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US5879977A
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Process for fabricating a thin film transistor semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-04-23
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Granted: 1999-03-09
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Expires: 2016-04-23
Abstract
Abstract A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20° to 150° C.
Inventors
- 👤 Hongyong Zhang
- 👤 Hideki Uochi
- 👤 Toru Takayama
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
94 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film without removing said catalyst; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal at least from a second portion of said semiconductor film, said second portion being distant from said first portion.
Claim 2
Dependent Claim
94 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film without removing said catalyst; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal at least from a second portion of said semiconductor film, said second portion being distant from said first portion.
Claim 3
Dependent Claim
28 words
The process of claim 1 wherein said annealing step is performed at a temperature 20°-150° C. lower than the crystallization temperature of an amorphous silicon without said catalyst.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein said annealing step is carried out at a temperature of 450° to 650° C.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein said catalyst is formed on a silicon oxide film formed on said substrate with said substrate being heated at a temperature of 100° to 500° C.
Claim 6
Dependent Claim
29 words
The process of claim 1 wherein said substrate comprises glass, and said annealing step is performed at a temperature not higher than a glass transition temperature of said substrate.
Claim 7
Dependent Claim
19 words
A method according to claim 1 wherein said metal containing catalyst is disposed on or under said semiconductor film.
Claim 8
Dependent Claim
22 words
A method according to claim 1 wherein said metal is selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 9
Dependent Claim
20 words
A method according to claim 1 wherein said semiconductor film is in an amorphous state before performing said annealing step.
Claim 10
Dependent Claim
99 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates.
Claim 11
Dependent Claim
99 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates.
Claim 12
Dependent Claim
28 words
The process of claim 9 wherein said annealing step is performed at a temperature 20°-150° C. lower than the crystallization temperature of an amorphous silicon without said catalyst.
Claim 13
Dependent Claim
20 words
The process of claim 9 wherein said annealing step is carried out at a temperature of 450° to 650° C.
Claim 14
Dependent Claim
19 words
A method according to claim 9 wherein said metal containing catalyst is disposed on or under said semiconductor film.
Claim 15
Dependent Claim
22 words
A method according to claim 9 wherein said metal is selected from the group consisting of nickel, iron, cobalt, platinum and palladium.
Claim 16
Dependent Claim
20 words
A method according to claim 9 wherein said semiconductor film is in an amorphous state before performing said annealing step.
Claim 17
Dependent Claim
35 words
The process of claims 1 or 9 wherein said semiconductor film comprises at least one channel region of an insulated gate field effect transistor and said catalyst is formed on at least said channel region.
Claim 18
Dependent Claim
152 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates. wherein said metal containing catalyst disposing step is carried out by coating the semiconductor film in a substantially amorphous state with a solvent containing a salt of at least one material selected from the group consisting of nickel, iron, cobalt, platinum and palladium, and wherein said solvent further contains a surface active agent.
Claim 19
Dependent Claim
152 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film; and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates. wherein said metal containing catalyst disposing step is carried out by coating the semiconductor film in a substantially amorphous state with a solvent containing a salt of at least one material selected from the group consisting of nickel, iron, cobalt, platinum and palladium, and wherein said solvent further contains a surface active agent.
Claim 20
Dependent Claim
121 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; preparing a solution by dispersing a metal containing catalyst into a solvent; applying said solution in contact with a first portion of said semiconductor film; drying said solution, annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates, wherein said solvent further contains a surface active agent.
Claim 21
Dependent Claim
121 words
A process for fabricating a semiconductor comprising: forming a semiconductor film comprising silicon on an insulating surface of a substrate; preparing a solution by dispersing a metal containing catalyst into a solvent; applying said solution in contact with a first portion of said semiconductor film; drying said solution, annealing said semiconductor film to crystallize said semiconductor film wherein the crystallization proceeds with diffusion of said metal through said semiconductor film and then treating a surface of said semiconductor film with an etchant selected from the group consisting of hydrofluoric acid and hydrochloric acid to remove said metal from at least a second portion of said semiconductor film at which said crystallization terminates, wherein said solvent further contains a surface active agent.
Claim 22
Dependent Claim
20 words
The process of claim 17 wherein said annealing step is carried out at a temperature of 450° to 650° C.
Claim 23
Dependent Claim
29 words
The process of claim 17 wherein said substrate comprises glass, and said annealing step is performed at a temperature not higher than a glass transition temperature of said substrate.
Claim 24
Dependent Claim
33 words
The process of claim 17 wherein said semiconductor film comprises at least one channel region of an insulated gate field effect transistor and said solvent is coated on at least said channel region.
Claim 25
Dependent Claim
18 words
The process of any one of claims 1, 9, 16, or 17, wherein said semiconductor film is amorphous.
