US6054206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition of low density silicon dioxide films
Assignee: Novellus Systems Inc
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Filing: 1998-06-22
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Granted: 2000-04-25
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Expires: 2018-06-22
Abstract
Abstract A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.
Inventors
- 👤 Thomas Weller Mountsier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6336; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10T; Y10T428/00; Y10T428/249921; Y10T428/249953; Y10T428/249967; Y10T428/24997; Y10T428/249987; Y10T428/24999
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
71 words
A process of forming a low-density, porous silica film on a semiconductor substrate comprising: providing a semiconductor substrate in a chemical vapor deposition reactor; providing a silica precursor gas in the reactor, wherein the silica precursor gas contains organic groups; depositing a film of the silica precursor on the substrate in an environment with low oxidant content; and removing essentially all of the organic groups from the deposited silica precursor film.
Claim 2
Dependent Claim
71 words
A process of forming a low-density, porous silica film on a semiconductor substrate comprising: providing a semiconductor substrate in a chemical vapor deposition reactor; providing a silica precursor gas in the reactor, wherein the silica precursor gas contains organic groups; depositing a film of the silica precursor on the substrate in an environment with low oxidant content; and removing essentially all of the organic groups from the deposited silica precursor film.
Claim 3
Dependent Claim
24 words
The process of claim 1 wherein the silica precursor comprises one or more members selected from the group consisting of organosilicates, organosilanes, and alkylalkoxysilanes.
Claim 4
Dependent Claim
19 words
The process of claim 1 wherein the silica precursor is selected from the group consisting of tetraethylorthosilicate and tetramethylorthosilicate.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein removing the organic groups is by heating in an oxidizing environment.
Claim 6
Dependent Claim
17 words
The process of claim 1 wherein removing the organic groups is by exposure to an oxidizing plasma.
Claim 7
Dependent Claim
31 words
The process of claim 1 wherein depositing a film of the silica precursor is depositing a film of the silica precursor at a reactor pressure between 100 mTorr and 10 Torr.
Claim 8
Dependent Claim
30 words
The process of claim 1 wherein depositing a film of the silica precursor is depositing a film of the silica precursor at a temperature between 200° C. and 450° C.
Claim 9
Dependent Claim
17 words
The process of claim 1 further comprising providing a radio frequency discharge in the reactor during deposition.
Claim 10
Dependent Claim
15 words
A porous silica film on a semiconductor substrate produced by the process of claim 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |