US5213670A — Method for manufacturing a polycrystalline layer …

Claim 1

Independent Claim 166 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; and then controlling the phase transformation of the amorphous silicon into a polycrystalline layer by the steps of: heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystalline temperature for the amorphous silicon, holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature, and then, after reaching the thermal equilibrium, continuing the heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate through a reproducible prescribed temperature profile from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 2

Independent Claim 166 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; and then controlling the phase transformation of the amorphous silicon into a polycrystalline layer by the steps of: heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystalline temperature for the amorphous silicon, holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature, and then, after reaching the thermal equilibrium, continuing the heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate through a reproducible prescribed temperature profile from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 3

Dependent Claim 20 words

A method as claimed in claim 1, further comprising the step of: tempering said substrate substantially at said target temperature.

Claim 4

Dependent Claim 26 words

A method as claimed in claim 2, wherein said step of tempering said substrate substantially at said target temperature is conducted for at least 15 minutes.

Claim 5

Dependent Claim 51 words

A method as claimed in claim 1, wherein said step of depositing of said amorphous silicon layer utilizes a CVD (chemical vapor deposition) process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.

Claim 6

Dependent Claim 20 words

A method as claimed in claim 1, wherein said step of depositing of said amorphous silicon layer is by sputtering.

Claim 7

Dependent Claim 22 words

A method as claimed in claim 1, wherein said target temperature is in a range of approximately 700° C. to 800° C.

Claim 8

Dependent Claim 39 words

A method as claimed in claim 1, wherein said step of controlled heating from said initial temperature to said target temperature is carried out with a controlled rate of no more than 10° C. change in temperature per minute.

Claim 9

Dependent Claim 39 words

A method as claimed in claim 1, wherein said step of controlled heating from said initial temperature to said target temperature is carried out by rapid thermal annealing using a controlled rate of at least 100° C. per second.

Claim 10

Dependent Claim 28 words

A method as claimed in claim 1, further comprising the step of: doping said amorphous silicon layers via implantation of a doping agent after said step of depositing.

Claim 11

Dependent Claim 22 words

A method as claimed in claim 1, further comprising the step of: doping said polycrystalline layer via implantation of a doping agent.

Claim 12

Dependent Claim 23 words

A method as claimed in claim 1, further comprising the step of: doping said amorphous silicon layer in-situ during said step of depositing.

Claim 13

Dependent Claim 40 words

A method as claimed in claim 9, further comprising the step of: activating said doping agent by heating to a high temperature after said transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.

Claim 14

Dependent Claim 39 words

A method as claimed in claim 10, further comprising the step of: activating said doping agent by heating to a high temperature after transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.

Claim 15

Dependent Claim 39 words

A method as claimed in claim 11, further comprising the step of: activating said doping agent by heating to a high temperature after transformation of said amorphous silicon layer into said polycrystalline layer in said step of controlled heating.

Claim 16

Dependent Claim 20 words

A method as claimed in claim 1, wherein said polysilicon layer is a polysilicon resistance layer on an integrated circuit.

Claim 17

Independent Claim 146 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of no more than 10° C. change in temperature per minute from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 18

Independent Claim 146 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then heating of said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of no more than 10° C. change in temperature per minute from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 19

Dependent Claim 19 words

A method according to claim 16, further comprising the step of tempering said substrate substantially at said target temperature.

Claim 20

Dependent Claim 18 words

A method according to claim 17, wherein said step of tempering is conducted for at least 15 minutes.

Claim 21

Dependent Claim 49 words

A method according to claim 16, wherein said step of depositing of said amorphous silicon layer utilizes a chemical vapor deposition process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.

Claim 22

Dependent Claim 19 words

A method according to claim 10, wherein said step of depositing of said amorphous silicon layer is by sputtering.

Claim 23

Dependent Claim 21 words

A method according to claim 16, wherein said target temperature is in a range of approximately 700° C. to 800° C.

Claim 24

Independent Claim 142 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then rapidly heating said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of at least 100° C. per second from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 25

Independent Claim 142 words

A method for the manufacture of a polycrystalline silicon layer on a substrate, comprising the steps of: depositing an amorphous silicon layer on a substrate; heating said substrate with said amorphous silicon layer to an initial temperature that is lower than a crystallization temperature for the amorphous silicon; holding the substrate with said amorphous silicon layer at the initial temperature to achieve a thermal equilibrium of the substrate with the amorphous silicon layer at said initial temperature; and then rapidly heating said substrate with said amorphous silicon layer to raise the temperature at a controlled rate of at least 100° C. per second from said initial temperature to a target temperature, said target temperature being higher than the crystallization temperature of said amorphous silicon so that said amorphous silicon crystallizes and becomes a polycrystalline layer having a defined grain size and texture.

Claim 26

Dependent Claim 19 words

A method according to claim 22, further comprising the step of tempering said substrate substantially at said target temperature.

Claim 27

Dependent Claim 18 words

A method according to claim 23, wherein said step of tempering is conducted for at least 15 minutes.

Claim 28

Dependent Claim 49 words

A method according to claim 21, wherein said step of depositing of said amorphous silicon layer utilizes a chemical vapor deposition process at a temperature range of approximately 560° C. to 600° C., and wherein said initial temperature is in a range of approximately 500° C. to 550° C.

Claim 29

Dependent Claim 19 words

A method according to claim 22, wherein said step of depositing of said amorphous silicon layer is by sputtering.

Claim 30

Dependent Claim 21 words

A method according to claim 22, wherein said target temperature is in a range of approximately 700° C. to 800° C.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-05-24	1996-11-23	1997-05-25	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-05-24	2000-11-23	2001-05-25	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-05-24	2004-11-23	2005-05-25	$7700.00	Window Closed / Lapsed

Method for manufacturing a polycrystalline layer on a substrate

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