US5763018A
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Method for forming dielectric layer
Assignee: Sony Corp
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Filing: 1996-05-29
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Granted: 1998-06-09
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Expires: 2016-05-29
Abstract
Abstract A dielectric layer is formed on a semiconductor substrate by the steps of depositing water molecules and plasma-dissociated products of water on a dielectric layer-forming surface of a substrate according to a plasma enhanced CVD process, and forming a dielectric layer on the dielectric layer-forming surface of the substrate according to a CVD process using a silicon-containing gas and an oxidant as starting gases. Alternatively, water molecules alone may be deposited on the dielectric layer-forming surface according to a normal or reduced pressure CVD process used in placed of the above-mentioned CVD process. By this, the dielectric layer becomes so fluid that a final layer is free of any void and flat. In addition, the dielectric layer having a low concentration of hydroxyl group therein with a good quality can be formed at high productivity.
Inventors
- 👤 Junichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
77 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules and plasma-dissociated products of water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a plasma enhanced CVD process; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas.
Claim 2
Independent Claim
77 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules and plasma-dissociated products of water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a plasma enhanced CVD process; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas.
Claim 3
Dependent Claim
25 words
A method according to claim 1, wherein said silicon-containing gas is a member selected from the group consisting of tetraethoxy ortho-silane, octamethylcyclotetrasiloxane, tetrapropoxysilane, and tetramethylcyclotetrasiloxane.
Claim 4
Dependent Claim
23 words
A method according to claim 1, wherein said oxidant is a member selected from the group consisting of ozone, oxygen and oxygen nitride.
Claim 5
Dependent Claim
41 words
A method according to claim 1, wherein a basic gas used as a catalyst for reaction and selected from the group consisting of ammonia and lower alkylamines is added to the starting gas consisting of the silicon-containing gas and the oxidant.
Claim 6
Independent Claim
99 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules and plasma-dissociated products of water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a plasma enhanced CVD process; applying an ultrasonic wave to said substrate by means of an ultrasonic wave applicator; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas while applying said ultrasonic wave to said substrate.
Claim 7
Independent Claim
99 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules and plasma-dissociated products of water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a plasma enhanced CVD process; applying an ultrasonic wave to said substrate by means of an ultrasonic wave applicator; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas while applying said ultrasonic wave to said substrate.
Claim 8
Dependent Claim
25 words
A method according to claim 5, wherein said silicon-containing gas is a member selected from the group consisting of tetraethoxy ortho-silane, octamethylcyclotetrasiloxane, tetrapropoxysilane, and tetramethylcyclotetrasiloxane.
Claim 9
Dependent Claim
23 words
A method according to claim 5, wherein said oxidant is a member selected from the group consisting of ozone, oxygen and oxygen nitride.
Claim 10
Dependent Claim
41 words
A method according to claim 5, wherein a basic gas used as a catalyst for reaction and selected from the group consisting of ammonia and lower alkylamines is added to the starting gas consisting of the silicon-containing gas and the oxidant.
Claim 11
Independent Claim
82 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a normal or low pressure CVD process, according to a normal or reduced pressure CVD process; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas.
Claim 12
Independent Claim
82 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a normal or low pressure CVD process, according to a normal or reduced pressure CVD process; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas.
Claim 13
Dependent Claim
25 words
A method according to claim 9, wherein said silicon-containing gas is a member selected from the group consisting of tetraethoxy ortho-silane, octamethylcyclotetrasiloxane, tetrapropoxysilane, and tetramethylcyclotetrasiloxane.
Claim 14
Dependent Claim
23 words
A method according to claim 9, wherein said oxidant is a member selected from the group consisting of ozone, oxygen and oxygen nitride.
Claim 15
Dependent Claim
41 words
A method according to claim 9, wherein a basic gas used as a catalyst for reaction and selected from the group consisting of ammonia and lower alkylamines is added to the starting gas consisting of the silicon-containing gas and the oxidant.
Claim 16
Dependent Claim
24 words
A method according to claim 9, wherein said CVD is carried out under reduced pressure ranging from about 1 Pa to about 80 Pa.
Claim 17
Independent Claim
95 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a normal or low pressure CVD process; applying an ultrasonic wave to said substrate by means of an ultrasonic wave applicator; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas while applying said ultrasonic wave to said substrate.
Claim 18
Independent Claim
95 words
A method for forming a dielectric layer on a semiconductor substrate, the method comprising the steps of: depositing water molecules on one side of said substrate, on which the dielectric layer is to be formed, according to a normal or low pressure CVD process; applying an ultrasonic wave to said substrate by means of an ultrasonic wave applicator; and then forming the dielectric layer on the one side of said substrate according to a CVD process using a silicon-containing gas and an oxidant as a starting gas while applying said ultrasonic wave to said substrate.
Claim 19
Dependent Claim
25 words
A method according to claim 14, wherein said silicon-containing gas is a member selected from the group consisting of tetraethoxy ortho-silane, octamethylcyclotetrasiloxane, tetrapropoxysilane, and tetramethylcyclotetrasiloxane.
Claim 20
Dependent Claim
23 words
A method according to claim 14, wherein said oxidant is a member selected from the group consisting of ozone, oxygen and oxygen nitride.
Claim 21
Dependent Claim
41 words
A method according to claim 14, wherein a basic gas used as a catalyst for reaction and selected from the group consisting of ammonia and lower alkylamines is added to the starting gas consisting of the silicon-containing gas and the oxidant.
References Cited (Backward Citations)
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