US5981402A
Expired / Lapsed
US
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Method of fabricating shallow trench isolation
Assignee: United Microelectronics Corp
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Filing: 1998-03-18
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Granted: 1999-11-09
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Expires: 2018-03-18
Abstract
Abstract A method of fabricating shallow trench isolation with multi-step HDP process for avoiding kinks is described. This method is to form two insulator layers with different etching rates, the etching rate of outer insulator layer being slower than that of inner insulator layer. Additionally, use of a multi-step HDP process produces better gapfilling and avoid clipping phenomenon in shallow trench isolations. This method comprises the following steps. A substrate having a mask layer thereabove is provided. A pattern is defined on the mask layer to form a trench. Then, a first insulator layer, which covers the inner wall of the trench and the top surface of the mask layer, is formed. Next, a second insulator layer is formed in the trench and over the first insulator layer, the etching rate of the first insulator layer being slower than that of the second insulator layer. The first and the second insulator layer are removed, using said mask layer as a etching stop layer. The mask layer is removed, leaving a salient plug of the first and the second insulator layer. Finally, the salient plug to first and second insulator layers is etched by isotropic etching to the level of the substrate.
Inventors
- 👤 Chih-Hsiang Hsiao
- 👤 Chin-Ching Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/662; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
142 words
A method of fabricating shallow trench isolation, comprising the steps of: providing a substrate having a mask layer thereabove; patterning said substrate and said mask layer to form a trench; performing a HDP process with low Ar flow and low RF bias power to form a first insulator layer which covers the inner wall of said trench and the top surface of said mask layer; performing a HDP process with high Ar flow and high RF bias power to form a second insulator layer in said trench and over said first insulator layer; removing said first and said second insulator layer, using said mask layer as an etching stop layer; removing said mask layer, so that a portion of said first and said second insulator layer remain as a salient plug; and etching said salient plug of first and second insulator layers.
Claim 2
Independent Claim
142 words
A method of fabricating shallow trench isolation, comprising the steps of: providing a substrate having a mask layer thereabove; patterning said substrate and said mask layer to form a trench; performing a HDP process with low Ar flow and low RF bias power to form a first insulator layer which covers the inner wall of said trench and the top surface of said mask layer; performing a HDP process with high Ar flow and high RF bias power to form a second insulator layer in said trench and over said first insulator layer; removing said first and said second insulator layer, using said mask layer as an etching stop layer; removing said mask layer, so that a portion of said first and said second insulator layer remain as a salient plug; and etching said salient plug of first and second insulator layers.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said mask layer is a silicon nitride layer.
Claim 4
Dependent Claim
17 words
A method according to claim 1, wherein said first insulator layer is a high-density silicon dioxide layer.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein said second insulator layer is a low-density silicon dioxide layer.
Claim 6
Dependent Claim
21 words
A method according to claim 1, wherein said first and said second insulator layers are removed by chemical mechanical polishing process.
Claim 7
Dependent Claim
16 words
A method according to claim 1, wherein the isotropic etching is by using 10:1 HF solution.
Claim 8
Dependent Claim
22 words
A method according to claim 6, wherein the etching rate of said first insulator layer is 300-350 Å/min by 10:1 HF solution.
Claim 9
Dependent Claim
22 words
A method according to claim 6, wherein the etching rate of said second insulator layer is 430-470 Å/min by 10:1 HF solution.
Claim 10
Independent Claim
130 words
A method of fabricating shallow trench isolation, comprising the steps of: providing a substrate having a mask layer thereabove; patterning said substrate and said mask layer to form a trench; forming a first insulator layer which covers the inner wall of said trench and the top surface of said mask layer; forming a second insulator layer in said trench and over said first insulator layer, the etching rate of said first insulator layer being slower than that of said second insulator layer; removing said first and said second insulator layer, using said mask layer as a etching stop layer; removing said mask layer, then portion of said salient plug of first and said second insulator layer; and etching said salient plug of first and second insulator layers by isotropic etching.
Claim 11
Independent Claim
130 words
A method of fabricating shallow trench isolation, comprising the steps of: providing a substrate having a mask layer thereabove; patterning said substrate and said mask layer to form a trench; forming a first insulator layer which covers the inner wall of said trench and the top surface of said mask layer; forming a second insulator layer in said trench and over said first insulator layer, the etching rate of said first insulator layer being slower than that of said second insulator layer; removing said first and said second insulator layer, using said mask layer as a etching stop layer; removing said mask layer, then portion of said salient plug of first and said second insulator layer; and etching said salient plug of first and second insulator layers by isotropic etching.
Claim 12
Dependent Claim
15 words
A method according to claim 9, wherein said mask layer is a silicon nitride layer.
Claim 13
Dependent Claim
31 words
A method according to claim 9, wherein said first insulator layer is a high-density silicon dioxide layer which is formed by HDP with low Ar flow and low RF bias power.
Claim 14
Dependent Claim
31 words
A method according to claim 9, wherein said second insulator layer is a low-density silicon dioxide layer which is formed by HDP with high Ar flow and high RF bias power.
Claim 15
Dependent Claim
21 words
A method according to claim 9, wherein said first and said second insulator layers are removed by chemical mechanical polishing process.
Claim 16
Dependent Claim
16 words
A method according to claim 9, wherein the isotropic etching is by using 10:1 HF solution.
Claim 17
Dependent Claim
22 words
A method according to claim 14, wherein the etching rate by 10:1 HF solution of said first insulator layer is 300-350 Å/min.
Claim 18
Dependent Claim
22 words
A method according to claim 14, wherein the etching rate by 10:1 HF solution of said second insulator layer is 430-470 Å/min.
References Cited (Backward Citations)
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