US5891803A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rapid reflow of conductive layers by directional sputtering for interconnections in integrated circuits
Assignee: Intel Corp
•
Filing: 1996-06-26
•
Granted: 1999-04-06
•
Expires: 2016-06-26
Abstract
Abstract The present invention describes a method for forming interconnections in semiconductor device fabrication. A via (or trench) is formed on a semiconductor substrate. A metal layer is deposited over the semiconductor substrate using directional sputtering techniques. The metal layer is deposited such that the resulting metal layer has a large surface area and a high degree of curvature. The metal layer is then reflowed. During reflow, the high degree of curvature of the metal layer improves the migration of the metal layer. Thus the metal layer is distributed in a manner that rapidly and more evenly fills the via thereby forming a reliable interconnection.
Inventors
- 👤 Donald S. Gardner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:06
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/58; C23C14/5806; C23C14/04; C23C14/046; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
62 words
A method for filling interconnections comprising: forming a via in a dielectric layer; depositing a metal layer, wherein said metal layer is deposited such that said metal layer forms a pile in the center of said via and on the top of the topography of said dielectric layer said metal layer having a high degree of curvature, and; reflowing said metal layer.
Claim 2
Independent Claim
62 words
A method for filling interconnections comprising: forming a via in a dielectric layer; depositing a metal layer, wherein said metal layer is deposited such that said metal layer forms a pile in the center of said via and on the top of the topography of said dielectric layer said metal layer having a high degree of curvature, and; reflowing said metal layer.
Claim 3
Dependent Claim
15 words
The method as described in claim 1 wherein said via is formed in an oxide.
Claim 4
Dependent Claim
15 words
The method as described in claim 1 wherein said metal is patterned using damascene etching.
Claim 5
Dependent Claim
16 words
The method as described in claim 1 wherein said metal layer is deposited using directional sputtering.
Claim 6
Dependent Claim
20 words
The method as described in claim 1 wherein said step of reflowing said metal layer is performed in a vacuum.
Claim 7
Dependent Claim
22 words
The method as described in claim 1 wherein said step of reflowing said metal layer is performed in a hydrogen plasma ambient.
Claim 8
Dependent Claim
21 words
The method as described in claim 1 wherein said metal is selected from the group consisting of: copper and copper alloys.
Claim 9
Dependent Claim
26 words
The method as described in claim 7 wherein said step of reflowing said metal layer is performed at a temperature in the range of 200°-500° C.
Claim 10
Dependent Claim
21 words
The method as described in claim 1 wherein said metal is selected from the group consisting of: aluminum and aluminum alloys.
Claim 11
Dependent Claim
26 words
The method as described in claim 9 wherein said step of reflowing said metal layer is performed at a temperature in the range of 150°-500° C.
Claim 12
Dependent Claim
25 words
The method as described in claim 1 wherein said step of reflowing said metal layer is performed during said step of depositing said metal layer.
Claim 13
Independent Claim
66 words
A method for filling interconnections comprising: forming a via in a dielectric layer; depositing a metal layer, wherein said metal layer is deposited using directional sputtering such that said deposited metal layer forms a pile in the center of said via and on the top of the topography of said dielectric layer, said metal layer having a high degree of curvature, and; reflowing said metal layer.
Claim 14
Independent Claim
66 words
A method for filling interconnections comprising: forming a via in a dielectric layer; depositing a metal layer, wherein said metal layer is deposited using directional sputtering such that said deposited metal layer forms a pile in the center of said via and on the top of the topography of said dielectric layer, said metal layer having a high degree of curvature, and; reflowing said metal layer.
Claim 15
Dependent Claim
15 words
The method as described in claim 12 wherein said via is formed in an oxide.
Claim 16
Dependent Claim
15 words
The method as described in claim 12 wherein said metal is patterned using damascene etching.
Claim 17
Dependent Claim
20 words
The method as described in claim 12 wherein said step of reflowing said metal layer is performed in a vacuum.
Claim 18
Dependent Claim
22 words
The method as described in claim 12 wherein said step of reflowing said metal layer is performed in a hydrogen plasma ambient.
Claim 19
Dependent Claim
21 words
The method as described in claim 12 wherein said metal is selected from the group consisting of: copper and copper alloys.
Claim 20
Dependent Claim
26 words
The method as described in claim 17 wherein said step of reflowing said metal layer is performed at a temperature in the range of 200°-500° C.
Claim 21
Dependent Claim
21 words
The method as described in claim 12 wherein said metal is selected from the group consisting of: aluminum and aluminum alloys.
Claim 22
Dependent Claim
26 words
The method as described in claim 19 wherein said step of reflowing said metal layer is performed at a temperature in the range of 150°-500° C.
Claim 23
Dependent Claim
25 words
The method as described in claim 12 wherein said step of reflowing said metal layer is performed during said step of depositing said metal layer.
References Cited (Backward Citations)
US4920071A
Cited
US4832788A
Cited
US4884123A
Cited
US4920070A
Cited
US4931410A
Cited
US4874493A
Cited
US4914046A
Cited
US5098852A
Cited
US5198154A
Cited
US5043300A
Cited
US5011793A
Cited
US5318923A
Cited
US5213638A
Cited
US5032233A
Cited
US5266521A
Cited
US5124780A
Cited
US5360524A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-05 | 2002-10-05 | 2003-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-05 | 2006-10-05 | 2007-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-05 | 2010-10-05 | 2011-04-06 | $7700.00 | Window Closed / Lapsed |