US5868870A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Isolation structure of a shallow semiconductor device trench
Assignee: Micron Technology Inc
•
Filing: 1997-02-11
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Granted: 1999-02-09
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Expires: 2017-02-11
Abstract
Abstract A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating material extends over the peripheral edge of the trench, thereby covering at least a portion of the substrate surrounding the trench, and substantially limiting leakage of the active devices disposed on the substrate.
Inventors
- 👤 Pierre C. Fazan
- 👤 Martin C. Roberts
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:27
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
151 words
A shallow isolating structure of a semiconductor device, said structure comprising: a substrate having a substantially planar upper surface and defining a void of less than about 0.8 μm depth, said void defined at least in part by sidewalls forming a peripheral edge where said sidewalls meet said substantially planar upper surface of said substrate; and an isolating material disposed in said void, said isolating material comprising oxide and forming a cap; said cap having a dome-shaped cross-section of smooth-profile, and having a rim portion extending over said peripheral edge and onto at least a portion of said substantially planar upper surface of said substrate adjacent said void, and said rim portion of said cap having an upper surface descending toward said substantially planar upper surface of said substrate to define an acute angle where said upper surface of said cap would intersect said substantially planar upper surface of said substrate.
Claim 2
Dependent Claim
151 words
A shallow isolating structure of a semiconductor device, said structure comprising: a substrate having a substantially planar upper surface and defining a void of less than about 0.8 μm depth, said void defined at least in part by sidewalls forming a peripheral edge where said sidewalls meet said substantially planar upper surface of said substrate; and an isolating material disposed in said void, said isolating material comprising oxide and forming a cap; said cap having a dome-shaped cross-section of smooth-profile, and having a rim portion extending over said peripheral edge and onto at least a portion of said substantially planar upper surface of said substrate adjacent said void, and said rim portion of said cap having an upper surface descending toward said substantially planar upper surface of said substrate to define an acute angle where said upper surface of said cap would intersect said substantially planar upper surface of said substrate.
Claim 3
Dependent Claim
15 words
The isolating structure according to claim 1, further comprising: a conformal layer lining said void.
Claim 4
Dependent Claim
21 words
The isolating structure according to claim 2, wherein said conformal layer is an oxide, said oxide being thermally grown or deposited.
Claim 5
Dependent Claim
23 words
The isolating structure according to claim 1, further comprising: another layer disposed conformably over said substrate, said another layer covering said isolating material.
Claim 6
Dependent Claim
41 words
The isolating structure according to claim 1, wherein said void has sidewalls, said sidewalls being sloped at an angle in the range of approximately 90° to 70° relative to the planar surface of said region of said substrate proximate said void.
Claim 7
Dependent Claim
86 words
A shallow trench isolating structure of a semiconductor device, said structure comprising: a substrate having a substantially planar surface adjacent a trench of less than about 0.8 μm depth, said trench defined at least in part by sidewalls forming an edge where said sidewalls meet said planar surface; and isolating material comprising an oxide filling said trench and having a dome-shaped cap, said dome-shaped cap having a portion extending beyond said edge and onto a portion of the planar surface of said substrate adjacent said trench.
Claim 8
Dependent Claim
86 words
A shallow trench isolating structure of a semiconductor device, said structure comprising: a substrate having a substantially planar surface adjacent a trench of less than about 0.8 μm depth, said trench defined at least in part by sidewalls forming an edge where said sidewalls meet said planar surface; and isolating material comprising an oxide filling said trench and having a dome-shaped cap, said dome-shaped cap having a portion extending beyond said edge and onto a portion of the planar surface of said substrate adjacent said trench.
Claim 9
Dependent Claim
22 words
The isolating structure according to claim 6, further comprising: a conformal layer lining said trench intermediate said substrate and said isolating material.
Claim 10
Dependent Claim
16 words
The isolating structure according to claim 7, wherein said conformal layer is a thermally grown oxide.
Claim 11
Dependent Claim
20 words
The isolating structure according to claim 6, further comprising another layer disposed conformably over said substrate and said isolating material.
Claim 12
Dependent Claim
28 words
The isolating structure according to claim 1, wherein said sidewalls defining said void are sloped at an angle of about 90° to 70° relative to said planar surface.
Claim 13
Dependent Claim
86 words
A shallow isolation structure of a semiconductor device comprising: a substrate having a substantially planar surface and defining a groove of less than about 0.8 μm depth, said groove defined in part by sidewalls which form an edge where the sidewalls meet said planar surface; and oxide material filling said groove and forming a cap over said groove, said cap having a dome-shaped profile and including a portion that extends beyond said edge and over and against a portion of said planar surface of said substrate.
Claim 14
Dependent Claim
86 words
A shallow isolation structure of a semiconductor device comprising: a substrate having a substantially planar surface and defining a groove of less than about 0.8 μm depth, said groove defined in part by sidewalls which form an edge where the sidewalls meet said planar surface; and oxide material filling said groove and forming a cap over said groove, said cap having a dome-shaped profile and including a portion that extends beyond said edge and over and against a portion of said planar surface of said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-08 | 2002-08-10 | 2003-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-08 | 2006-08-10 | 2007-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-08 | 2010-08-10 | 2011-02-09 | $7700.00 | Window Closed / Lapsed |