US6130467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Shallow trench isolation with spacers for improved gate oxide quality
Assignee: GlobalFoundries Inc
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Filing: 1997-12-18
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Granted: 2000-10-10
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Expires: 2017-12-18
Abstract
Abstract An insulated trench isolation structure is formed in a semiconductor substrate with an oxide or nitride spacer overlying and protecting a portion of a pad oxide layer at the trench edge such that the pad oxide layer acts as part of the gate oxide layer. Embodiments include providing a step between the trench fill and the pad oxide layer and forming the protective spacer thereon. The protective spacer protects the underlying portion of the pad oxide layer at the trench edge during pad oxide removal prior to forming a gate oxide. Therefore, it is only necessary to grow the gate oxide on the main surface of the substrate, not at the trench edges. The gate oxide can then be formed uniformly thin, while the remaining pad oxide at the trench edges is relatively thick.
Inventors
- 👤 Basab Bandyopadhyay
- 👤 Nick Kepler
- 👤 Olov Karlsson
- 👤 Larry Wang
- 👤 Effiong Ibok
- 👤 Christopher F. Lyons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
208 words
A semiconductor device comprising: a substrate or epitaxial layer formed in the substrate; a trench, formed in the substrate or epitaxial layer, having side surfaces intersecting a main surface of the substrate or epitaxial layer at edges; a thermally grown oxide liner in the trench and on the edges; a pad oxide layer on the main surface having one end in contact with the oxide liner and another end having a side surface, the pad oxide layer covering a first portion of the main surface having a varied crystallographic orientation and proximal to the trench edges; an insulating material filling the trench and extending above the trench to form a step between the insulating material and the pad oxide layer, the step defined by a substantially vertical side surface of the insulating material, wherein the substantially vertical side surface of the insulating material has a height of 500 Å to about 1250 Å; a protective sidewall spacer on the side surface of the insulating material and extending on the pad oxide layer, wherein the protective sidewall spacer has a width of about 500 Å to about 1000 Å; and a thin gate oxide layer on only a second portion of the main surface having a single crystallographic orientation.
Claim 2
Dependent Claim
208 words
A semiconductor device comprising: a substrate or epitaxial layer formed in the substrate; a trench, formed in the substrate or epitaxial layer, having side surfaces intersecting a main surface of the substrate or epitaxial layer at edges; a thermally grown oxide liner in the trench and on the edges; a pad oxide layer on the main surface having one end in contact with the oxide liner and another end having a side surface, the pad oxide layer covering a first portion of the main surface having a varied crystallographic orientation and proximal to the trench edges; an insulating material filling the trench and extending above the trench to form a step between the insulating material and the pad oxide layer, the step defined by a substantially vertical side surface of the insulating material, wherein the substantially vertical side surface of the insulating material has a height of 500 Å to about 1250 Å; a protective sidewall spacer on the side surface of the insulating material and extending on the pad oxide layer, wherein the protective sidewall spacer has a width of about 500 Å to about 1000 Å; and a thin gate oxide layer on only a second portion of the main surface having a single crystallographic orientation.
Claim 3
Dependent Claim
187 words
A semiconductor device comprising: a substrate or epitaxial layer formed in the substrate; a trench, formed in the substrate or epitaxial layer, having side surfaces intersecting a main surface of the substrate or epitaxial layer at edges; a thermally grown oxide liner in the trench and on the edges; a pad oxide layer on the main surface having one end in contact with the oxide liner and another end having a side surface, the pad oxide layer covering a first portion of the main surface having a varied crystallographic orientation and proximal to the trench edges; an insulating material filling the trench and extending above the trench to form a step between the insulating material and the pad oxide layer, the step defined by a substantially vertical side surface of the insulating material, said substantially vertical side surface having a height of 500 Å to about 1250 Å; a protective sidewall spacer on the side surface of the insulating material and extending on the pad oxide layer; and a thin gate oxide layer on only a second portion of the main surface having a single crystallographic orientation.
Claim 4
Dependent Claim
187 words
A semiconductor device comprising: a substrate or epitaxial layer formed in the substrate; a trench, formed in the substrate or epitaxial layer, having side surfaces intersecting a main surface of the substrate or epitaxial layer at edges; a thermally grown oxide liner in the trench and on the edges; a pad oxide layer on the main surface having one end in contact with the oxide liner and another end having a side surface, the pad oxide layer covering a first portion of the main surface having a varied crystallographic orientation and proximal to the trench edges; an insulating material filling the trench and extending above the trench to form a step between the insulating material and the pad oxide layer, the step defined by a substantially vertical side surface of the insulating material, said substantially vertical side surface having a height of 500 Å to about 1250 Å; a protective sidewall spacer on the side surface of the insulating material and extending on the pad oxide layer; and a thin gate oxide layer on only a second portion of the main surface having a single crystallographic orientation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |