Making semiconductor devices
Abstract
Abstract A METHOD OF PRODUCING A SEMICONDUCTIVE STRUCTURE WHICH INCLUDES THE STEP OF APPLYING A LIQUID TO A SURFACE OF THE STRUCTURE WHICH HAS A CONTOUR HAVING SHARP SURFACE IRREGULATARIES, THE LIQUID, ON SOLIDIFICATION, FORMING ON THE SURFACE AN ELECTRICALLY INSULATING SOLID FILM WHICH IS ETCHABLE AND HAS A RELATIVELY SMOOTH SURFACE CONTOUR WHICH IS FREE FROM SHARP SURFACE IRREGULARITIES. WHEN THE SOLID FILM IS FORMED ON THE SURFACE OF A PASSIVATION LAYER AND PART OF THE SURFACE OF AN UNDERLYING SEMICONDUCTIVE LAYER WHICH HAS A SEMICONDUCTOR JUNCTION THEREIN THAT IS COVERED BY, AND LIES NEAR TO AN EDGE OF, THE PASSIVATION LAYER, THE METHOD INCLUDES THE STEP OF ETCHING THE SOLID FILM TO LEAVE A FILLET OF THE FILM MATRIAL AT THE EDGE OF THE PASSIVATION LAYER. THE FILLET EFFECTIVELY STOPS THE MIGRATION OF SURFACE SPECIES ALONG THE SEMICONDUCTIVE-PASSIVATION LAYER INTERFACE. THE LIQUID CAN BE APPLIED BY A WHIRLING OR A DIP-COATING OPERATION.
Inventors
- 👤 W Eccleston
- 👤 K Perkins
Bibliographic Details
Claims Analysis
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