US5213670A
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US
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Method for manufacturing a polycrystalline layer on a substrate
Assignee: Qimonda AG
•
Filing: 1991-08-09
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Granted: 1993-05-25
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Expires: 2011-08-09
Abstract
Abstract A manufacturing method for polycrystalline silicon layers with a defined particle size and texture on a substrate provides for depositing of an amorphous silicon layer on the substrate. The substrate with the amorphous silicon layer is placed into a furnace at an initial temperature lower than the crystallization temperature of amorphous silicon. After an adjustment to thermal equilibrium, the furnace is heated in a controlled fashion from the initial temperature to a target temperature which is higher than the crystallization temperature, whereby the amorphous silicon layer is completely crystallized and becomes a polycrystalline layer. The method is particularly applicable in manufacturing polycrystalline silicon resistances for integrated circuits.
Inventors
- 👤 Emmerich Bertagnolli
- 👤 Herbert Kabza
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:29
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/58; C23C14/5806; C23C14/06; C23C14/14; C23C14/584; C23C16/00; C23C16/22; C23C16/24; C23C16/56; H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10P; H10P95/00
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
166 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; and then controlling the phase transformation of the amorphous silicon into a polycrystalline layer by the steps of: heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystalline temperature for the amorphous silicon, holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature, and then, after reaching the thermal equilibrium, continuing the heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate through a reproducible prescribed temperature profile from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 2
Independent Claim
166 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; and then controlling the phase transformation of the amorphous silicon into a polycrystalline layer by the steps of: heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystalline temperature for the amorphous silicon, holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature, and then, after reaching the thermal equilibrium, continuing the heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate through a reproducible prescribed temperature profile from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, further comprising the step of: tempering said substrate substantially at said target temperature.
Claim 4
Dependent Claim
26 words
A method as claimed in claim 2, wherein said step of tempering said substrate substantially at said target temperature is conducted for at least 15 minutes.
Claim 5
Dependent Claim
51 words
A method as claimed in claim 1, wherein said step of depositing of said amorphous silicon layer utilizes a CVD (chemical vapor deposition) process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 1, wherein said step of depositing of said amorphous silicon layer is by sputtering.
Claim 7
Dependent Claim
22 words
A method as claimed in claim 1, wherein said target temperature is in a range of approximately 700° C. to 800° C.
Claim 8
Dependent Claim
39 words
A method as claimed in claim 1, wherein said step of controlled heating from said initial temperature to said target temperature is carried out with a controlled rate of no more than 10° C. change in temperature per minute.
Claim 9
Dependent Claim
39 words
A method as claimed in claim 1, wherein said step of controlled heating from said initial temperature to said target temperature is carried out by rapid thermal annealing using a controlled rate of at least 100° C. per second.
Claim 10
Dependent Claim
28 words
A method as claimed in claim 1, further comprising the step of: doping said amorphous silicon layers via implantation of a doping agent after said step of depositing.
Claim 11
Dependent Claim
22 words
A method as claimed in claim 1, further comprising the step of: doping said polycrystalline layer via implantation of a doping agent.
Claim 12
Dependent Claim
23 words
A method as claimed in claim 1, further comprising the step of: doping said amorphous silicon layer in-situ during said step of depositing.
Claim 13
Dependent Claim
40 words
A method as claimed in claim 9, further comprising the step of: activating said doping agent by heating to a high temperature after said transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.
Claim 14
Dependent Claim
39 words
A method as claimed in claim 10, further comprising the step of: activating said doping agent by heating to a high temperature after transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.
Claim 15
Dependent Claim
39 words
A method as claimed in claim 11, further comprising the step of: activating said doping agent by heating to a high temperature after transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.
Claim 16
Dependent Claim
20 words
A method as claimed in claim 1, wherein said polysilicon layer is a polysilicon resistance layer on an integrated circuit.
Claim 17
Independent Claim
146 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of no more than 10° C. change in temperature per minute from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 18
Independent Claim
146 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of no more than 10° C. change in temperature per minute from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 19
Dependent Claim
19 words
A method according to claim 16, further comprising the step of tempering said substrate substantially at said target temperature.
Claim 20
Dependent Claim
18 words
A method according to claim 17, wherein said step of tempering is conducted for at least 15 minutes.
Claim 21
Dependent Claim
49 words
A method according to claim 16, wherein said step of depositing of said amorphous silicon layer utilizes a chemical vapor deposition process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.
Claim 22
Dependent Claim
19 words
A method according to claim 10, wherein said step of depositing of said amorphous silicon layer is by sputtering.
Claim 23
Dependent Claim
21 words
A method according to claim 16, wherein said target temperature is in a range of approximately 700° C. to 800° C.
Claim 24
Independent Claim
142 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then rapidly heating said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of at least 100° C. per second from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 25
Independent Claim
142 words
A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then rapidly heating said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of at least 100° C. per second from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.
Claim 26
Dependent Claim
19 words
A method according to claim 22, further comprising the step of tempering said substrate substantially at said target temperature.
Claim 27
Dependent Claim
18 words
A method according to claim 23, wherein said step of tempering is conducted for at least 15 minutes.
Claim 28
Dependent Claim
49 words
A method according to claim 21, wherein said step of depositing of said amorphous silicon layer utilizes a chemical vapor deposition process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.
Claim 29
Dependent Claim
19 words
A method according to claim 22, wherein said step of depositing of said amorphous silicon layer is by sputtering.
Claim 30
Dependent Claim
21 words
A method according to claim 22, wherein said target temperature is in a range of approximately 700° C. to 800° C.
References Cited (Backward Citations)
DE2430859A1
Cited
US4148931A
Cited
US4177474A
Cited
US4179528A
Cited
US4151058A
Cited
US4322452A
Cited
US4217374A
Cited
US4213781A
Cited
US4494136A
Cited
US4441973A
Cited
US4357179A
Cited
US4417092A
Cited
JPS57166027A
Cited
US4529617A
Cited
US4508609A
Cited
JPS60246283A
Cited
JPS6126780A
Cited
US4597989A
Cited
US4789560A
Cited
US4963506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |