US5888858A
Expired / Lapsed
US
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Semiconductor device and fabrication method thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-01-16
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Granted: 1999-03-30
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Expires: 2017-01-16
Abstract
Abstract Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film is formed in this step. At this time, gettering of the nickel element into the thermal oxide film takes place. Then, the thermal oxide film is removed. Thereby, a crystal silicon film having low concentration of the metal element and a high crystalinity can be obtained.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Satoshi Teramoto
- 👤 Jun Koyama
- 👤 Yasushi Ogata
- 👤 Masahiko Hayakawa
- 👤 Mitsuaki Osame
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/201; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3806; H10P36/00; H10P36/03; H10P36/07; H10D30/6737; H10D30/6739
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
101 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising amorphous silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming a thermal oxide film on the surface of a region from which said thermal oxide film has been eliminated by implementing another thermal oxidation.
Claim 2
Independent Claim
101 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising amorphous silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming a thermal oxide film on the surface of a region from which said thermal oxide film has been eliminated by implementing another thermal oxidation.
Claim 3
Independent Claim
127 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising amorphous silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere to form a thermal oxide film on the surface of said crystalline semiconductor film and by causing said thermal oxide film to getter said metal element; eliminating said thermal oxide film formed in the previous step; and forming a thermal oxide film on the surface of a region from which said thermal oxide film has been eliminated by implementing another thermal oxidation.
Claim 4
Independent Claim
127 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising amorphous silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere to form a thermal oxide film on the surface of said crystalline semiconductor film and by causing said thermal oxide film to getter said metal element; eliminating said thermal oxide film formed in the previous step; and forming a thermal oxide film on the surface of a region from which said thermal oxide film has been eliminated by implementing another thermal oxidation.
Claim 5
Independent Claim
115 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; forming an active layer of a thin film transistor by implementing patterning; and forming a thermal oxide film which constitutes at least a part of a gate insulating film on the surface of said active layer by means of thermal oxidation.
Claim 6
Independent Claim
115 words
A method for fabricating a semiconductor device, comprising steps of: intentionally introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising silicon and crystallizing said semiconductor film by a first heat treatment to obtain a crystalline semiconductor film; eliminating or reducing said metal element existing within said crystalline semiconductor film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; forming an active layer of a thin film transistor by implementing patterning; and forming a thermal oxide film which constitutes at least a part of a gate insulating film on the surface of said active layer by means of thermal oxidation.
Claim 7
Independent Claim
105 words
A method for fabricating a semiconductor device, comprising steps of: selectively introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising; growing crystal by a first heat treatment in a direction parallel to the film from the region to which said metal element has been selectively introduced; forming a thermal oxide film on the surface of the region where said crystal has been grown by implementing a second heat treatment within an oxidizing atmosphere; eliminating said thermal oxide film; and forming an active layer of said semiconductor device by using the region from which said thermal oxide film has been eliminated.
Claim 8
Independent Claim
105 words
A method for fabricating a semiconductor device, comprising steps of: selectively introducing a metal element which promotes crystallization of silicon to a semiconductor film comprising; growing crystal by a first heat treatment in a direction parallel to the film from the region to which said metal element has been selectively introduced; forming a thermal oxide film on the surface of the region where said crystal has been grown by implementing a second heat treatment within an oxidizing atmosphere; eliminating said thermal oxide film; and forming an active layer of said semiconductor device by using the region from which said thermal oxide film has been eliminated.
Claim 9
Independent Claim
50 words
The method for fabricating the semiconductor device according to any one of claims 1 through 4, characterized in that one or a plurality elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element which promotes the crystallization of silicon.
Claim 10
Independent Claim
35 words
The method for fabricating the semiconductor device according to any one of claims 1 through 4, characterized in that the temperature of the first heat treatment is higher than that of the second heat treatment.
Claim 11
Independent Claim
37 words
The method for fabricating the semiconductor device according to any one of claims 1 through 4, characterized in that annealing is carried out in a plasma atmosphere containing oxygen and hydrogen after eliminating said thermal oxide film.
Claim 12
Independent Claim
39 words
The method for fabricating the semiconductor device according to any one of claims 1 through 4, characterized in that the concentration of oxygen contained in said semiconductor film is 5×10 17 cm -3 to 2×10 19 cm 3 .
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-03-29 | 2002-09-28 | 2003-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-29 | 2006-09-28 | 2007-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-29 | 2010-09-28 | 2011-03-30 | $7700.00 | Window Closed / Lapsed |