US5840631A — Method of manufacturing semiconductor device

Claim 1

Independent Claim 143 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a stall quantity of compound gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising a large quantity of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the compound gas being small relative to the quantity of said main component gas and said large quantity of ozone being large relative to quantities of the water vapor and said one of alkoxysilane-and organosiloxane; and forming an upper wiring layer on said silicon oxide film.

Claim 2

Independent Claim 143 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a stall quantity of compound gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising a large quantity of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the compound gas being small relative to the quantity of said main component gas and said large quantity of ozone being large relative to quantities of the water vapor and said one of alkoxysilane-and organosiloxane; and forming an upper wiring layer on said silicon oxide film.

Claim 3

Dependent Claim 23 words

A method according to claim 1, wherein the added compound gas consists of one acid gas comprising one of phosphorus, boron, and fluorine.

Claim 4

Dependent Claim 16 words

A method according to claim 1, wherein the added compound gas is a gas containing alkali.

Claim 5

Dependent Claim 14 words

A method according to claim 3, wherein the gas containing alkali is ammonia gas.

Claim 6

Dependent Claim 27 words

A method according to claim 1, wherein the compound gas is not more than 10 mol % with respect to the content of the main component gas.

Claim 7

Dependent Claim 16 words

A method according to claim 1, wherein the CVD method is an atmospheric pressure CVD method.

Claim 8

Dependent Claim 27 words

A method according to claim 1, wherein the compound gas promotes dehydration and condensation reaction of a reaction intermediate of the source gas, water vapor, and ozone.

Claim 9

Independent Claim 131 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a phosphoric acid gas having a catalysis at a flow rate of 5 sccm in an environment of a tetraethoxysilane (TEOS) gas having a flow rate substantially equal to 50 sccm, an ozone having a flow rate substantially equal to 400 sccm, and a water vapor having a flow rate substantially equal to 120 sccm at a substrate temperature of approximately 400° C. and at approximately atmospheric pressure to form a silicon oxide film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate at the substrate temperature of 400° C.; and forming an upper wiring layer on said silicon oxide film.

Claim 10

Independent Claim 131 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a phosphoric acid gas having a catalysis at a flow rate of 5 sccm in an environment of a tetraethoxysilane (TEOS) gas having a flow rate substantially equal to 50 sccm, an ozone having a flow rate substantially equal to 400 sccm, and a water vapor having a flow rate substantially equal to 120 sccm at a substrate temperature of approximately 400° C. and at approximately atmospheric pressure to form a silicon oxide film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate at the substrate temperature of 400° C.; and forming an upper wiring layer on said silicon oxide film.

Claim 11

Dependent Claim 53 words

A method according to claim 2, wherein said compound gas is added at a flow rate substantially equal to 5 sccm, said water vapor is added at a flow rate substantially equal to 120 sccm, and said one of alkoxysilane and organosiloxane is added at a flow rate substantially equal to 50 sccm.

Claim 12

Dependent Claim 53 words

A method according to claim 3, wherein said compound gas is added at a flow rate substantially equal to 5 sccm, said water vapor is added at a flow rate substantially equal to 120 sccm, and said one of alkoxysilane and organosiloxane is added at a flow rate substantially equal to 50 sccm.

Claim 13

Independent Claim 138 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a compound gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, wherein the quantity of compound gas is not more than 10 mol % with respect to a quantity of the main component gas; and forming an upper wiring layer on said silicon oxide insulating film, wherein the added compound gas consists of one acid gas comprising one of phosphorus, boron, and fluorine.

Claim 14

Independent Claim 138 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a compound gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, wherein the quantity of compound gas is not more than 10 mol % with respect to a quantity of the main component gas; and forming an upper wiring layer on said silicon oxide insulating film, wherein the added compound gas consists of one acid gas comprising one of phosphorus, boron, and fluorine.

Claim 15

Dependent Claim 16 words

A method according to claim 11, wherein the CVD method is an atmospheric pressure CVD method.

Claim 16

Dependent Claim 27 words

A method according to claim 11, wherein the compound gas promotes dehydration and condensation reaction of a reaction intermediate of the source gas, water vapor, and ozone.

Claim 17

Independent Claim 128 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a small quantity of acid gas having a catalytic effect, said acid gas comprising one of: phosphorous, boron, and fluorine, for promoting formation of silicon oxide using a main component gas comprising ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the acid gas being small relative to the quantity of said main component gas; and forming an upper wiring layer on said silicon oxide film.

Claim 18

Independent Claim 128 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a small quantity of acid gas having a catalytic effect, said acid gas comprising one of: phosphorous, boron, and fluorine, for promoting formation of silicon oxide using a main component gas comprising ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the acid gas being small relative to the quantity of said main component gas; and forming an upper wiring layer on said silicon oxide film.

Claim 19

Independent Claim 122 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a small quantity of alkali gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising a large quantity of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the alkali gas being small relative to the quantity of said main component gas; and forming an upper wiring layer on said silicon oxide film.

Claim 20

Independent Claim 122 words

A method of manufacturing a semiconductor device, comprising the steps of: forming a lower wiring layer on a semiconductor substrate through an insulating film; adding a small quantity of alkali gas having a catalytic effect for promoting formation of silicon oxide using a main component gas comprising a large quantity of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide insulating film by a chemical vapor deposition (CVD) method on a surface of said semiconductor substrate on which said lower wiring layer is formed, said small quantity of the alkali gas being small relative to the quantity of said main component gas; and forming an upper wiring layer on said silicon oxide film.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-11-23	2002-05-25	2002-11-24	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-11-23	2006-05-25	2006-11-24	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-11-23	2010-05-25	2010-11-24	$7700.00	Window Closed / Lapsed

Method of manufacturing semiconductor device

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