Abstract The present invention provides a method of manufacturing a semiconductor wafer whereby (1) deterioration of a micro-roughness in a low temperature range in hydrogen atmospheric treatment and increase of resistivity due to outward diffusion of an electrically active impurity in a high temperature range are prevented; (2) in the heat treatment in a hydrogen gas atmosphere, the concentration of gas molecules in the atmosphere, such as water, oxygen and the like, are brought to 5 ppm or less in water molecule conversion; and a reaction is suppressed in which a substrate surface is oxidized unequally and the micro-roughness deteriorates; and (3) the same kind of impurity as the electrically active impurity contained in a Si substrate is mixed into the atmosphere and the outward diffusion of the impurity in the vicinity of the Si substrate surface is prevented to prevent variation of the resistivity.
In a method of manufacturing a semiconductor wafer, a method of heat treatment of a semiconductor silicon substrate during loading of the semiconductor silicon substrate in a furnace having an internal temperature of greater than room temperature by 300° C. or less, said method of heat treatment comprising: (a) loading the semiconductor silicon substrate onto a loading table which is in turn loaded in the furnace and thereafter replacing atmospheric gas in the furnace with a nitrogen gas atmosphere; (b) subsequently replacing the nitrogen gas atmosphere with a hydrogen gas atmosphere and raising the internal temperature to 750° C. to 800° C. in the hydrogen gas atmosphere, and maintaining this temperature for 10 to 30 minutes to desorb water and oxygen molecules, wherein replacement with the hydrogen gas atmosphere makes total concentration of water and oxygen molecules less than 5 ppm in water conversion; and (c) raising the internal temperature in the hydrogen gas atmosphere to a temperature in a range of from 950° C. to 1200° C. for heat treatment of the semiconductor silicon substrate in the hydrogen gas atmosphere.
Claim 2
Dependent Claim
181 words
In a method of manufacturing a semiconductor wafer, a method of heat treatment of a semiconductor silicon substrate during loading of the semiconductor silicon substrate in a furnace having an internal temperature of greater than room temperature by 300° C. or less, said method of heat treatment comprising: (a) loading the semiconductor silicon substrate onto a loading table which is in turn loaded in the furnace and thereafter replacing atmospheric gas in the furnace with a nitrogen gas atmosphere; (b) subsequently replacing the nitrogen gas atmosphere with a hydrogen gas atmosphere and raising the internal temperature to 750° C. to 800° C. in the hydrogen gas atmosphere, and maintaining this temperature for 10 to 30 minutes to desorb water and oxygen molecules, wherein replacement with the hydrogen gas atmosphere makes total concentration of water and oxygen molecules less than 5 ppm in water conversion; and (c) raising the internal temperature in the hydrogen gas atmosphere to a temperature in a range of from 950° C. to 1200° C. for heat treatment of the semiconductor silicon substrate in the hydrogen gas atmosphere.