductive layer, thereby forming a fillet in said hole; and depositing a second layer of conductive material into said hole, thereby substantially filling said hole.
Claim 2
Independent Claim
83 words
A method for metallizing deep vias in a semiconductor surface comprising: depositing a first layer of conductive material onto a surface of a layer of an insulative material having at least one hole therein leading to an underlying conductive region, thereby at least partially filling said hole with said conductive material; etching at least a portion of said conductive layer, thereby forming a fillet in said hole; and depositing a second layer of conductive material into said hole, thereby substantially filling said hole.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said first conductive layer is completely removed from said surface of said insulative layer through etching.
Claim 4
Dependent Claim
47 words
A method according to claim 1, wherein a thin layer of metal is deposited onto said surface of said insulative material prior to deposition of said first layer of conductive material, thereby promoting adhesion of said layer of conductive material to said surface of said insulative material.
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein said metal is deposited in said hole on an inside surface of the hole.
Claim 6
Dependent Claim
21 words
A method according to claim 3, wherein said metal is deposited in said hole on a bottom surface of the hole.
Claim 7
Dependent Claim
15 words
A method according to claim 1, wherein said first layer serves as an etch stop.
Claim 8
Dependent Claim
16 words
A method according to claim 1, wherein said first layer of said conductive material comprises tungsten.
Claim 9
Dependent Claim
15 words
A method according to claim 1, wherein said etching is performed with a plasma etchant.
Claim 10
Dependent Claim
22 words
A method according to claim 1, wherein said insulative material is selected from a group consisting of silicon dioxide and silicon nitride.
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein said conductive material is selected from a group consisting of aluminum, alunimum-alloys and tungsten.
Claim 12
Dependent Claim
24 words
A method according to claim 1, wherein said first layer of conductive material is chemically vapor deposited onto said surface of said insulative material.
Claim 13
Dependent Claim
11 words
A method according to claim 3, wherein said metal comprises TiW.
Claim 14
Dependent Claim
15 words
A method according to claim 12, wherein said TiW is sputtered onto said insulative surface.
Claim 15
Dependent Claim
15 words
A method according to claim 3, wherein said metal is sputtered onto said insulative surface.
Claim 16
Dependent Claim
33 words
A method according to claim 1, wherein said hole comprises a via for connecting said second layer of conductive material to another layer of conductive material underlying said second layer of conductive material.
Claim 17
Dependent Claim
21 words
A method according to claim 1, wherein said second layer of conductive material is partially removed and a pattern formed thereon.
Claim 18
Dependent Claim
35 words
A method according to claim 1, wherein said second layer of conductive material is completely removed from said surface of said insulative layer and a third layer of conductive material deposited on said insulative layer.
Claim 19
Dependent Claim
16 words
A method according to claim 1, wherein said second layer is not removed from said hole.
References Cited (Backward Citations)
US3756875A
Cited
US4234362A
Cited
US4255514A
Cited
JPS5687666A
Cited
US4322883A
Cited
US4378627A
Cited
US4448636A
Cited
US4473598A
Cited
US4518629A
Cited
US4415606A
Cited
US4544445A
Cited
US4592802A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-18 | 1990-11-17 | 1991-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-18 | 1994-11-17 | 1995-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-18 | 1998-11-17 | 1999-05-19 | $7700.00 | Window Closed / Lapsed |