Claim 26
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface of a substrate, said semiconductor film including a region to become an active region of said semiconductor device: disposing a catalyst substance in contact with a first portion of said semiconductor film, said catalyst capable of promoting a crystallization of said semiconductor film; annealing said semiconductor film without removing said catalyst substance to crystallize at least said region of the semiconductor film to become the active region; and etching said catalyst substance from an upper surface of said semiconductor film such that said semiconductor film is substantially not affected by the etching step.
Claim 27
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface of a substrate, said semiconductor film including a region to become an active region of said semiconductor device: disposing a catalyst substance in contact with a first portion of said semiconductor film, said catalyst capable of promoting a crystallization of said semiconductor film; annealing said semiconductor film without removing said catalyst substance to crystallize at least said region of the semiconductor film to become the active region; and etching said catalyst substance from an upper surface of said semiconductor film such that said semiconductor film is substantially not affected by the etching step.
Claim 28
Dependent Claim
13 words
The method of claim 22 wherein annealing is performed by a heat treatment.
Claim 29
Dependent Claim
19 words
The method of claim 22 wherein in an excess amount of said catalyst substance is removed by said etching.
Claim 30
Dependent Claim
37 words
The method of claim 22 wherein said catalyst substance is added into said semiconductor film at a concentration ib the range of 1×10 15 atoms/cm 3 to 1 atomic % as measured by secondary ion mass spectrometer.
Claim 31
Dependent Claim
23 words
The method of claim 22 wherein said catalyst substance includes a metal selected from the group consisting of Pt, Fe, Co, and Pd.
Claim 32
Dependent Claim
21 words
The method of claim 22 wherein said catalyst substance is provided in contact with a lower surface of said semiconductor film.
Claim 33
Dependent Claim
21 words
The method of claim 22 wherein said catalyst substance is provided in contact with an upper surface of said semiconductor film.
Claim 34
Dependent Claim
37 words
The method of claim 22 wherein said selected portion of the semiconductor film comprises at least one channel region of an insulated gate field effect transistor and said catalyst is disposed on at least said selected portion.
Claim 35
Independent Claim
103 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface of a substrate, said semiconductor film including a region to become an active region of said semiconductor device; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; heating said semiconductor film to crystallize at least said region of the semiconductor film wherein the crystallization proceeds with the diffusion of said metal through said semiconductor film; and selectively etching at least a second portion of the semiconductor film, said second portion being distant from said first portion.
Claim 36
Independent Claim
103 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface of a substrate, said semiconductor film including a region to become an active region of said semiconductor device; disposing a metal containing catalyst in contact with a first portion of said semiconductor film; heating said semiconductor film to crystallize at least said region of the semiconductor film wherein the crystallization proceeds with the diffusion of said metal through said semiconductor film; and selectively etching at least a second portion of the semiconductor film, said second portion being distant from said first portion.
Claim 37
Dependent Claim
16 words
A method according to claim 30 wherein said etching is performed by using a liquid etchant.
Claim 38
Dependent Claim
21 words
A method according to claim 31 wherein said etchant is selected from the group consisting of hydrochloric acid and hydrofluoric acid.
References Cited (Backward Citations)
US3919765A
Cited
US4046608A
Cited
US4215156A
Cited
US4231809A
Cited
US4331485A
Cited
US4379020A
Cited
US4383883A
Cited
US4561171A
Cited
US4481121A
Cited
US4954855A
Cited
US5169680A
Cited
US4758533A
Cited
JPH01187875A
Cited
JPH01187874A
Cited
US5407867A
Cited
JPH02140915A
Cited
US5531182A
Cited
JPH02275641A
Cited
US5278093A
Cited
JPH03280418A
Cited
JPH03280420A
Cited
US5162241A
Cited
US5147826A
Cited
US5560804A
Cited
US5580824A
Cited
US5244819A
Cited
US5272119A
Cited
US5563426A
Cited
US5403772A
Cited
US5604360A
Cited
US5696386A
Cited
US5639698A
Cited
US5608232A
Cited
US5275851A
Cited
US5426064A
Cited
US5646424A
Cited
US5677549A
Cited
US5569936A
Cited
US5569610A
Cited
US5580792A
Cited
US5614733A
Cited
US5624851A
Cited
US5595944A
Cited
US5595923A
Cited
US5589694A
Cited
US5501989A
Cited
US5488000A
Cited
US5663077A
Cited
US5529937A
Cited
US5492843A
Cited
US5614426A
Cited
US5696388A
Cited
US5637515A
Cited
US5508533A
Cited
US5534716A
Cited
US5616506A
Cited
US5643826A
Cited
US5612250A
Cited
US5543352A
Cited
US5585291A
Cited
US5654203A
Cited
US5705829A
Cited
US5605846A
Cited
US5656825A
Cited
US5620910A
Cited
US5731613A
Cited
US5712191A
Cited
US5621224A
Cited
US5606179A
Cited
US5756364A
Cited
US5700333A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |