Method of forming insulating film

Abstract

Abstract PURPOSE:To ensure non-excitation time of active species and improve the fluidity of reaction intermediates by intermittently applying AC or DC and intermittently generating plasma. CONSTITUTION:In an H2O-TEOS plasma CVD method., ammonia is added as basic catalyst capable of forming TEOS reaction product of high molecular weight on a wafer surface, and RF output is intermittently applied in order to smoothly progress the fluidity of reaction product on a wafer. A wafer wherein eat layer insulating film 22 composed of silicon oxide or the like and an Al wiring layer 23 are formed on a semiconductor substrate 21 composed of silicon or the like is prepared. An interlayer film 24 is formed by a normal method, in order to supplement the film quality of plasma CVD wherein basic gas (basic catalyst) is added in the next process. Thereby a flattened insulating film excellent in film quality can be formed.

Inventors

• 👤 Masakazu Muroyama
• 👤 雅和 室山

Bibliographic Details