US4729006A — Sidewall spacers for CMOS circuit stress relief/i…

Claim 1

Independent Claim 268 words

Fully isolated semiconductor regions for the manufacture of integrated circuits, comprising: a substrate of doped semiconductors of a first conductivity type; a plurality of trenches formed in designated areas of said substrate, and said trenches having a bottom, corners, and substantially vertical sidewalls, wherein said sidewalls form the walls of mesas, said mesas having a top surface; sidewall spacers disposed on selected sidewalls which form mesas wich have been designated as mesas wherein channel devices of the opposite conductivity type to said first conductivity type are to be formed and on a portion of said trench bottoms adjacent to said selected sidewalls, said sidewall spacers being comprised of an insulating material doped to have a low viscosity at an elevated temperature with a dopant having said first conductivity type, said spacers extending along the designated sidewalls with their greatest thickness at the trench bottoms; an insulation material with a viscosity at said elevated temperature greater than the viscosity of said sidewall spacer doped material, said insulation material disposed to fill said trenches up to said top surface of said mesas; and channel stops of said first conductivity type formed in said selected sidewalls of said designated mesas and formed around said trench corner and below said sidewall spacers by means of diffusion of said dopant of said first conductivity type from said sidewall spacers; wherein said sidewall spacers reduce the occurrence of cracks in the insulator material filling said trenches by relieving internal mechanical stress therein thereby permitting deeper trenches, and allow the formation of channel stops via diffusion thereby permitting said mesa sidewalls to be substantially vertical.

Claim 2

Dependent Claim 268 words

Fully isolated semiconductor regions for the manufacture of integrated circuits, comprising: a substrate of doped semiconductors of a first conductivity type; a plurality of trenches formed in designated areas of said substrate, and said trenches having a bottom, corners, and substantially vertical sidewalls, wherein said sidewalls form the walls of mesas, said mesas having a top surface; sidewall spacers disposed on selected sidewalls which form mesas wich have been designated as mesas wherein channel devices of the opposite conductivity type to said first conductivity type are to be formed and on a portion of said trench bottoms adjacent to said selected sidewalls, said sidewall spacers being comprised of an insulating material doped to have a low viscosity at an elevated temperature with a dopant having said first conductivity type, said spacers extending along the designated sidewalls with their greatest thickness at the trench bottoms; an insulation material with a viscosity at said elevated temperature greater than the viscosity of said sidewall spacer doped material, said insulation material disposed to fill said trenches up to said top surface of said mesas; and channel stops of said first conductivity type formed in said selected sidewalls of said designated mesas and formed around said trench corner and below said sidewall spacers by means of diffusion of said dopant of said first conductivity type from said sidewall spacers; wherein said sidewall spacers reduce the occurrence of cracks in the insulator material filling said trenches by relieving internal mechanical stress therein thereby permitting deeper trenches, and allow the formation of channel stops via diffusion thereby permitting said mesa sidewalls to be substantially vertical.

Claim 3

Dependent Claim 69 words

Semiconductor regions as defined in claim 1, wherein said sidewall spacers comprise: a thin first insulated layer disposed on said selected sidewalls and said portions of said trench bottoms adjacent to said selected sidewalls with a thickness sufficiently thin so that dopant diffusion takes place therethrough upon heating; and a second insulator layer disposed only on said first insulator layer and including said dopant of said first conductivity type.

Claim 4

Dependent Claim 15 words

Semiconductor regions as defined in claim 2, wherein said first conductivity type is P type.

Claim 5

Dependent Claim 18 words

Semiconductor regions as defined in claim 3, wherein said substrate is P- epi-layer disposed on P+ doped silicon.

Claim 6

Dependent Claim 24 words

Semiconductor regions as defined in claim 4, wherein said dopant for said sidewall spacers is boron with a doping concentration of 2-15 wt %.

Claim 7

Dependent Claim 15 words

Semiconductor regions as defined in claim 5, wherein said second insulator layer is borosilicate glass.

Claim 8

Dependent Claim 22 words

Semiconductor regions as defined in claim 6, wherein said trench sidewalls form an angle from the trench bottom in the range 80°-93°.

Claim 9

Dependent Claim 59 words

Semiconductor regions as defined in claim 1, wherein said channel devices formed in a plurality of said designated mesas comprise field effect transistors having source, drain, and channel regions, wherein each of said channel regions is disposed in a mesa to extend between said source and drain regions, and said source and drain regions are adjacent respective channel stops.

