US6440837B1
Expired / Lapsed
US
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Method of forming a contact structure in a semiconductor device
Assignee: Round Rock Research LLC
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Filing: 2000-07-14
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Granted: 2002-08-27
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Expires: 2020-07-14
Abstract
Abstract Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Inventors
- 👤 Steven T. Harshfield
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:46
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/011; H10N70/061; H10N70/068; H10N70/801; H10N70/821; H10N70/826; H10N70/8265; H10N70/841; H10N70/8418; H10N70/881; H10N70/882; H10N70/8828; H10B; H10B63/00; H10B63/80; H10B63/82
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
137 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface wherein said contact hole is substantially circularly; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer to expose a peripheral portion of said layer of material within said contact hole.
Claim 2
Independent Claim
137 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface wherein said contact hole is substantially circularly; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer to expose a peripheral portion of said layer of material within said contact hole.
Claim 3
Independent Claim
140 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer to expose a peripheral portion of said layer of material within said contact hole wherein said step of removing comprises a facet etch process.
Claim 4
Independent Claim
140 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate with a conductive region; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a layer of material on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said material comprises one of a conductive material and a memory material; forming a second insulative layer on said layer of material and filling said contact hole; and removing a portion of said second insulative layer to expose a peripheral portion of said layer of material within said contact hole wherein said step of removing comprises a facet etch process.
Claim 5
Independent Claim
223 words
A method of forming a non-volatile memory element in a semiconductor substrate comprising the steps of: forming a conductive region on said substrate; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a first layer of material on said bottom surface and said sidewall surface, said first layer of material partially filling said contact hole, wherein said first layer of material comprises one of a first conductive material and a first memory material; forming a second insulative layer on said first layer of material; removing a portion of said second insulative layer to expose a peripheral portion of said first layer of material on said sidewall surface; forming a second layer of material over at least a portion of said peripheral portion of said first layer of material, said second layer of material comprising a second conductive material if said first layer of material is said first memory material, and said second layer of material comprising a second memory material if said first layer of material is said first conductive material; and forming a conductive layer over said second layer of material if said second layer of material is said second memory material.
Claim 6
Independent Claim
223 words
A method of forming a non-volatile memory element in a semiconductor substrate comprising the steps of: forming a conductive region on said substrate; forming a first insulative layer on said conductive region; forming a contact hole in said first insulative layer exposing at least a portion of said conductive region, said contact hole having a bottom surface and a sidewall surface; forming a first layer of material on said bottom surface and said sidewall surface, said first layer of material partially filling said contact hole, wherein said first layer of material comprises one of a first conductive material and a first memory material; forming a second insulative layer on said first layer of material; removing a portion of said second insulative layer to expose a peripheral portion of said first layer of material on said sidewall surface; forming a second layer of material over at least a portion of said peripheral portion of said first layer of material, said second layer of material comprising a second conductive material if said first layer of material is said first memory material, and said second layer of material comprising a second memory material if said first layer of material is said first conductive material; and forming a conductive layer over said second layer of material if said second layer of material is said second memory material.
Claim 7
Dependent Claim
19 words
The method of claim 3 , wherein said conductive region forms a word line for said non-volatile memory element.
Claim 8
Dependent Claim
19 words
The method of claim 3 , wherein said conductive layer forms a bit line for said non-volatile memory element.
Claim 9
Dependent Claim
15 words
The method of claim 3 , wherein said first and second memory materials comprise chalcogenide.
Claim 10
Dependent Claim
26 words
The method of claim 6 , further comprising the step of forming an access device coupled to one of said conductive region and said conductive layer.
Claim 11
Dependent Claim
16 words
The method of claim 3 , wherein said first and second insulative layers comprise silicon dioxide.
Claim 12
Dependent Claim
13 words
The method of claim 3 , wherein said contact hole is a trench.
Claim 13
Dependent Claim
14 words
The method of claim 9 , wherein said peripheral portion is a linear contact.
Claim 14
Dependent Claim
13 words
The method of claim 3 , wherein said contact hole is substantially circular.
Claim 15
Dependent Claim
14 words
The method of claim 11 , wherein said peripheral portion is an annular contact.
Claim 16
Dependent Claim
16 words
The method of claim 3 , wherein said step of removing comprises a facet etch process.
Claim 17
Dependent Claim
17 words
The method of claim 3 , wherein said step of removing comprises a chemical-mechanical polishing (CMP) process.
Claim 18
Dependent Claim
26 words
The method of claim 14 , wherein said CMP process completely removes a portion of said second insulative layer which is not within said contact hole.
Claim 19
Dependent Claim
22 words
A The method of claim 3 , wherein at least one of said steps of forming comprise a chemical vapor deposition process.
Claim 20
Independent Claim
144 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate; forming a structure on said substrate, said structure protruding from said substrate and having an edge, and said structure comprising one of a first conductive material and a first memory material; forming a conformal insulative layer over said structure; selectively etching away a portion of said conformal insulative material to expose said edge of said structure and form a contact; forming a layer of material over said contact, said layer of material comprising a second conductive material if said first layer of material is said first memory material, and said layer of material comprising a second memory material if said first layer of material is said first conductive material; and forming a conductive layer over said layer of material if said layer of material is said second memory material.
Claim 21
Independent Claim
144 words
A method of forming a contact structure in a semiconductor device comprising: providing a substrate; forming a structure on said substrate, said structure protruding from said substrate and having an edge, and said structure comprising one of a first conductive material and a first memory material; forming a conformal insulative layer over said structure; selectively etching away a portion of said conformal insulative material to expose said edge of said structure and form a contact; forming a layer of material over said contact, said layer of material comprising a second conductive material if said first layer of material is said first memory material, and said layer of material comprising a second memory material if said first layer of material is said first conductive material; and forming a conductive layer over said layer of material if said layer of material is said second memory material.
Claim 22
Dependent Claim
32 words
The method of claim 17 , wherein said step of providing a substrate comprises the step of forming a conductive region on said substrate if said structure comprises said first memory material.
Claim 23
Dependent Claim
12 words
The method of claim 17 , wherein said structure is a pillar.
Claim 24
Dependent Claim
12 words
The method of claim 17 , wherein said pillar is substantially circular.
Claim 25
Dependent Claim
12 words
The method of claim 20 , wherein said contact is substantially annular.
Claim 26
Dependent Claim
12 words
The method of claim 17 , wherein said structure is a line.
Claim 27
Dependent Claim
12 words
The method of claim 22 , wherein said contact is substantially linear.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-26 | 2006-02-25 | 2006-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-26 | 2010-02-25 | 2010-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-26 | 2014-02-25 | 2014-08-27 | $7700.00 | Window Closed / Lapsed |