Manufacture of semiconductor film

Abstract

Abstract PURPOSE:To make it possible to form a single crystal film of superior quality by a method wherein, in a method of single crystallization of a polycrystalline or amorphous semiconductor film formed on an insulator, a single crystal part is obtained by locally heating the semiconductor film, the region other than the single crystal part is removed, then a semiconductor film is formed again, and then it is single-crystallized by subjecting to a heat treatment. CONSTITUTION:In the first place, a polycrystalline or amorphous semiconductor film 201, having thickness t1, is formed on an insulator 101. Then, the film 201 is locally heated, and a single crystal part 301 is formed. The above- mentioned local heating is conducted using a heater, a laser beam, an electron beam, heat rays and the like, and any method can be used if the single crystallization is accomplished. Only a part of the single crystal part 301 is left, and other part is removed. Then, a semiconductor film 202 is formed again, and at this time, the film thickness t2 should be finally matched with the necessary film thickness. Then, a single crystal part 302 is formed by heat-treating the above-mentioned film, and finally, the unnecessary part is removed, and a single crystal semiconductor film is obtained.

Inventors

• 👤 Masaki Ashizawa
• 👤 芦沢　雅貴

Bibliographic Details