Claim 10

Dependent Claim 15 words

Semiconductor regions as defined in claim 8 wherein said first conductivity type is P type.

Claim 11

Dependent Claim 18 words

Semiconductor regions as defined in claim 9, wherein said substrate is P- epi-layer disposed on P+ doped silicon.

Claim 12

Dependent Claim 16 words

Semiconductor regions as defined in claim 10, wherein said dopant for said sidewall spacers is boron.

Claim 13

Dependent Claim 23 words

Semiconductor regions as defined in claim 11, wherein said second insulator layer is borosilicate glass with a 2-15 wt % boron doping concentration.

Claim 14

Dependent Claim 22 words

Semiconductor regions as defined in claim 12, wherein said trench sidewalls form an angle from the trench bottom in the range 80°-93°.

Claim 15

Dependent Claim 262 words

Fully isolated semiconductor regions for the manufacture of CMOS integrated circuits, comprising: a substrate of a P- epi-layer disposed on P+ silicon; a plurality of trenches formed in predetermined areas of said substrate, said trenches having a bottom, corners, and substantially vertical sidewalls, wherein said sidewalls form the walls of mesas, said mesas having a top surface; sidewall spacers of borosilicate glass doped to 2-15 wt % formed only on selected sidewalls which form mesas which have been designated to have N-channel devices formed therein, and on a portion of said trench bottoms adajcent to said selected sidewalls, said spacers extending along the designated sidewalls with their greatest thickness at the trench bottoms; SiO 2 disposed to fill said trenches up to said top surface of said mesas; channel stops of P conductivity type formed in said selected sidewalls of said designated N-channel mesas and formed around said trench corners and below said sidewall spacers by means of diffusion of the dopant from said borosilicate glass from said sidewall spacers; and means defining a field effect transistor having source, drain, and channel regions, on a plurality of said designated mesas, wherein said channel region is disposed in the mesa to extend between said source and drain regions, and said source and drain regions are adjacent respective channel stops; wherein said sidewall spacers reduce the occurrence of cracks in the SiO 2 filling said trenches by relieving internal mechanical stress therein thereby permitting deeper trenches, and allow the formation of channel stops via diffusion thereby permitting said mesa sidewalls to be substantially vertical.

Claim 16

Dependent Claim 262 words

Fully isolated semiconductor regions for the manufacture of CMOS integrated circuits, comprising: a substrate of a P- epi-layer disposed on P+ silicon; a plurality of trenches formed in predetermined areas of said substrate, said trenches having a bottom, corners, and substantially vertical sidewalls, wherein said sidewalls form the walls of mesas, said mesas having a top surface; sidewall spacers of borosilicate glass doped to 2-15 wt % formed only on selected sidewalls which form mesas which have been designated to have N-channel devices formed therein, and on a portion of said trench bottoms adajcent to said selected sidewalls, said spacers extending along the designated sidewalls with their greatest thickness at the trench bottoms; SiO 2 disposed to fill said trenches up to said top surface of said mesas; channel stops of P conductivity type formed in said selected sidewalls of said designated N-channel mesas and formed around said trench corners and below said sidewall spacers by means of diffusion of the dopant from said borosilicate glass from said sidewall spacers; and means defining a field effect transistor having source, drain, and channel regions, on a plurality of said designated mesas, wherein said channel region is disposed in the mesa to extend between said source and drain regions, and said source and drain regions are adjacent respective channel stops; wherein said sidewall spacers reduce the occurrence of cracks in the SiO 2 filling said trenches by relieving internal mechanical stress therein thereby permitting deeper trenches, and allow the formation of channel stops via diffusion thereby permitting said mesa sidewalls to be substantially vertical.

Claim 17

Dependent Claim 51 words

Semiconductor regions as defind in claim 14, wherein said sidewall spacers include a first layer of SiO 2 disposed between said doped borosilicate glass and the selected mesa sidewalls, and with a thickness sufficiently thin so that diffusion of the borosilicate glass dopant takes place therethrough into said selected mesa sidewalls.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1991-03-01	1991-08-31	1992-03-01	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1995-03-01	1995-08-31	1996-03-01	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1999-03-01	1999-08-31	2000-03-01	$7700.00	Window Closed / Lapsed

Sidewall spacers for CMOS circuit stress relief/isolation and method for making

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